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  • Electronic Resource  (26)
  • 1995-1999  (22)
  • 1970-1974  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanisms for microstructure evolution in electroplated copper thin films near room temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2516-2525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness, and compressive stress. The model is based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several microns, the model predicts a decreasing grain boundary contribution to electron scattering which allows the resistivity to decrease by tens of a percent to near-bulk values, as is observed. Concurrently, as the volume of the dilute grain boundary regions decreases, the stress is shown to change in the tensile direction by tens of a mega pascal, consistent with the measured values. The small as-deposited grain size is shown to be consistent with grain boundary pinning by a fine dispersion of particles or other pinning sites. In addition, room temperature diffusion of the pinning species along copper grain boundaries is shown to be adequate to allow the onset of abnormal grain growth after an initial incubation time, with a transient time inversely proportional to film thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371086
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced thermal stability of C49 TiSi2 in the presence of aluminum (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 312-314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The introduction of a thin layer of Al at the interface between Ti films and Si substrates enhances the formation of C49 TiSi2 and retards the transition from C49 to C54. An Al interlayer, 0.64 nm thick, reduces the time required to form C49 TiSi2 isothermally at 500 °C from 14 to 7 min. The C49–C54 transformation temperature is increased from 767 to 853 °C, when heating the samples at a constant ramp rate of 3 K/s. Most of the Al is found toward the interface between a Ti-rich silicide at the surface and TiSi2, rather than at the interface between TiSi2 and the Si substrate. The grain size of the C49 TiSi2 formed in the presence of Al is about five times smaller than that formed on a control sample with pure Ti, indicating that the increased density of grain boundaries in C49 TiSi2 in the presence of Al does not help the C49–C54 transformation. Therefore, the improved thermal stability of C49 TiSi2 is likely to be caused by other factors such as a reduced electron/atom ratio when replacing Si with Al in the disilicide. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121853
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  • 3
    Electronic Resource
    Electronic Resource
    Control of in-plane texture of body centered cubic metal thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4319-4326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong 〈110〉 fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the 〈110〉 fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90° rotation. In these two cases, there is a strong 〈110〉 fiber texture, but the in-plane 〈100〉 direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366239
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  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion and phase formation in Cu(Sn) alloy films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 90-99 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of Cu and Sn, and the formation and dissolution of Cu–Sn precipitates have been examined for Cu alloy films. Cu(Sn) films were deposited by electron beam evaporation either as Sn/Cu bilayers or Cu/Sn/Cu trilayers, with overall Sn concentrations from 0.1 to 5 at. %. In situ resistance, calorimetry, electron, and x-ray diffraction measurements indicate that η–Cu6Sn5 forms during film deposition. Upon heating, ε–Cu3Sn forms at 170 °C, then this phase dissolves into the Cu matrix at approximately 350 °C. Finally, ζ–Cu10Sn3 forms and precipitates after thermal cycling to 500 °C. The final resistivity of Cu/Sn/Cu films with more than 2 at. % Sn exceeds 3.5 μΩ cm. However, resistivities from 1.9 to 2.5 μΩ cm after annealing were reached in Cu/Sn/Cu films with less than 2 at. % Sn. Auger and Rutherford backscattering analysis of Cu/Sn bilayers (1 mm thick) showed that the homogenization of Sn in Cu requires annealing in excess of 350 °C for 30 min; after annealing, the Sn concentration at the surface is approximately 20 at. %. The interdiffusion of Sn and Cu is inhibited by contamination at the Sn/Cu interface caused by air exposure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366728
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  • 5
    Electronic Resource
    Electronic Resource
    Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3729-3731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the ion implantation of a small dose of Mo into a silicon substrate before the deposition of a thin film of Ti lowers the temperature required to form the commercially important low resistivity C54–TiSi2 phase by 100–150 °C. A lesser improvement is obtained with W implantation. In addition, a sharp reduction in the dependence of C54 formation on the geometrical size of the silicided structure is observed. The enhancement in C54 formation observed with the ion implantation of Mo is not explained by ion mixing of the Ti/Si interface or implant-induced damage. Rather, it is attributed to an enhanced nucleation of C54–TiSi2 out of the precursor high resistance C49–TiSi2 phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115364
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature formation of C54–TiSi2 using titanium alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3531-3533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the temperature at which the C49 TiSi2 phase transforms to the C54 TiSi2 phase can be lowered more than 100 °C by alloying Ti with small amounts of Mo, Ta, or Nb. Titanium alloy blanket films, containing from 1 to 20 at. % Mo, Ta, or Nb were deposited onto undoped polycrystalline Si substrates. The temperature at which the C49–C54 transformation occurs during annealing at constant ramp rate was determined by in situ sheet resistance and x-ray diffraction measurements. Tantalum and niobium additions reduce the transformation temperature without causing a large increase in resistivity of the resulting C54 TiSi2 phase, while Mo additions lead to a large increase in resistivity. Titanium tantalum alloys were also used to form C54 TiSi2 on isolated regions of arsenic doped Si(100) and polycrystalline Si having linewidths ranging from 0.13 to 0.56 μm. The C54 phase transformation temperature was lowered by over 100 °C for both the blanket and fine line samples. As the concentration of Mo, Ta, or Nb in the Ti alloys increase, or as the linewidth decreases, an additional diffraction peak appears in in situ x-ray diffraction which is consistent with increasing amounts of the higher resistivity C40 silicide phase. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120401
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2805-2807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the atomic-scale morphology and composition of the GaSb-on-InAs heterojunction with cross-sectional scanning tunneling microscopy, and find a new "white-noise" component in the wave-vector-dependent roughness spectrum under epitaxial growth conditions routinely employed for type-II quantum well and interband cascade lasers. This phenomenon is associated with random substitutional defects at the interface whose concentration exceeds that due to bulk cross incorporation. We propose these defects originate from the thermodynamically favored but incomplete replacement of As by Sb at the InAs surface during anion exchange. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122596
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  • 8
    Electronic Resource
    Electronic Resource
    A complicated case of juvenile largyneal papillomatosis (1973)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 28 (1973), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1973.tb00287.x
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  • 9
    Electronic Resource
    Electronic Resource
    The Demography of Plants (1974)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Ecology, Evolution, and Systematics 5 (1974), S. 419-463 
    Details
    ISSN: 0066-4162
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.es.05.110174.002223
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  • 10
    Electronic Resource
    Electronic Resource
    The Shapes and Sizes of Seeds (1970)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Ecology, Evolution, and Systematics 1 (1970), S. 327-356 
    Details
    ISSN: 0066-4162
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.es.01.110170.001551
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