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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and magnetic properties of metal/cobalt ferrite composite thin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4893-4895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To improve the saturation magnetization (Ms) of cobalt ferrite thin films, metal/cobalt ferrite composite thin films were prepared by controlling the sputtering conditions such as oxygen concentration in sputtering gas, substrate temperature, composition of the thin films. With decreasing the oxygen ratio from 50% to 5% in sputtering gas and increasing the substrate temperature from room temperature to 400 °C, the Ms of the thin films was increased and the coercivity (Hc) decreased. The result was attributed to deposition of the metal/cobalt ferrite thin films. With increasing the metal ratio in the thin films, preferred orientation of (111) of cobalt ferrite was worsened in the thin films. The metal deposited in the thin films was identified as cobalt with (002) preferred orientation. In higher cobalt content than the stoichiometric composition of CoFe2O4, the thin films with high Ms and Hc could be deposited in the wide substrate temperature range of 200–400 °C. We can prepare the metal/cobalt ferrite composite thin films with Ms about 580 emu/cm3 and Hc 1700 Oe by controlled the sputtering conditions. The thin films are thought to be applicable to the magnetic recording media with high recording density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361642
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 891-895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of spacers in modulation-doped Zn1−xCdxSe/ZnSe:Cl multiple quantum wells (MD-MQWs) was investigated by photoluminescence (PL) and time-of-flight secondary-ion-mass spectrometry (TOF-SIMS). A comparison was made between structures with and without spacers as a function of annealing temperature. The diffusion of Cl and Cd was monitored by TOF-SIMS depth profiling and photoluminescence. Although TOF-SIMS does not show any significant diffusion of Cl and Cd in both structures at temperatures up to 385 °C, the PL results indicate the modification of optical properties in the Zn1−xCdxSe/ZnSe:Cl MD-MQWs due to annealing. Up to an annealing temperature of 385 °C, the MD-MQWs with spacers show superior optical quality in the quantum well regions, while quenching of the quantum well band-edge PL and strong enhancement of deep-level emission were observed from the MD-MQWs without spacers. This phenomenon suggests that the radiative deep-level emission may provide more efficient channel for electron–hole recombination with increasing annealing temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370863
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  • 3
    Electronic Resource
    Electronic Resource
    Angle chord integral inverter and a rotating type optical probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1730-1734 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The inversion problem of angle dependent chord integrals is theoretically studied and a rotating type optical probe is developed for its application. The proposed solution is computationally efficient and robust to measurement additive noise. The probe system constructed is tested in an inductively coupled plasma source by measuring a spectral line intensity of argon plasma. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149659
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  • 4
    Electronic Resource
    Electronic Resource
    A frequency modulated mm-wave interferometer with a single sideband upconverter (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2516-2519 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A frequency modulated interferometer is developed, which uses a 94 GHz Gunn oscillator and a single sideband (SSB) upconverter as a frequency modulator. An SSB upconverter makes it possible to use a heterodyne phase measurement technique with one mm-wave source. In addition, the influence of frequency drift and phase noise of a mm-wave source on the phase measurement can be reduced. In this work, the performance of a SSB upconverter as a frequency modulator is examined. Also, overall performance of the mm-wave interferometer with a SSB upconverter and line density measurement results in a mirror device are described. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149784
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  • 5
    Electronic Resource
    Electronic Resource
    Overview of Korea Superconducting Tokamak Advanced Research diagnostics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1397-1401 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Korea Superconducting Tokamak Advanced Research (KSTAR) project is the Korean national fusion program for constructing a superconducting tokamak, that is capable of a steady-state operation. Currently, the KSTAR diagnostic group is concentrating on conceptual design activities to provide measurements of the plasma behavior that is necessary to satisfy the KSTAR missions. A diagnostic overview for the KSTAR device is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149631
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  • 6
    Electronic Resource
    Electronic Resource
    A chamber for laboratory studies of atmospheric aerosols and clouds (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4364-4368 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A stainless-steel chamber has been constructed and interfaced to a Fourier transform infrared spectrometer for the purpose of studying laboratory simulated atmospheric aerosols and clouds. The chamber is cylindrical in design and is comprised of a double-walled inner assembly that resides within an outer vacuum jacket. The volume of the aerosol sample region is 28 L. By circulating refrigerated methanol between the double walls of the inner assembly, constant temperature control of the sample region can be maintained between 187 and 300 K. A study of temperature uniformity within the chamber at 291, 240, and 187 K revealed a standard deviation in temperature of 1.6 K as determined from measurements made using five copper–constantan thermocouples. Good agreement is obtained between thermocouple measured temperatures and rotational temperatures computed from infrared absorption spectra of methane gas. The chamber described here has been used to examine heterogeneous chemistry of solid powder samples. A technique of generating an aerosol sample by rapidly dispersing a solid powder in a gas is presented. The half-life of a γ-alumina aerosol sample was measured to be 25 min. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147537
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  • 7
    Electronic Resource
    Electronic Resource
    Studies of ZnSe-based semiconductor thin films using grazing incidence x-ray scattering and diffraction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 237-243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray scattering and x-ray diffraction techniques have been employed to investigate the microstructures in various ZnSe-based semiconductor thin films grown on GaAs substrates by molecular beam epitaxy and metalorganic chemical vapor deposition methods. The results are also used for a comparison of the interfacial roughness and overall quality of the II–VI thin films prepared by these two different growth methods. Structural parameters such as the interfacial roughness and layer thickness obtained from the scattering measurements and lattice constants obtained from the x-ray diffraction pattern around the GaAs(004) peak can be correlated with the film deposition rate, compound composition, and lattice strain in the epilayers. We thus demonstrate that x-ray scattering techniques in conjunction with diffraction measurements are useful tools for nondestructive characterization of buried interfaces in semiconductor layer materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369434
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional mapping of the plasma density in the upper atmosphere with computerized ionospheric tomography (CIT) : The 39th annual meeting of division of plasma physics of APS (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2010-2021 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tomographic imaging of the ionosphere is a recently developed technique that uses integrated measurements and computer reconstructions to determine electron densities. The integral of electron density along vertical or oblique paths is obtained with radio transmissions from low-earth-orbiting (LEO) satellite transmitters to a chain of receivers on the earth's surface. Similar measurements along horizontal paths can be made using transmissions from Global Position System (GPS) navigation satellites to GPS receivers on LEO spacecraft. Also, the intensities of extreme ultraviolet (EUV) emissions can be measured with orbiting spectrometers. These intensities are directly related to the integral of the oxygen ion and electron densities along the instrument line of sight. Two-dimensional maps of the ionospheric plasma are produced by analyzing the combined radio and EUV data using computerized ionospheric tomography (CIT). Difficulties associated with CIT arise from the nonuniqueness of the reconstructions, owing to limited angle measurements or nonoptimal receiver location. Improvements in both reconstruction algorithms and CIT measurement systems are being implemented to overcome these difficulties. New imaging systems being developed employ CIT for large area mapping of the plasma densities in the ionosphere. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872872
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368300
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  • 10
    Electronic Resource
    Electronic Resource
    New method to predict the magnetic properties of thin gauged Si–Fe sheets : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6483-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367702
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