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  • Digitale Medien  (5)
  • 85.30  (4)
  • 84.60  (1)
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  • Digitale Medien  (5)
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  • 1
    Digitale Medien
    Digitale Medien
    The characteristics of high current amorphous silicon diodes (1980)
    Springer
    Applied physics 21 (1980), S. 307-311 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 84.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00895919
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Application of amorphous silicon field effect transistors in integrated circuits (1981)
    Springer
    Applied physics 26 (1981), S. 83-86 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The work described in this paper is concerned with the possible applications in integrated circuits of thin-film field effect transistors (FETs) made from glow discharge amorphous (a-) silicon and silicon nitride. The construction and performance of inverter circuits, employing integrated a-Si load resistors, are described in some detail. The extension of this basic circuit to NAND and NOR gates, to a bistable multivibrator and to a shift register is reported. Based on the excellent photoconductive properties of a-Si an integrated addressable photosensing element has been constructed, which could have potential applications in imaging arrays.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616653
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    The characteristics and properties of optimised amorphous silicon field effect transistors (1983)
    Springer
    Applied physics 31 (1983), S. 87-92 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A series of experiments aimed at improving the performance of amorphous silicon field effect transistors has been carried out. The dc and dynamic characteristics of the optimised devices are described. Stable devices capable of ON-currents of the order of 100 μA with OFF-currents ≃10−11 A can be fabricated which could, in principle, be used to address more than 1000 lines of a liquid crystal display. The properties of the highly conducting ON-state channel have also been studied. The field effect mobility, 0.3 cm2 V−1 s−1 at room temperature, has an activation energy of 0.1 eV at the higher gate voltages. The possible reasons for the improvement in performance over earlier devices are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616310
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Application of amorphous silicon field effect transistors in addressable liquid crystal display panels (1981)
    Springer
    Applied physics 24 (1981), S. 357-362 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract It is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed in some detail. Two important points are stressed: (i) a-Si device arrays can be produced by well-established photolithographic techniques, and (ii) satisfactory operation at applied voltages below 15VV is possible. Small experimental 7×5 transistor panels have been investigated and it is shown that with the present design up to 250-way multiplexing could be achieved. The reproducibility of FET characteristics is good and in tests so far no change has been observed after more than 109 switching operations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899734
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  • 5
    Digitale Medien
    Digitale Medien
    A new vertically integrated amorphous silicon addressable image sensor (1984)
    Springer
    Applied physics 34 (1984), S. 175-178 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 85.30 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The paper describes the design and development of an amorphous silicon (a-Si) image sensing element that combines the excellent photo-conductive properties ofa-Si with the proven switching performance ofa-Si field effect transistor (FET) devices. In the present design the switching element is fabricated on top of the photoconductor, making possible an imaging element that is compact, and capable of being produced in linear or two-dimensional arrays. The output current of an integrated elementary device varies from about 10 ΜA at a white light intensity of 1017 photons s−1 cm−2 to about 10 nA at 1013 photons s−1 cm−2. This large dynamic range, providing an excellent grey scale, can be achieved with read-times of about 20 Μs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616914
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