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  • 1
    Electronic Resource
    Electronic Resource
    DNA replication of parvovirus B 19 in a human erythroid leukemia cell line (JK-1) in vitro (1993)
    Springer
    Archives of virology 131 (1993), S. 201-208 
    Details
    ISSN: 1432-8798
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A major limitation of studies on the parvovirus B 19, a causative agent of transient aplastic crisis, has been the absence of appropriate cell lines permissive for the virus. In the present study, a human erythroid leukemia cell line (JK-1) was shown to support B 19 virus DNA replication in vitro. Forty-eight hours after virus inoculation of JK-1 liquid cell cultures, the average number of B 19 genome copies was estimated at 3,000 per cell by DNA dot blot analysis. The addition of erythropoietin increased B 19 copy number to 10,000 per cell. The presence of replicative forms of the B 19 virus genome was demonstrated by Southern blot analysis. Although persistent infection of B 19 virus was not observed in JK-1 cells, this culture system will be of value in elucidating the molecular basis of the erythroid specificity of parvovirus B 19.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01379092
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  • 2
    Electronic Resource
    Electronic Resource
    Discussion of Papers Presented at the Symposlum: Electrical Charge Seperation during Ice Deformation and Fracture under a Temperature Gradient. (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 4332-4332 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100244a616
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of saturation magnetization and coercivity of Co-Cr/Al multilayered films on Co-Cr layer thickness : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6056-6058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co81Cr19/Al multilayered films with thicknesses of Co81Cr19 layers in the range of 46–170 A(ring) and Al ones of 7 A(ring) have been prepared on glass-slide substrate at room temperature by using the facing targets sputtering (FTS) apparatus. The dependence of the magnetic and crystallographic characteristics on the thickness of Co-Cr layers have been investigated. The magnetoresistance effect of the specimen films have been also examined. The intrinsic Co81Cr19 layers were composed of hcp phase crystallites with well orientation of the c axis normal to the film plane. Both the crystallinity of Co81Cr19 layers was improved and the d spacing between the c planes was expanded by using the Al interlayers as ultrathin as 7 A(ring). The easy direction of magnetization in the films was perpendicular to the film plane. The saturation magnetization, the coercivity, the in-plane squareness ratio and the anisotropy field depended strongly on the thickness of Co81Cr19 layer. On the other hand, the magnetoresistivity ratio was negative and its absolute value was as small as 0.13%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350044
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  • 4
    Electronic Resource
    Electronic Resource
    Annealing dependence of coercivity, anisotropy field, and resistivity for amorphous CoZrNb films deposited by dc planar magnetron sputtering : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5011-5013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous CoZrNb films have been deposited by magnetron sputtering which can greatly improve the utilization efficiency of a magnetic alloy target with high permeability. The saturation magnetization 4πMs of the CoZrNb films was about 14 kG. The easy and hard axes of magnetization of the films were orthogonal to each other in the film plane. The coercivity Hc in the easy and hard directions decreased from 0.9 to 0.2 Oe after annealing in a rotating dc magnetic field HA. However, Hc increased drastically to 20 Oe by heating at the annealing temperature TA of 400 °C. With increasing TA and HA, the anisotropy field Hk gradually decreased from 12 to 1 Oe and the resistivity ρ also decreased from 200 to 150 μΩ cm. Consequently, it was found that Hc and ρ depended strongly on TA; and that Hk had definite relationships with both TA and HA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348158
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  • 5
    Electronic Resource
    Electronic Resource
    Broadband reflectometry for the density profile and fluctuation measurements in the JT-60 tokamak (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3524-3527 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A broadband reflectometric system in O-mode operation has been developed for the density profile determination, MHD and turbulent fluctuation measurement, and evaluation of the particle diffusion coefficient in the JT-60 tokamak. For the profile determination, full Ka-Q band frequencies of BWOs have been swept in 750 μs, in order to minimize the effect of doppler shift due to the fluctuation of reflection layers. The heterodyne fixed-frequency reflectometer has unveiled its effectiveness to probe MHD activities, diagnosing the m=1 tearing mode oscillations. It has also enabled the observation of the dramatic suppression of edge plasma density fluctuations at the L- to H-mode transition in the LHCD limiter plasma. Furthermore, the propagation delay of density pulses has been observed by different fixed-frequency channels during a series of sawteeth, from which the particle diffusion coefficient was evaluated, with a newly proposed method applicable to fully diffusive plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141562
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  • 6
    Electronic Resource
    Electronic Resource
    Doxapram inhibits carotid sinus baroreceptors in rabbits (2005)
    Oxford, UK : Blackwell Science Ltd
    Autonomic & autacoid pharmacology 25 (2005), S. 0 
    Details
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 To clarify the effects of doxapram on the baroreflex, we recorded carotid sinus nerve (CSN) activity in isolated and perfused carotid artery bifurcations of rabbits. 2 The CSN activity due to chemoreceptor stimulation was blocked by resection of the nerve branches from the carotid body. After the resection, the CSN activity was correlated to increase of carotid sinus (CS) pressure. 3 Administration of doxapram reduced the CSN activity originating from baroreceptors. The effect of doxapram on baroreceptors was dose dependent and reversible. 4 It is unlikely that doxapram altered CS wall mechanics because CS pressure did not change in the presence of the drug. 5 We conclude that doxapram acts on the cardiovascular system in part by inhibiting the negative feedback loop that originates in CS baroreceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1474-8673.2005.00336.x
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of Al overlayer thickness on the leakage current of radiation detectors using Nb/Al-AlOx/Nb superconducting tunnel junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4761-4765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nb/Al-AlOx/Nb superconducting tunnel junctions for the application of radiation detectors were fabricated using dc magnetron sputtering. The surface morphology of polycrystalline Nb films was observed using an atomic force microscope. Junctions with various Al film thicknesses were fabricated. The leakage current of the junctions is found to decrease as the Al thickness increases, indicating an improvement of the Al film coverage over the Nb surface. X rays were detected with the junctions prepared and the low leakage property across the junction makes possible x-ray detection with various size junctions up to 200×200 μm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357246
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  • 8
    Electronic Resource
    Electronic Resource
    Dependence of lasing characteristics of quantum well lasers on substrate orientation: Tight-binding theory (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 881-883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-structure analysis using the tight-binding method indicates that there is a significant dependence of lasing properties of GaAs/AlGaAs quantum well lasers on substrate orientation, which suggests the importance of choosing the substrate orientation carefully for improving lasing properties. These results are mainly due to changes in the in-plane effective mass of the heavy hole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104466
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  • 9
    Electronic Resource
    Electronic Resource
    In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated a novel selective growth technology for the fabrication of quantum microstructures utilizing in situ patterning of contamination resist in the metalorganic chemical vapor deposition system. The results indicate that a GaAs quasi-quantum wire structure, as narrow as 700 nm, can be successfully fabricated, showing that this technique may be applied to fabrication technologies for quantum microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104874
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  • 10
    Electronic Resource
    Electronic Resource
    Differential gain of GaAs/AlGaAs quantum well and modulation-doped quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential gain which is an important parameter for modulation dynamics in semiconductor lasers is evaluated experimentally by measuring the gain coefficient and the carrier lifetime in GaAs/AlGaAs double-heterostructure (DH) lasers, quantum well (QW) lasers, and p-modulation-doped quantum well (p-MDQW) lasers. The results indicate that the differential gain of the QW laser is 2.4 times as high as that of the DH laser, which is consistent with the theory. In addition, it is found that improvement of the differential gain using the p-MDQW structure is not so large as that expected by the theory. This result suggests that enhanced energy broadening due to the reduction of the equivalent dephasing time τeqin, which includes both the dephasing time τin due to the intraband relaxation and the band tailing effects, significantly affects the gain spectra in the p-MDQW lasers, which is confirmed by the measurement of the spontaneous emission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104440
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