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Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)

Shaw, G. J. ; Messenger, S. R. ; Walters, R. J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 7244-7249

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354012

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