ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We present a study of the micro-structural changes induced in Cr-N layers by irradiationwith argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to athickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures.The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2.Structural characterization was performed with Rutherford backscattering spectroscopy, x-raydiffraction analysis and transmission electron microscopy, and we also did electrical resistivitymeasurements on the samples. It has been found that the layers grow in the form of a polycrystallinecolumnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N orCrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induceslocal micro-structural changes, formation of nano-particles and defects, though the structures retaintheir polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivityafter ion irradiation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.35.pdf
