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Photoluminescence measurements of complex defects in Si-doped Al0.3Ga0.7As (1994)

de Paula, Ana M. ; Medeiros-Ribeiro, G. ; de Oliveira, A. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 8051-8054

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The optical properties of a Si-doped Al0.3Ga0.7As alloy are studied as a function of the Si dopant concentration by means of photoluminescence measurements. The photoluminescence spectra show peaks due to electron Si acceptors and Si-related complex-defects transitions, which we tentatively attribute to Si acceptor coupled to an As vacancy (SiAs-VAs) and Si donor coupled to a Ga(Al) vacancy (SiIII-VIII). We show that the importance of each of these defects to the alloy optical properties is strongly dependent on the growing parameters. Spectrum for a planar-doped sample also showing peaks related to Si complex defects is presented. © 1994 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357875

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Digitale Medien

Competition between negative and positive photoconductivity in silicon planar-doped GaAs (1994)

de Oliveira, A. G. ; Ribeiro, G. M. ; Soares, D. A. W. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2258-2260

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photo-Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar-doped GaAs samples, with silicon nominal concentration ranging from 1.4×1012 to 8.8×1013 cm−2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical Tc, the negative photoconductivity effect is dominant, while above Tc the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.111637

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