Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 3229-3232
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341541
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