ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper we present a study of the formation of TiN thin films during the IBADprocess. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incidentangle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiNlayers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneouslybombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressureof Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 -1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to athickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy wasvaried from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples wereanalyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profilesof titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectrawere analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD)for phase identification. The resistivity of samples was measured with four-point probe method. Theresults clearly show that TiN thin layer grows with (111) and (200) preferred orientation, dependingon the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolledcrystalline orientation occurs. Also, it was found that the variations in TiN film resistivitycould be mainly attributed to the ion beam induced damage during the IBAD process
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.155.pdf
