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  • Artikel: DFG Deutsche Nationallizenzen  (27)
  • 2000-2004  (11)
  • 1985-1989  (16)
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  • Artikel: DFG Deutsche Nationallizenzen  (27)
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  • 1
    Digitale Medien
    Digitale Medien
    Localized epitaxial growth of MoSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1518-1524 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336458
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  • 2
    Digitale Medien
    Digitale Medien
    Localized epitaxial growth of WSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3481-3488 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336818
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  • 3
    Digitale Medien
    Digitale Medien
    Spin-reorientation transition in magnetic alloy films CoxNi1−x/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: With better than 1% control of alloy composition, binary alloy films CoxNi1−x/Cu(100) with x≤10% were prepared for the study of the spin-reorientation transition at variations of composition, thickness, and temperature. Only the films with a Co concentration less than 10% reveal the spin-reorientation with the film thickness. The critical thickness for the spin-reorientation transition was shifted drastically from 7.5 to 17.5 monolayers for a Co concentration variation from 0% to 8%. These findings indicate a strong influence of the composition on the magnetoelastic anisotropy. A kind of temperature-driven spin-reorientation from in-plane to perpendicular with increasing temperature was also found. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1354586
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of growth temperature on Curie temperature of magnetic ultrathin films Co/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1358827
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  • 5
    Digitale Medien
    Digitale Medien
    Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1515-1518 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Both epitaxial tetragonal and hexagonal WSi2 (t-WSi2 and h-WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two-step annealed samples. The orientation relationships between t-WSi2 and Si are [110]WSi2(parallel)[111]Si and (004)WSi2(parallel)(2¯02), whereas those between h-WSi2 and Si are [0001]WSi2(parallel)[111]Si and (202¯0)WSi2(parallel)(202¯)Si. Interfacial dislocations, 80 A(ring) in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336308
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  • 6
    Digitale Medien
    Digitale Medien
    High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1725-1729 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs (001) substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A (1×2) reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs (2×4) surface. A high p-type doping level of 1.5×1018 cm−3 was achieved for (N+Te) triple-delta doping (δ3 doping) of ZnBeSe epilayers, whereby three adjacent δ layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that (N+Te) δ3-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten≥3 clusters. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1384863
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  • 7
    Digitale Medien
    Digitale Medien
    Temperature dependence of interstitial oxygen diffusion in antimony-doped Czochralski silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2659-2660 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured directly the diffusivity of interstitial oxygen in Sb-doped Czochralski silicon in the temperature range 750–1150 °C. Using secondary-ion mass spectroscopy of outdiffusion profiles, we show that the diffusivity is the same as that for lightly B-doped crystals heated under identical conditions over the temperature range studied. We briefly discuss the implication of these results upon oxygen precipitation mechanisms in Sb-doped silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100186
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  • 8
    Digitale Medien
    Digitale Medien
    Femtosecond hot-carrier energy relaxation in GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98651
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  • 9
    Digitale Medien
    Digitale Medien
    Femtosecond dynamics of highly excited carriers in AlxGa1−xAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 161-163 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98908
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  • 10
    Digitale Medien
    Digitale Medien
    Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2819-2821 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor–acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I2) transition in undoped GaN increases with temperature as T1.5. However, the I2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1316075
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