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  • 11
    Electronic Resource
    Electronic Resource
    Raman scattering by folded longitudinal acoustic phonons in InAs/GaSb superlattices: Resonant enhancement and effect of interfacial bonding (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3498-3500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied backfolded longitudinal acoustic (LA) phonons in InAs/GaSb superlattices (SLs) intentionally grown with either InSb-like or GaAs-like interfaces (IFs). Raman scattering by folded LA phonons was found to be resonantly enhanced for incident photon energies slightly below the 2.0 eV electronic SL interband transition, observed previously by spectroscopic ellipsometry and by resonant Raman scattering from longitudinal optical SL phonons. Under resonant excitation, InAs/GaSb SLs with InSb-like IFs showed scattering by folded LA phonons up to the 7th order. For SLs with GaAs-like IFs, the folded LA phonon modes occurred at systematically higher frequencies than for SLs with the same nominal period and InSb-like IFs. The difference in frequency increased with decreasing SL period. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113776
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  • 12
    Electronic Resource
    Electronic Resource
    Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2060-2062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112793
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  • 13
    Electronic Resource
    Electronic Resource
    Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1293-1295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used resonant Raman scattering from both longitudinal-optical phonons and interface modes to study the chemical bonding across the InAs/AlSb interface in InAs/AlSb quantum wells grown by molecular-beam epitaxy. The effusion cell shutter sequence at the interfaces was selected for the deposition of either one monolayer of InSb or two to three monolayers of AlAs. In all cases an InSb-like interface mode is observed, indicating the preferential formation of In—Sb interface bonds irrespective of the shutter sequence. The deposition of two or three monolayers of AlAs at the InAs/AlSb interface results in the formation of pseudoternary AlSb1−xAsx barriers rather than binary AlAs interfaces and AlSb barriers, indicating a strong exchange among the group-V atoms. Normal (AlSb on InAs) and inverted (InAs on AlSb) InAs/AlSb interfaces have also been compared, revealing a much stronger InSb-like interface mode for the growth of AlSb on InAs than for the case of InAs grown on AlSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112098
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  • 14
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAs/AlSb single quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1665-1667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence study of InAs/AlSb single quantum well structures with a width varying between 20 and 5 nm is presented. Using Fourier-transform spectroscopy, the spatially indirect radiative recombination is observed. Excitation of the photoluminescence at 1.32 μm instead of excitation in the visible leads to broadening and blueshifting of the spectra. This behavior is explained by a photoinduced increase of the electron concentration. The optically induced blueshift of the low energy onset of the spectra is attributed to screening of an acceptor level in the AlSb barrier near the InAs/AlSb interface, located about 80 meV above the AlSb valence band maximum. The blueshift of the high energy of the luminescence spectra is limited to a transition energy of 420 meV, providing evidence for the existence of a deep level in the AlSb barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111824
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  • 15
    Electronic Resource
    Electronic Resource
    Study of composition and critical-point broadening in InAs/Ga1−xInxSb superlattices using spectroscopic ellipsometry (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1456-1458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy were studied by spectroscopic ellipsometry. The pseudodielectric function of InAs/GaSb SLs could be fitted using modified bulk dielectric functions of InAs and GaSb with pronounced energy shifts and broadening of critical-point resonances. These changes in the dielectric functions of the constituent layers can be explained only in part by pseudomorphic strains, therefore providing evidence for thin-layer critical-point broadening and quantum confinement effects. For InAs/(GaIn)Sb SLs, the extremum in the pseudodielectric function derived from the E1 critical point of (GaIn)Sb was found to shift to lower energies with increasing In content, and thus can be used as a probe for the composition of the (GaIn)Sb SL layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118560
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  • 16
    Electronic Resource
    Electronic Resource
    Magneto-optics of InAs/Ga1−xInxSb infrared superlattice diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3760-3762 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectrally resolved measurements of the responsivity of infrared photodiodes based on InAs/(GaIn)Sb superlattices (SL) were performed in applied magnetic fields. For the field oriented parallel to the growth axis, interband Landau transitions related to both the center and the edge of the SL Brillouin zone in the growth direction were observed, in accordance with the parity selection rules that are expected for the type II system under consideration. For the field oriented perpendicular to the growth axis, the interband Landau resonances are broadened and the widening of the band gap is smaller. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122886
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  • 17
    Electronic Resource
    Electronic Resource
    Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1581-1583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single- and triple-quantum-well (SQW and TQW), large optical cavity GaInAsSb/AlGaAsSb/GaSb laser diodes emitting at 2.26 μm are investigated. Internal loss coefficients as low as 5 and 7.7 cm−1 for the SQW and TQW, respectively, and relatively high internal quantum efficiencies of 65% (SQW) and 69% (TQW) were obtained. Extrapolated threshold current densities for infinite cavity lengths of 55 and 150 A/cm2 have been deduced for the SQW and TQW, respectively. These values scale very well with the number of QWs and are among the lowest reported for diode lasers in this wavelength range. A differential quantum efficiency as high as 50% and a total power efficiency of 23% were achieved at 280 K. The temperature dependence of the threshold current density revealed a high characteristic temperature of 110 K. Single-ended output powers of 240 mW in continuous-wave mode and exceeding 0.5 W in pulsed operation were obtained for a TQW laser with high-reflection/antireflection coated facets at 280 K, mounted substrate-side down. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308537
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  • 18
    Electronic Resource
    Electronic Resource
    Control of the residual doping of InAs/(GaIn)Sb infrared superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1659-1661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310167
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  • 19
    Electronic Resource
    Electronic Resource
    Reaction entropies of redox reactions of transition-metal complexes with sulfur donor ligands (1984)
    s.l. : American Chemical Society
    Inorganic chemistry 23 (1984), S. 3298-3303 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00189a006
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  • 20
    Electronic Resource
    Electronic Resource
    Diffusivity in 2-butoxyethanol/water mixtures of noncritical composition approaching the liquid/liquid coexistence curve (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 476-479 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Results of dynamic light scattering experiments are reported which demonstrate that the mutual diffusion coefficient of 2-butoxyethanol/water mixtures of noncritical composition exhibits a characteristic temperature and composition dependence: The diffusion coefficients of the two phases of noncritical composition coexisting along the liquid/liquid coexistence curve decrease by an order of magnitude in the temperature range (Tp−Tc)〈10 K approaching the lower critical point (Tp, temperature of phase separation; Tc, critical temperature). In the homogeneous 1-fluid phase region of the phase diagram, the D vs (T−Tp) curves of mixtures of noncritical composition are shifted to smaller values of D with decreasing values of ||y−yc|| (y, mass fraction of 2-butoxyethanol; yc, critical mass fraction). These findings are discussed on the basis of the model of regular mixtures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468158
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