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  • Electronic Resource  (3)
  • 1990-1994  (3)
  • 1990  (3)
Material
  • Electronic Resource  (3)
Years
  • 1990-1994  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 712-714 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-order optical susceptibilities (χ(3)) of poly{(7-oxo-7, 10H-benz[de]imidazo[4',5':5,6]benzimidazo [2,1-a]isoquinoline-3,4:10,11-tetrayl)-carbonyl}, referred to as BBL, and poly(6,9-dihydro-6,9-dioxobisbenzimidazo[2,1b:1',2'j] benzo[1mn]-[3,8]phenanthroline-3,12-diyl), known as BBB, have been determined using the technique of degenerate four-wave mixing (DFWM) at 1.064 μm. BBL has a χ(3)xxxx=(1.5±0.4)×10−11 esu, three times as large as that of BBB and 38 times as large as that of CS2. Electrochemical doping led to a small (〈30%) increase in the third-order susceptibility of BBL.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3711-3716 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. The I-V characteristics of Au on p-GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located at EV+0.84 eV was detected by deep-level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-0778
    Keywords: crosslinked albumin gelatin ; cytocompatibility ; endothelial cells ; fibroblastic cell
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Studies were carried out to compare the behaviour of human umbilical vein endothelial cells (HUVEC) and L-929 fibroblastic cells towards proteins crosslinked by glutaraldehyde (GTA) or carbodiimide (CDI) proposed for coating of vascular prostheses. CDI crosslinking of bovine serum albumin used alone, or mixed with gelatin, allowed higher rates of cell growth and DNA synthesis than GTA crosslinking independent of cells. Assessment of the plating efficiency revealed a similar behaviour of both cells towards membranes and reference plastic surface in terms of percentages of bound cells. HUVEC proliferation onto CDI crosslinked gelatin and/or albumin membranes did not differ significantly whereas the growth of L-929 was enhanced onto gelatin albumin membranes in comparison with both gelatin membranes and the reference surface. The analysis of DNA synthesis corroborated the results of the growth curves and elicited a delay of the growth phases in HUVEC cultured onto CDI crosslinked membranes, unlike the L-929 fibroblast.
    Type of Medium: Electronic Resource
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