Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Artikel: DFG Deutsche Nationallizenzen  (203)
  • 1990-1994  (203)
Datenquelle
  • Artikel: DFG Deutsche Nationallizenzen  (203)
Materialart
Erscheinungszeitraum
Jahr
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Structure-activity studies of a novel bicyclic oxytocin antagonist (1992)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 35 (1992), S. 1558-1563 
    Details
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jm00087a009
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Deposited silicon nitride with low electron trapping rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 381-386 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354121
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3852-3856 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2–5×1011 cm−2 and a typical mobility at 5 K of 2000 cm2 V−1 s−1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352895
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    The chemisorption and reaction of BCl3 with Si(111) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4907-4911 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The chemical mechanisms involved in the decomposition of boron trichloride and the concomitant incorporation of elemental boron into Si(111) were elucidated. The reaction between BCl3 and Si(111) is quit complex due to the presence of Si, B, and Cl in a number of chemically distinct environments simultaneously. Annealing the sample to 570 °C effectively desorbs all molecularly adsorbed BCl3. Additional anneals to 710 and 870 °C largely reduce the BCl2 and BCl3 moeities to form the subsurface-boron reconstructed surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352057
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    A mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2Cl2 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4544-4546 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The interaction between B2H6 and SiO2 was investigated by soft x-ray photoemission. Thermally activated, autocatalytic dissociative chemisorption of B2H6 on SiO2 to form elemental films was discovered at temperatures exceeding 550 °C. These surfaces are shown to be quite reactive towards SiH2Cl2. This process is thus a mechanism whereby the selectivity of chemical vapor deposition exhibited by SiH2Cl2 towards SiO2 can be rapidly degraded.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351384
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Calculated structures for [001] symmetrical tilt grain boundaries in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2048-2056 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structures of [001] tilt boundaries in silicon have been systematically investigated by computer modeling, using the harmonic Keating potential to describe the interatomic forces. The full angular range of symmetrical tilt boundaries can be described in terms of linear combinations of characteristic groupings of atoms. More than one stable relaxed structure has been found for most grain boundaries. In all cases the relaxed bicrystal consists of localized groups of pure edge or 45° dislocation cores embedded in a tetrahedrally coordinated, stable structure.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348730
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Raman scattering study of InAs/GaInSb strained layer superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5608-5614 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on [001] GaAs substrates with GaSb buffers, and directly on [001] GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350174
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Observation of gold evaporated on graphite (00.1) cleaved surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6520-6522 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Gold evaporated on air-cleaved (00.1) graphite was observed by scanning tunneling microscopy. Most individual gold islands were not stable during scanning; some islands even appeared to translate. These observations suggest that the interaction between the gold islands and the scanning tunneling microscope tip is stronger than that between the gold and the air-cleaved graphite substrate. Some gold islands were observed to be stable. It was deduced that stable islands at steps were located on the upper layer rather than on the lower layer. It is also deduced that the alignment of the elongated gold grains in the continuous film may be related to cleavage steps.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346856
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Rotational tunneling of methane on MgO surfaces: A neutron scattering study (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6997-7000 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: High-resolution inelastic neutron scattering was used to investigate the rotational tunneling of methane molecules in a (large-closed-square)×(large-closed-square)R45° commensurate, square-lattice–solid monolayer adsorbed on MgO (100) surfaces. Good matches to the observed transition energies were obtained using potential functions with C2v symmetry, suggesting that the preferred orientation of the molecule is the dipod-down configuration with two opposite edges of the H-atom tetrahedron parallel to the surface plane.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.461044
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Single-event, energy-resolved, Auger–electron, multiple-ion coincidence mass spectroscopy (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 9200-9202 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: An experimental method is described that is directed at monitoring the creation and decay of core hole states in molecules from state-to-state. Data in the form of a coincidence map are presented and analyzed for the case of nitrous oxide.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.459212
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...