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  • 1
    Electronic Resource
    Electronic Resource
    Electron-beam-induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3630-3634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB)-induced pattern etching of AlxGa1−xAs (0≤x≤0.7) is described. An ultra-thin GaAs oxide at the surface of a GaAs/AlGaAs heterostructure wafer is used as a resist film. The GaAs oxide resist can be selectively removed by EB irradiation in a Cl2 ambient, which results in pattern etching of GaAs/AlGaAs. The etch rate of AlGaAs is examined as functions of substrate temperature, AlAs mole fraction, and EB flux. The results indicate that pattern etching is realized in the AlAs mole fraction range of 0≤x≤0.7
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346325
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2392-2399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage in GaAs induced by Ga+ focused-ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) intensity measurements as functions of ion energy, ion dose, and substrate temperature. By decreasing the ion energy from 10 to 1 keV, the damage depth decrease to 1/5, where damage depth is taken as the thickness at which the PL intensity recovers by wet etching. The damage depth is shallower when the etching yield is larger with the same ion energy. By increasing the ion dose, the normalized PL intensity decreases, but damage depth is nearly constant. Over 1015 ion dose, the normalized PL intensity shows a constant value. By increasing the sample temperature, the damage depth becomes shallower. At 150 °C with ion energy of 1 keV, the damage depth is less than 0.5 μm, which is the detection limit of the PL measurement in GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346497
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs pattern etching with little damage by a combination of Ga+focused-ion-beam irradiation and subsequent Cl2 gas etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6415-6419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern formation on GaAs by Ga+ focused-ion-beam (FIB) irradiation and subsequent Cl2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga+ FIB-assisted Cl2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga+-ion doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346862
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  • 4
    Electronic Resource
    Electronic Resource
    Novel electron-beam lithography for in situ patterning of GaAs using an oxidized surface thin layer as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4297-4303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first demonstration of in situ electron-beam (EB) lithography is reported, where a photo-oxidized surface thin layer of GaAs is used for a resist. The in situ EB lithography sequence consists of five processes, i.e., preparation of a clean GaAs surface, photo-oxidation for a resist film formation, direct patterning of the oxide resist by EB-induced Cl2 etching, Cl2 gas etching of GaAs surface for pattern transfer, and thermal treatment in an arsenic ambient for resist removal and surface cleaning. The GaAs wafer is never exposed to air throughout all of the above processes to avoid an unintentional surface contamination. The minimum electron dose required for patterning of the GaAs oxide resist is about 5×1016 cm−2. An overgrown layer on the patterned GaAs surface shows a good surface morphology, which strongly indicates that this technology makes it possible to repeat crystal growth and surface patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344945
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 98-100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This is the demonstration of "in-situ masking'' concept. In situ patterning of GaAs is carried out by using a photo-oxidized surface layer as a mask for subsequent Cl2 etching. Clean GaAs surface provided by molecular beam epitaxy is exposed to pure oxygen and is simultaneously irradiated with an Ar+ ion laser of the 514.5 nm line for photo-oxidation of the surface. Subsequent Cl2 gas etching of the photo-oxidized sample reveals that the GaAs oxide fills the role of an etching mask. The resistance of the oxide mask against Cl2 etching varies depending on the laser fluence with which the oxide of GaAs is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102616
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1012-1014 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern etching of GaAs at submicron size is carried out by in situ electron beam (EB) lithography using a computer-controlled pattern generator. GaAs oxide on the wafer surface is used as a resist film in EB-induced Cl2 etching. A 0.5 μm linewidth in a 1 μm pitch line-and-space pattern with flat top surface is obtained. Observations of the pattern edge with a scanning electron microscope show that the boundary between the etched area and the oxide mask area is abrupt and that the undulation of the pattern edge is less than about 30 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103551
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    In situ patterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum-well structures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 365-367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried GaAs/AlGaAs single quantum-well structures have been fabricated for the first time by in situ electron beam (EB) lithography. The process includes the molecular beam epitaxy of a GaAs/AlGaAs single quantum well, electron-beam direct writing, Cl2 gas etching, and overgrowth of an AlGaAs layer. A thin GaAs oxide layer was used as the etching mask, which was selectively formed on a clean GaAs surface by EB irradiation under an O2 ambient. Subsequent Cl2 gas etching resulted in the formation of isolated quantum wells. Prior to the overgrowth, thermal cleaning with atomic hydrogen was employed for removing the oxide mask. The cathodoluminescence image of the buried quantum well demonstrates the high quality of the resultant structure formed by in situ EB lithography.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106658
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Pharmacology of Protein Kinase Inhibitors (1992)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Pharmacology 32 (1992), S. 377-397 
    Details
    ISSN: 0362-1642
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pa.32.040192.002113
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Immunohistochemical analysis of spinal intradural xanthomatosis developed in a patient with phytosterolemia (1992)
    Springer
    Acta neuropathologica 83 (1992), S. 554-558 
    Details
    ISSN: 1432-0533
    Keywords: Phytosterolemia ; Intradural xanthomatosis ; Denticulate ligaments ; Macrophage ; Immunohistochemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Multiple intradural xanthomatous tumors developed in 48-year-old female with familial phytosterolemia. These tumors were restricted to the spinal denticulate ligaments. Histological and immunohistocheimical findings were fundamentally similar to those of tendinous xanthomas. The major cellular component of these tumors were identified as of mono-histiocytic origin because they possessed myeloid histiocytic antigen (Mac 387), CD11c and lysozyme but not CD15. Sitosterols, campesterols and cholestanols were recovered from the extract of the tumors and the lesions were confirmed to be phytosterolemic xanthomas. Schwann cells stained with anti-S100 protein were confined to the perivascular small nerve bundles and did not show xanthomatous change. Although immunohistochemical preparation of epithelial membrane antigen and desmoplakin I+II revealed the presence of non-neoplastic meningothelial cells in the superficial portion of the tumors, they were too few to play a significant role in the development of these xanthomas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00310036
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructural Development in Bearing Steel during Rolling Contact Fatigue (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 4255-4260 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: It is well known that microstructural changes occur in a steel bearing, when the bearing isoperated under conditions involving high cyclic stresses. When combined with relatively hightemperatures, such microstructural changes result in the flaking of the bearing raceway. In this paper,microstructural changes that occurred during rolling contact fatigue were investigated, and therelationship between these changes and fatigue life are discussed in association with therecrystallization behavior of martensite. Conventional bearing steel SUJ2 (SAE52100) wassubjected to partial solution treatment at 1133K for 2.4ks followed by oil quenching. The quenchedmaterial with a martensitic structure was tempered at 443K for 7.2ks, and then subjected to rollingcontact fatigue testing. The testing was performed at temperatures ranging from 373K to 443Kand surface pressures of 4.6GPa or 5.5GPa. During testing at 373K, flaking occurred from thesurface of the raceway due to non-metallic inclusion and without any marked microstructuralchanges. On the other hand, in the case of testing at 403K or more, flaking occurs after obviousmicrostructural changes. Firstly, dark etching constituent (DEC) formed around the area ofmaximum shear stress, which was followed by the formation of white etching constituent (WEC)within the DEC at 80 and 30 degrees to the rolling direction. TEM observations showed the changefrom martensite lath to dislocation cell structure within the DEC, and also the existence of fineferrite grains of 20nm through 100nm within the WEC. Arrhenius plots for the fatigue life indicatedthat the activation energy of the fatigue process corresponded to that of carbon diffusion in bccferrite. These results suggest that rolling contact fatigue originated from the WEC is controlled bythe diffusion of carbon in the ferrite matrix
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.4255.pdf
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