Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 35-40 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We present a study of the micro-structural changes induced in Cr-N layers by irradiationwith argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to athickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures.The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2.Structural characterization was performed with Rutherford backscattering spectroscopy, x-raydiffraction analysis and transmission electron microscopy, and we also did electrical resistivitymeasurements on the samples. It has been found that the layers grow in the form of a polycrystallinecolumnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N orCrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induceslocal micro-structural changes, formation of nano-particles and defects, though the structures retaintheir polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivityafter ion irradiation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.35.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Properties of TiN Coatings Deposited on Nitrogen Ion Implanted Steel C1045 (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 59-64 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the propertiesof deposited TiN coatings were investigated. Nitrogen ion implantations were performed at 40 keV,to the fluences from 5x1016 – 5x1017 ions/cm2. On so prepared substrates we deposited 1.3 μm thickTiN layers by reactive sputtering. Structural characterizations of the samples were performed bygrazing incidence X-ray diffraction analysis (GXRD), standard X-ray diffraction analysis (XRD),and scanning electron microscopy (SEM). Microhardness was measured by Vicker’s method. Theobtained results indicate the formation of iron-nitrides in the near surface region of the substrates,more pronounced for higher implanted fluences. The structure of the deposited TiN coatings showsa strong dependence on the pre-implantation of the substrates, which is attributed to the changedlocal structure at the surface. Ion implantation and deposition of hard TiN coatings induce anincrease of the microhardness of this low performance steel of more than eight times
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.59.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Analysis of SiO〈sub〉2〈/sub〉 Thin Film Deposited by Reactive Sputtering (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 518 (July 2006), p. 149-154 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from ahigh purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure duringion gun operation was 1·10-3mbar. Structural characterization of the films was performed byRutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-raydiffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient forthe deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on thetarget of 5.5mA
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.149.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 518 (July 2006), p. 155-160 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper we present a study of the formation of TiN thin films during the IBADprocess. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incidentangle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiNlayers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneouslybombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressureof Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 -1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to athickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy wasvaried from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples wereanalyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profilesof titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectrawere analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD)for phase identification. The resistivity of samples was measured with four-point probe method. Theresults clearly show that TiN thin layer grows with (111) and (200) preferred orientation, dependingon the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolledcrystalline orientation occurs. Also, it was found that the variations in TiN film resistivitycould be mainly attributed to the ion beam induced damage during the IBAD process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.155.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...