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  • 1
    Digitale Medien
    Digitale Medien
    Absolute magnetometry at nanometer transverse spatial resolution: Holography of thin cobalt films in a scanning transmission electron microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7418-7424 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method for the absolute measurement of magnetization at nanometer spatial resolution in magnetic thin films has been developed. A biprism placed in the illumination system of a scanning transmission electron microscope allows the operation of two distinct holography modes. The absolute mode displays a linear change in phase difference for regions of constant magnetization and thickness and the slope determines the magnitude of magnetization. The differential mode displays a constant value of phase difference in these regions allowing a simple and straightforward determination of domain wall profiles. Micromagnetic structure extracted from identical areas of thin Co films is compared using the new holography modes, differential phase constrast Lorentz microscopy and conventional Fresnel Lorentz microscopy in the same instrument.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356658
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  • 2
    Digitale Medien
    Digitale Medien
    Improved instrument for medium energy electron diffraction and microscopy of surfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1215-1219 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The REMEDIE system for reflection electron microscopy and electron diffraction at intermediate energies (0.5–20 keV) has been rebuilt with an improved imaging resolution of better than 10 nm, a convenient and versatile system for observation diffraction patterns and provision for specimen preparation and treatment suitable for surface structural studies. The current capabilities of the instrument are illustrated by results obtained from cleaved and annealed silicon (111) surfaces with or without thin deposited silver and gold layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1137978
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  • 3
    Digitale Medien
    Digitale Medien
    Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 698-704 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By using a nanoprobe electron beam 4 A(ring) in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345774
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  • 4
    Digitale Medien
    Digitale Medien
    Determination of the local Al concentration in AlxGa1−xAs-GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 A(ring) electron beam (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1454-1456 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel method for determining the local concentration of Al in the AlxGa1−xAs layer of AlxGa1−xAs-GaAs multiple quantum well structures is reported. By scanning a 10 A(ring) electron beam across the interface, the (200) dark-field scanning transmission electron microscopy (STEM) image shows the contrast of the AlxGa1−xAs-GaAs multilayer since the intensity of the (200) diffraction is sensitive to the Al concentration. The line scan intensity profile of the (200) diffraction, along a uniform specimen region of known thickness, shows the intensity variation of the (200) diffraction and reflects the local content of Al in each region. The simulation of the nanodiffraction patterns produces a chart of the (200) diffraction intensity versus the Al concentration for the determination of the local change of the Al concentration. A molecular beam epitaxy grown AlxGa1−xAs-GaAs specimen (x=0.57 as determined from Raman spectroscopy) is tested and the dark-field STEM studies show two thin layers of x=0.46 at the 1/3 and 2/3 height level within every AlxGa1−xAs layer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100695
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  • 5
    Digitale Medien
    Digitale Medien
    Comment on "Electron holographic study of ferroelectric domain walls'' (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2446-2447 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109340
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  • 6
    Digitale Medien
    Digitale Medien
    Thickness dependence of ferroelectric domains in thin crystalline films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thickness dependence of ferroelectric domains in thin free-standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112835
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  • 7
    Digitale Medien
    Digitale Medien
    High Resolution Electron Microscopy (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 38 (1987), S. 57-88 
    Details
    ISSN: 0066-426X
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1146/annurev.pc.38.100187.000421
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  • 8
    Digitale Medien
    Digitale Medien
    High-resolution electron microscopy of disordered Au–15at.%Mn alloys (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 43 (1987), S. 41-48 
    Details
    ISSN: 1600-5740
    Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1107/S010876818709832X
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  • 9
    Digitale Medien
    Digitale Medien
    The structure of Pt particles on γ-Al2O3 support (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 300-305 
    Details
    ISSN: 1600-5767
    Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Thema: Geologie und Paläontologie , Physik
    Notizen: Samples of the catalyst Pt/γ-Al2O3 have been examined by high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) and microdiffraction techniques. An epitaxic relationship of metallic Pt crystals on the γ-Al2O3 has been established. In both calcined and reduced samples, the crystalline oxide α-PtO2 was found along with metallic Pt. The oxide has a hexagonal lattice with unit-cell dimensions about 6% smaller than those previously reported. Microdiffraction from areas less than 20 Å in diameter, combined with HRTEM, STEM and secondary electron microscopy (SEM), has proved to be a very powerful technique for the study of the structures of particles less than 50 Å in size.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1107/S0021889887086631
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  • 10
    Digitale Medien
    Digitale Medien
    Electron microscopy of crystals with time-dependent perturbations (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 847-853 
    Details
    ISSN: 1600-5724
    Quelle: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Notizen: The electron microscope image intensity of a thin crystal is described as a time average of the image of a crystal perturbed by time-dependent fluctuations corresponding to thermal motion of the atoms or low-energy electronic excitations. For very thin crystals the phase-object approximation indicates that images having atomic resolution may be obtained from the inelastically scattered electrons. It is shown that the use of suitable approximations allows estimates to be made of the contribution of the inelastically scattered electrons to the high-resolution images of thicker crystals. The resolution of images formed by inelastically scattered electrons is not affected by the non-localization of the inelastic scattering process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1107/S0108767388004751
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