ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Field ion-scanning tunneling microscopy has been used to study 6H–SiC(0001) surfaces with Si adlayers on the Si-terminated surface, formed by in situ Si molecular beam etching at 950 °C. The as-cleaned surface showed a ((square root of 3)×(square root of 3)) reconstruction. The (2×3), (2(square root of 3)×6(square root of)6), and (3×3) phases were formed by evaporating Si on this clean 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface. A Si(111) film 6 monolayers thick was also epitaxially grown on the 6H–SiC(0001)-((square root of 3)×(square root of 3)) surface at 800 °C, and the surface exhibited the Si(111)–(7×7) reconstruction. A surface vacancy model for the ((square root of 3)×(square root of 3)) reconstruction is proposed, and a possible application of utilizing the various surface reconstructions to control the growth of different polytypes of SiC on the 6H–SiC substrate is discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363037
