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  • 2005-2009  (3)
  • 1990-1994  (46)
  • 1985-1989  (35)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of top electrodes is one of the most important factors to determine the lifetimes of organic electroluminescence (EL) devices. An organic EL device [indium thin oxide (ITO)/N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4, 4'-diamine (TPD)/tris(8-hydroxy- quinoline)aluminum (Alq3)/Al] was prepared and a morphological change of the Al top electrode was observed during and/or after applying voltage by atomic force microscopy and scanning electron microscopy (SEM). The change in the electrode surface, i.e., the increase in surface roughness was observed during the current flow. The degradation process started from faint dark core parts and propagated into disks with different rates depending on the magnitude of applied voltage. Degraded sites of the Al electrode, which were analyzed as aluminum oxide by Auger electron spectroscopy, protruded into the air on the organic layers. In SEM images of a life-end electrode, discontinuities due to crevasse formation in the organic layers sandwiched by the ITO base and the metal top electrodes were observed in many places. These results confirm that one of the most crucial factors of the degradation process was deformation of metal and organic layers due to heat, gas evolution, and oxidation caused by applied voltage.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 599-603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 and 1000 K. Activation energies of Al acceptors and residual donors obtained from the temperature dependence of carrier density are 160 and 18 meV, respectively. 40%–60% of Al acceptors in the p-type epilayers are compensated, and hole mobility is limited by acoustic phonon scattering above 300 K and by ionized impurity scattering below 250 K.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4003-4005 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of UV preionization by a KrF laser on CO2-laser-induced optical breakdown is studied experimentally. The electron number density as well as the breakdown probability is measured as a function of KrF-laser energy. The results show that the KrF-laser preionization is quite effective in initiating the optical breakdown. Once a breakdown is initiated, however, the number of produced electrons is found to be independent of the KrF-laser energy.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1904-1907 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical breakdown streamers have been triggered in atmospheric air by laser-induced ionization. Streamers were successfully triggered even when the voltage applied to the electrodes was too low for breakdown to occur by the influence of the electrical field alone. The lifetime of the observed triggering effect has been found to be no less than 1 ms. Laser-induced streamers were photographically studied and conveniently classified by their observed shapes. In addition, the statistics of the observed phenomena have been compiled according to the classified shape. The statistics indicate that the shape of streamer is likely to be determined by the degree of laser-induced ionization. It has also been found that the speed of streamer formation is strongly related to the degree of ionization.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 666-673 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion backscattering in conjunction with channeling and blocking has been used to study the Ni-SiC(001) system after Ni deposition at room temperature and after annealing up to a temperature of 870 K. Detailed analysis of the energy spectra of backscattered ions reveals morphology and composition on an atomic scale. The results show that up to the Ni coverage studied (14.1×1015 Ni atoms/cm2) no mixing occurs between Ni and Si or Ni and C at room temperature. At a temperature of 570 K, Ni starts to react with Si and forms a disordered film with a composition close to that of Ni2Si. Prolonged annealing at temperatures up to 870 K does not result in reaction to Si-richer silicide phases. Upon annealing, C segregates to the surface of the Ni2Si film to form a layer of graphite.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 870-872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a highly efficient chemical oxygen iodine laser with industrial uses in mind. A maximum overall efficiency of 40% has been achieved at a power level of 200 W. This efficiency makes the running cost of the iodine laser comparable to that of typical yttrium-aluminum-garnet lasers. The key issues for achieving high efficiency are discussed. Using the present system, we were successful in drilling a 1-mm-thick steel plate at a power level of 60 W, which we believe is the first demonstration of material processing by a chemical oxygen iodine laser.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1134-1136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of 3C- and 6H-silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C-SiC(111) can be epitaxially grown on 6H-SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2989-2991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 746-748 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of the zinc-blende MnTe have been successfully grown directly on (001) GaAs substrates by molecular beam epitaxy. The structure and the stoichiometry of the GaAs substrate surfaces are found to be important in determining the orientation and the twin formation of the MnTe films. When the preheating treatment of the substrate was done at 580 °C and reflection high energy electron diffraction (RHEED) from the GaAs surface showed (3×1) reconstruction pattern during the treatment, the twin-free (111) oriented MnTe was obtained on it. When the preheating treatment was done at 560 °C, the weak streaked RHEED pattern with a halo was observed from the GaAs surface and the (001) oriented MnTe was obtained on it.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4764-4766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Be to TbFeCo thin-film layers results in the gradual deterioration of carrier-to-noise ratio (CNR) and optimized recording power Pw compared with that of Cr. Be and Cr composite-doped disks, whose CNR maintain over 54 dB at a recording frequency of 1 MHz, prevent bit-error-rate (BER) levels from increasing in accelerated environmental tests. It is noted that even prior to environmental stability testing, BER of Be-Cr composite-doped disks is less than that of nondoped disks. From the results obtained by Auger electron spectroscopy analysis, it is explained that this difference is caused by fluctuations in the reflections of disks resulting from varying thicknesses of extra layers formed as a result of reaction between TbFeCo and SiN. Finally, through the write-erase cycle test and differential scanning calorimetry analysis, it has been demonstrated that Be-Cr-doped disks possess a higher thermal durability than nondoped disks.
    Type of Medium: Electronic Resource
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