ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have succeeded to fabricate SiC buried gate static induction transistors (BGSITs) withthe breakdown voltage VBR of 1270 V at the gate voltage VGS of –12 V and the specific on-resistanceRonS of 1.21 mΩ·cm2 at VGS = 2.5 V. The turn-off behaviors of BGSITs strongly depend on the sourcelength WS, which is the distance between the gate electrodes. The rise time tr of BGSIT for WS = 1,070μm is 395 nsec, while that for WS = 210 μm is 70nsec. From the 3D computer simulations, weconfirmed that the difference in turn-off behavior came from the time delay in potential barrierformation in channel region because of high p+ gate resistivity. The turn-off behaviors also depend onthe operation temperature, especially for long WS. On the other hand, the turn-on behaviors hardlydepend on the WS and temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1071.pdf
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