Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 1629-1635
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354812
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