Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 3608-3610
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Based on the capacitance–voltage (CV) characteristics of semiconductor metal-insulator- semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361378
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