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  • Electronic Resource  (271)
  • 2005-2009  (19)
  • 2000-2004  (77)
  • 1995-1999  (175)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7669-7671 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of superconductivity and flux pinning were carried out on (Bi1.64Pb0.36)Sr2Ca1−xYxCu2O8+y (x=0, 0.05, 0.11, 0.33) single crystals grown by the self-flux method. X-ray diffraction, transport, and magnetic measurements were performed for purposes of characterization. X-ray analysis revealed that the c lattice parameter systemically decreases as the Y doping level increases. The superconducting transition temperature Tc decreases from 80 to 30 K as x increases. A strong annealing effect on Tc and superconducting volume has been observed. Resistance measurements show that x=0.33 samples are semiconductive over a wide temperature range between 4.2 and 300 K for the as-grown state, but become metallic with Tc of 65–70 K after air or oxygen annealing. Flux pinning was studied by measuring the hysteresis loop at different temperatures and different fields. A peak effect was observed in all the codoped samples. Results show that at low temperatures, the peak field is smaller than in solely Pb doped crystals and decreases as x increases (x〉0.1). However, the peak field at high temperature for the x=0.05 sample is higher than in heavily Pb doped Bi2212 crystals, indicative of a strong pinning due to the codoping. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2291-2296 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alfvén resonances, where the local flow speed relative to the boundary is equal to the local Alfvén speed, introduce novel dynamical features in a differentially rotating plasma. The spatial structure and dynamics of current sheets in such plasmas is investigated analytically as well as numerically. The current sheets at Alfvén resonances tend to power-law singularities. The growth of current sheets is algebraic in time in the linear regime and saturates in the presence of dissipation without the intervention of nonlinear effects. These results have significant implications for forced reconnection and Alfvén wave dissipation in laboratory and space plasmas. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 836-840 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considering the effect of the finite ion gyroradius, the kinetic Alfvén wave in an anisotropic medium driven by a parallel velocity flow was investigated and the full dispersion relation was given. In deducing the dispersion relation, the coupling between electrostatic and electromagnetic oscillations, effects of the resonant electrons and the longitudinal motion of ions are considered. Based on the analytical and numerical calculations, two instability boundaries are found. They are 1〈(k⊥dV0/dx)/kzωci〈νA2/(Ti⊥/mi) and (k⊥dV0/dx)/kzωci〉νA2/(Ti/mi). Resonant electrons serve as the main energy source in these two regimes, while the ion longitudinal motion only suppresses the mode in the second regime. In the boundary layer of the magnetopause, the temperature anisotropy also modifies the instability by lowering the frequency and reducing the growth rate. The above results show that the low-frequency Alfvén waves with the scale of perpendicular wavelengths greater than the ion gyroradius in the magnetopause can be efficiently driven by a velocity-sheared flow. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5351-5356 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp−1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 621-623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated amorphous carbon films have been deposited in a plasma-enhanced chemical vapor deposition system, and the optical properties examined by Fourier transform infrared and ultraviolet-visible absorption spectroscopy. The infrared absorption spectra in the region from 1000 to 1800 cm−1 were resolved into ten peaks, which were assigned to various carbon–fluorine and carbon–carbon vibration modes. A relationship between the optical band gap and the aromatic carbon (sp2) concentration is demonstrated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2687-2690 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots (QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows the ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3918-3921 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron field emission from diamond-like carbon (DLC) films deposited on Si, Ti/Si, and Au/Si substrates by a filtered arc deposition technique was studied. As compared to DLC/Si and DLC/Au/Si, electron field emission from DLC/Ti/Si was enhanced, showing an increased emission current density and emission site density (∼1.2×103/cm2). An emission site density up to 2.2∼2.2×103/cm2 was obtained after the DLC/Ti/Si had been annealed at 430 °C for 0.5 h. A patterned DLC/Ti/Si array fabricated by the oxygen reactive ion beam etching technique showed further field emission enhancement. An emission site density up to 3.2∼3.5×103/cm2 and a threshold field as low as 2.1 V/μm were achieved. It was shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion beam etching were possible causes of the enhancing effects. It could also be explained by Geis' metal-diamond-vacuum triple junction emission mechanism. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1495-1498 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The high voltage and electromagnetic field environment poses a big challenge to a control system for plasma immersion ion implantation (PIII). The automation process must be immune to electric field interference produced by the high voltage power supply, modulator, radio-frequency or microwave plasma generator, MEVVA plasma sources, and so on. We have recently designed and installed a distributed control system, PIIIDCS, to automate the operation of our PIII facility. Programmable logic controllers are used as the field control stations because of their good anti-interference ability and good real time response. A DH-485 network is used as the communication link between the field controllers and the management station in order to improve the robustness and reliability of the system. The newly developed interface is designed to work in a graphic mode in Microsoft Windows 95. Test runs have shown that the system is reliable, flexible, and easy to operate. The development of this novel control system will expedite the development of commercial PIII instrumentation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A missteered beam safety monitor (MBSM) has been designed to protect the accelerator ring of the Advanced Photon Source against incursions of the missteered synchrotron radiation. When the orbit of the particle beam in the accelerator shifts out of its safety limits, the photon beam from the bending magnet will pass through the square apertures on the cooled mask of the MBSM and will heat up a very thin tungsten wire (0.025 mm in diameter) behind the mask. Acting as a resistance thermometer, the electrical resistance of the tungsten wire increases proportionally with temperature rise. As soon as the electrical resistance of the tungsten wire reaches a preset point, a signal is triggered immediately to dump the particle beam in the accelerator. The tungsten wire is inclined to the photon beam at 4.5 degrees in the vertical direction to prevent it from being overheated by the high power photon beam. Detailed mechanical design and thermal analysis are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 434-436 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Probe techniques employed in ohmic, rf, and H-mode Phaedrus-T tokamak plasmas are discussed. The floating potentials of nonemitting probes are found to be insensitive to plasma potential fluctuations at the rf frequency. Both Langmuir and emissive probes have been swept. The Langmuir probes were swept into electron saturation where a low-frequency oscillation was sometimes observed. Large probes (biased electrodes) have been used to perturb the plasma into an H mode. The biased electrode I-V characteristics differ from those of nonperturbing Langmuir probes and can be used to help identify the H mode. Probe behavior during the H mode is discussed. Two novel reciprocating probe designs have been developed. The faster of the two achieves average speeds of 5 m/s, which to our knowledge makes it the world's fastest. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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