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  • 1
    Electronic Resource
    Electronic Resource
    Stress State Effect on Dynamic Strain Aging and Surface Markings During Stretching of AlMg7 Alloy Sheet (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 282-283 (May 1998), p. 309-314 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.282-283.309.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Bestimmung der Betriebsphasenimpedanzen in einem Dreiphasenleitersystem mit verzweigten Leitern (1972)
    Springer
    Electrical engineering 54 (1972), S. 361-366 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Contents In this article the analytical method and the numerical calculation are shown of the phase currents, of the phase tensions and of the phase impedances in a threephase conductor system without zero conductor and with branched conductors. The energy balance is set up and the energy losses in the conductor system are calculated.
    Notes: Übersicht In dieser Abhandlung werden der analytische Weg und die zahlenmäßige Berechnung der Phasenströme, Phasenspannungen und Phasenimpedanzen im Dreiphasenleitersystem ohne Nulleiter mit großen Strömen gezeigt, in dem jede Phase aus mehreren elektrisch parallel geschalteten Leitern besteht. Die Energiebilanz wird aufgestellt und die Energieverluste des Leitersystems werden berechnet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01575937
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  • 3
    Electronic Resource
    Electronic Resource
    Die Betriebsphasenimpedanzen eines dreiphasigen Leitersystems als Folge des Leistungsaustausches zwischen den Phasen (1972)
    Springer
    Electrical engineering 54 (1972), S. 301-306 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Contents This is the first of two articles which deal with the determination of the electromagnetic properties of three-phase conducting systems with high currents. The authors show analytically trough a simple example, each phase having only one conductor, the determination of the phase currents and tensions, the phase impedances, the loss energy and the asymmetrics of a conducting system without zero conductor. There is especially emphasized the dependency of the phase impedances from the load and the explanation of the physical conditions in such a conducting system.
    Notes: Übersicht Dies ist die erste von zwei Abhandlungen, welche sich mit der Ermittlung der elektromagnetischen Eigenschaften von Dreiphasenleitersystemen mit hohen Strömen befassen. Die Verfasser zeigen analytisch an einem einfachen Beispiel, bei welchem jede Phase nur einen Leiter hat, wie die Phasenströme und-Spannungen, die Phasenimpedanzen, die Verlustleistungen und die Unsymmetrien des Leitersystems ohne Nulleiter bestimmt werden. Besonderer Wert wird auf die Abhängigkeit der Phasenimpedanzen von der Last und auf die Erklärung der phyksialischen Verhältnisse in einem solchen Leitersystem gelegt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01574506
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen solubilities in fermentation fluids (1979)
    Springer
    Applied microbiology and biotechnology 8 (1979), S. 1-15 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Summary Fermentation media consist of a large number of chemicals whose composition undergoes alteration during the course of fermentation. As a result of this, conventional methods and correlations for oxygen solubility measurement and prediction do not apply in these systems. Using a physical method, oxygen solubilities were measured in simulated chemical systems and in fermentation broths. Sugars, salts, and fermentation products were identified as major factors influencing oxygen solubility. Salt effect was correlated with electrical conductivity of the medium, which was easy to measure during fermentation. For mixtures and for fermentation medium, individual influences were found to be log-additive in accordance with Danckwerts (1970).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00510261
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  • 5
    Electronic Resource
    Electronic Resource
    Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 35-40 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We present a study of the micro-structural changes induced in Cr-N layers by irradiationwith argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to athickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures.The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2.Structural characterization was performed with Rutherford backscattering spectroscopy, x-raydiffraction analysis and transmission electron microscopy, and we also did electrical resistivitymeasurements on the samples. It has been found that the layers grow in the form of a polycrystallinecolumnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N orCrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induceslocal micro-structural changes, formation of nano-particles and defects, though the structures retaintheir polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivityafter ion irradiation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.35.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Properties of TiN Coatings Deposited on Nitrogen Ion Implanted Steel C1045 (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 555 (Sept. 2007), p. 59-64 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the propertiesof deposited TiN coatings were investigated. Nitrogen ion implantations were performed at 40 keV,to the fluences from 5x1016 – 5x1017 ions/cm2. On so prepared substrates we deposited 1.3 μm thickTiN layers by reactive sputtering. Structural characterizations of the samples were performed bygrazing incidence X-ray diffraction analysis (GXRD), standard X-ray diffraction analysis (XRD),and scanning electron microscopy (SEM). Microhardness was measured by Vicker’s method. Theobtained results indicate the formation of iron-nitrides in the near surface region of the substrates,more pronounced for higher implanted fluences. The structure of the deposited TiN coatings showsa strong dependence on the pre-implantation of the substrates, which is attributed to the changedlocal structure at the surface. Ion implantation and deposition of hard TiN coatings induce anincrease of the microhardness of this low performance steel of more than eight times
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.59.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 518 (July 2006), p. 155-160 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper we present a study of the formation of TiN thin films during the IBADprocess. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incidentangle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiNlayers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneouslybombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressureof Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 -1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to athickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy wasvaried from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples wereanalyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profilesof titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectrawere analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD)for phase identification. The resistivity of samples was measured with four-point probe method. Theresults clearly show that TiN thin layer grows with (111) and (200) preferred orientation, dependingon the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolledcrystalline orientation occurs. Also, it was found that the variations in TiN film resistivitycould be mainly attributed to the ion beam induced damage during the IBAD process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.155.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Occurrence in Egg Yolk of Plasmalogenic Triglycerides (1963)
    [s.l.] : Nature Publishing Group
    Nature 199 (1963), S. 1285-1286 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The present report describes the isolation from egg yolk of a plasmalogenic triglyceride to which the tentative structure I could be assigned: CH2O-CH = CH(CH2)15CH3 CHOCOR! (or E2) (I) CH2OCO#2 (or RI) ^?1 = CH3(CH2)i4 J?2 = CH3(CH2)16 In two different runs, dry hen eggs and fresh egg yolks ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1991285b0
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  • 9
    Electronic Resource
    Electronic Resource
    The cerebrosides of bovine heart muscle
    Amsterdam : Elsevier
    Chemistry and Physics of Lipids 4 (1970), S. 257-260 
    Details
    ISSN: 0009-3084
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-3084(70)90027-7
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  • 10
    Electronic Resource
    Electronic Resource
    The role of the New Habitat Centre
    Amsterdam : Elsevier
    Habitat International 3 (1978), S. 215-219 
    Details
    ISSN: 0197-3975
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geography , Sociology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0197-3975(78)90063-2
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