Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 7920-7930
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The principle of superposition forms the theoretical basis on which the comparison of illuminated and dark current-voltage (I-V) characteristics of solar cells depends. Two cases predicted from computer simulations where the superposition principle does not apply in silicon p-n junction solar cells are reported. These predictions are confirmed experimentally with measurements taken on existing high-efficiency devices, and cannot be accurately described by previous explanations for departures from this principle. The first case, which is the more important in terms of operation under 1 sun illumination, occurs in cells where recombination via defect levels (Shockley–Read–Hall recombination) with unequal electron and hole capture rates dominates the I-V characteristics. The second case is evident at small forward voltages in almost all silicon solar cells. It is shown that the former is due to a saturation in the recombination rate, while the latter is the result of a bias-dependent modification of the carrier concentrations across the p-n junction depletion region which is different under illumination from that in the dark. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357902
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