ZIB

1

Digitale Medien

Preparation of high-Tc superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition using second-generation fluorocarbon-based precursors (1991)

Zhang, J. M. ; Wessels, B. W. ; Richeson, D. S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 2743-2745

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: High-Tc superconducting Bi-Sr-Ca-Cu-O thin films with good electrical properties and smooth surface morphologies have been prepared by low-pressure organometallic chemical vapor deposition using the new fluorocarbon-based precursors Sr(hexafluoroacetylacetonate)2⋅tetraglyme and Ca(hexafluoroacetylacetonate)2⋅triglyme together with Cu(acetylacetonate)2 and triphenylbismuth [Bi(C6H5)3]. The fluorinated precursors are air-stable and exhibit high, stable volatility even after prolonged heating. X-ray diffraction measurements reveal that the films deposited at 650 °C contain some fluoride phases but no high-Tc phases. However, post-annealing in oxygen produces films composed predominantly of the Bi2Sr2CaCu2Ox phase with high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼100 K and zero resistivity achieved at 73 K.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.348631

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2

Digitale Medien

Pulsed organometallic beam epitaxy of complex oxide films (1991)

Duray, S. J. ; Buchholz, D. B. ; Song, S. N. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1503-1505

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.105301

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3

Digitale Medien

New hybrid physical vapor deposition/organometallic chemical vapor deposition route to high Tc superconducting Tl-Ba-Ca-Cu-O thin films (1989)

Richeson, D. S. ; Tonge, L. M. ; Wang, X. K. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 2778-2780

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: High Tc superconducting Tl-Ba-Ca-Cu-O thin films have been prepared by a novel hybrid technique that combines electron beam evaporation with organometallic chemical vapor deposition (OMCVD). Multilayer thin films of Ba-Ca-Cu-O are prepared by sequential evaporation of BaF2, CaF2, and Cu sources onto single-crystal MgO (100) or yttria-stabilized zirconia substrates followed by annealing in a water vapor-saturated oxygen atmosphere. Thallium is then incorporated in these films in either of two ways: (1) OMCVD using thallium(cyclopentadienide) as the source or (2) vapor diffusion using bulk Tl-Ba-Ca-Cu-O superconductor as the source. The resultant films are single phase, consisting predominantly of Tl1Ba2Ca2Cu3Ox with crystallite Cu-O planes preferentially oriented parallel to the substrate surface. Resistivity measurements indicate superconducting onset temperatures above 120 K with zero resistance by 104 K. By eliminating the water vapor in the initial anneal, fluoride (originating from the Ba and Ca sources) may be retained in the film. Upon T1 incorporation, this promotes formation of the Tl1Ba2Ca1Cu2Ox phase with preferential crystallite c-axis orientation perpendicular to the substrate surface.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.102372

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4

Digitale Medien

Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition (1992)

Wills, L. A. ; Wessels, B. W. ; Richeson, D. S. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 41-43

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low-pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800 °C yielded [100]-oriented BaTiO3 films. In-plane epitaxy was confirmed for the BaTiO3 films by x-ray diffraction.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.107359

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