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  • Electronic Resource  (74)
  • 1995-1999  (74)
  • 1998  (38)
  • 1997  (36)
  • 1
    Electronic Resource
    Electronic Resource
    Structure and dynamics of current sheets at Alfvén resonances in a differentially rotating plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2291-2296 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alfvén resonances, where the local flow speed relative to the boundary is equal to the local Alfvén speed, introduce novel dynamical features in a differentially rotating plasma. The spatial structure and dynamics of current sheets in such plasmas is investigated analytically as well as numerically. The current sheets at Alfvén resonances tend to power-law singularities. The growth of current sheets is algebraic in time in the linear regime and saturates in the presence of dissipation without the intervention of nonlinear effects. These results have significant implications for forced reconnection and Alfvén wave dissipation in laboratory and space plasmas. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872902
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetic Alfvén waves driven by velocity shear (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 836-840 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considering the effect of the finite ion gyroradius, the kinetic Alfvén wave in an anisotropic medium driven by a parallel velocity flow was investigated and the full dispersion relation was given. In deducing the dispersion relation, the coupling between electrostatic and electromagnetic oscillations, effects of the resonant electrons and the longitudinal motion of ions are considered. Based on the analytical and numerical calculations, two instability boundaries are found. They are 1〈(k⊥dV0/dx)/kzωci〈νA2/(Ti⊥/mi) and (k⊥dV0/dx)/kzωci〉νA2/(Ti/mi). Resonant electrons serve as the main energy source in these two regimes, while the ion longitudinal motion only suppresses the mode in the second regime. In the boundary layer of the magnetopause, the temperature anisotropy also modifies the instability by lowering the frequency and reducing the growth rate. The above results show that the low-frequency Alfvén waves with the scale of perpendicular wavelengths greater than the ion gyroradius in the magnetopause can be efficiently driven by a velocity-sheared flow. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872650
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  • 3
    Electronic Resource
    Electronic Resource
    A novel distributed system for plasma immersion ion implanter control and automation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1495-1498 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high voltage and electromagnetic field environment poses a big challenge to a control system for plasma immersion ion implantation (PIII). The automation process must be immune to electric field interference produced by the high voltage power supply, modulator, radio-frequency or microwave plasma generator, MEVVA plasma sources, and so on. We have recently designed and installed a distributed control system, PIIIDCS, to automate the operation of our PIII facility. Programmable logic controllers are used as the field control stations because of their good anti-interference ability and good real time response. A DH-485 network is used as the communication link between the field controllers and the management station in order to improve the robustness and reliability of the system. The newly developed interface is designed to work in a graphic mode in Microsoft Windows 95. Test runs have shown that the system is reliable, flexible, and easy to operate. The development of this novel control system will expedite the development of commercial PIII instrumentation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148785
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  • 4
    Electronic Resource
    Electronic Resource
    Textured diamond films growth on (100) silicon via electron-assisted hot filament chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1965-1967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Textured (100) diamond films are successfully grown on single-crystalline (100) silicon substrate by electron assisted hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The effects of various parameters have been studied. The optimal growth conditions are obtained and the oriental growth character is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118793
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  • 5
    Electronic Resource
    Electronic Resource
    Dose and energy uniformity over inner surface in plasma immersion ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1859-1862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absence of the line-of-sight restriction makes plasma immersion ion implantation an excellent interior surface treatment technique. In our experiments, we implanted both the outside and inside surfaces of a set of hollow cylindrical samples with and without a grounded conductive electrode positioned along the center of the bores to evaluate the impact energy as well as dose uniformity along the specimens. Our experimental results show that the use of the coaxial electrode increases the impact energy by 43% and retained dose by 71%. The nonuniformity is 20% to 30% and is worse with larger bore length. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368344
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  • 6
    Electronic Resource
    Electronic Resource
    Transport of plasmas produced by pulsed laser ablation of HgCdTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3509-3513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A time- and space-resolved diagnostic technique was used to investigate the emission spectra from the plasmas produced by pulsed laser-ablated HgCdTe targets at different pressures. According to the time-of-flight curves of the excited atoms, the propagation distances and velocities of species in the plasma were measured. To investigate the propagation of the plasma, a shock wave model considering ejected HgCdTe mass was established. The propagation distances and velocities of the plasmas were calculated by using the model. The calculated results were consistent with the experimental results. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366564
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of the sp3/sp2 ratio in tetrahedral amorphous carbon films by effective medium approximation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1281-1285 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, a method for the determination of the sp3/sp2 ratio for highly tetrahedral amorphous carbon (ta-C) films is presented. This method is an optical characterization according to the Bruggeman effective medium approximation based on simulation of the infrared reflection spectrum. The simulation reflectivity is in good agreement with the experimental spectrum, and the obtained results of sp3 content are in good agreement with electron energy loss spectroscopy data, suggesting that this is an effective method for obtaining the sp3/sp2 ratio of ta-C films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366826
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  • 8
    Electronic Resource
    Electronic Resource
    Colossal magnetoresistance in La1−xLixMnO3 : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7177-7179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La1−xLixMnO3 (x=0, 0.1, 0.2, and 0.3) were synthesized by using conventional solid state reaction and partial melting technique. The compounds were determined to be of rhombohedral structure by x-ray powder diffraction. For the x=0.2 and x=0.3 samples, room temperature neutron powder diffraction patterns were collected and analyzed with the Rietveld method. The analysis showed that the Li substitutes onto the La site in the rhombohedral perovskite lattice. Resistivities were measured between 4.2 K and room temperature in the magnetic fields of 0, 1, 2, 4, 8, and 13 T. A wide semiconductor-metal transition at temperatures between 160 and 210 K or between 200–230 K were observed for both samples with x=0.2 and 0.3, respectively. Large magnetoresistances above 20%–80% were achieved at fields from null to 13 T over a wide temperature range from the ferromagnetic transitions down to 4.2 K. However, the x=0 and 0.1 samples show a semiconducting behavior in resistivity measured between 77 and 300 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367793
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of recombination current on the current–voltage characteristics in metal–InGaAs Schottky diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1449-1453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current transport mechanisms were investigated on metal–InGaAs Schottky diodes in which the metal electrodes were deposited at both room temperature and low temperature. Based on fitting of the current–voltage (I–V) characteristics at different temperatures, it was found that the recombination current in the depletion region caused by the deep defect centers was responsible mainly for the deviations of I–V characteristics from the pure thermionic emission mechanism. This effect became more significant for diodes with lower barrier height, under smaller forward bias and at lower measuring temperature. However, the generation current only had subtle influence on the reverse bias characteristics. A deep defect level located at 0.321 eV below the bottom of the conduction band in the InGaAs material, which was identified by the deep level transient spectra measurements, may act as the recombination–generation deep center. The generation lifetime of this deep center may be much longer than its recombination lifetime, therefore it may more severely affect the forward biased I–V characteristics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368206
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  • 10
    Electronic Resource
    Electronic Resource
    Space-charge characteristics in polyethylene (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1546-1550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space-charge distributions in plate and coaxial cable samples of various polyethylene (PE) materials such as high density polyethylene, linear low density polyethylene, low density polyethylene, and cross-linking polyethylene under dc voltage are systematically investigated by the pulsed electro-acoustic method. The chemical structure and morphology of the sample materials are studied. The formation mechanism of space charge and the relations among space charge, chemical structure, and morphology are discussed. Our research results show that the distribution characteristics of space charge in various PE materials can be attributed to their chemical structure and morphology. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368221
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