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  • 1990-1994  (7)
  • 1992  (7)
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  • 1990-1994  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351737
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351212
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion mixing of III-V compound semiconductor layered structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351079
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Planar, low-loss optical waveguides fabricated by solid-phase regrowth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1269-1271 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar, low-loss AlGaAs/GaAs waveguides have been fabricated using the solid-phase regrowth (SPR) process. Single-mode waveguide with a propagation loss as low as 1.6 dB/cm have been obtained. This process requires only thin-film deposition and low-temperature short-duration annealing (i.e., 650 °C for 30 s), thus making the SPR method a much simplified technique to induce compositional disordering. Simultaneous electrical isolation and compositional disordering are also demonstrated with the SPR process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107614
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    The Si/Pd(Si,Ge) ohmic contact on n-GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3016-3018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Si/Pd ohmic contact to n-GaAs has been developed based on the solid-phase regrowth mechanism. The Si/Pd contact usually yields a contact resistivity of 2×10−6 Ω cm2. A thin (∼15 A(ring)) layer of additional Ge or Si embedded in the Pd layer of the Si/Pd contact structure is used to reduce the contact resistivity from ∼2×10−6 to 2–4×10−7 Ω cm 2 without suffering from a loss of thermal stability. The reduction in the contact resistivity is explained in terms of the formation of an n+ GaAs surface layer via solid-phase regrowth. The modified contacts show uniform surface and interface morphologies. The contact resistivity of the modified contacts remains in the mid-10−6 Ω cm2 range after annealing at 400 °C for 50 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106794
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution SIMS (secondary ion mass spectrometry) depth profiles of Ge/Pd ohmic contacts on InP are obtained by sputter-etching from the back (semiconductor) side. The samples contain an InGaAs-etch stop layer, to allow chemical thinning, and InGaAsP marker layers, which allow alignment and calibration of the depth profiles on the nm scale. At 200 °C, a Pd-In-P alloy layer is observed to form at the contact interface. The thickness of this layer is dependent on the amount of metallic Pd available for reaction. Subsequent processing at 325 °C results in the partial dissolution of this alloy layer, as PdGe forms at the contact interface, and regrowth of the liberated InP. Ge is detected in the regrown region but is not observed to diffuse into the substrate. Ge epitaxy is not observed at the contact interface at 325 °C, in contrast to the behavior of the Ge/Pd-GaAs contact. The experimental evidence suggests that regrowth is a key step in the formation of the ohmic contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106428
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    On internal resonance of nonlinear, vibrating systems with many degrees of freedom (1992)
    Springer
    Applied mathematics and mechanics 13 (1992), S. 29-37 
    Details
    ISSN: 1573-2754
    Keywords: nonlinear oscillations ; phase-locked solution ; phase portrait
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Mathematics , Physics
    Notes: Abstract The problem of periodic solutions of nonlinear autonomous systems with many degrees of freedom is considered. This is made possible by the development of a modified version of the KBM method[1]. The method can be used to generate limit cycle phase portrait, amplitude, period and to indicate stability of the limit cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450426
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    Paper (German National Licenses)
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