Bibliothek

X
Ihre Suchhistorie ist leer.
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • 2005-2009  (7)
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Amyloid-β peptide enhances tumor necrosis factor-α-induced iNOS through neutral sphingomyelinase/ceramide pathway in oligodendrocytes (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 94 (2005), S. 0 
    Details
    ISSN: 1471-4159
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Although accumulating evidence demonstrates that white matter degeneration contributes to pathology in Alzheimer's disease (AD), the underlying mechanisms are unknown. In order to study the roles of the amyloid-β peptide in inducing oxidative stress damage in white matter of AD, we investigated the effects of amyloid-β peptide 25–35 (Aβ) on proinflammatory cytokine tumor necrosis factor-α (TNF-α)-induced inducible nitric oxide synthase (iNOS) in cultured oligodendrocytes (OLGs). Although Aβ 25–35 by itself had little effect on iNOS mRNA, protein, and nitrite production, it enhanced TNF-α-induced iNOS expression and nitrite generation in OLGs. Aβ, TNF-α, or the combination of both, increased neutral sphingomyelinase (nSMase) activity, but not acidic sphingomyelinase (aSMase) activity, leading to ceramide accumulation. Cell permeable C2-ceramide enhanced TNF-α-induced iNOS expression and nitrite generation. Moreover, the specific nSMase inhibitor, 3-O-methyl-sphingomyelin (3-OMS), inhibited iNOS expression and nitrite production induced by TNF-α or by the combination of TNF-α and Aβ. Overexpression of a truncated mutant of nSMase with a dominant negative function inhibited iNOS mRNA production. 3-OMS also inhibited nuclear factor κB (NF-κB) binding activity induced by TNF-α or by the combination of TNF-α and Aβ. These results suggest that neutral sphingomyelinase/ceramide pathway is required but may not be sufficient for iNOS expression induced by TNF-α and the combination of TNF-α and Aβ.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-4159.2005.03217.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Sexually dimorphic expression of Usp9x is related to sex chromosome complement in adult mouse brain (2005)
    Oxford, UK : Blackwell Science Ltd
    European journal of neuroscience 21 (2005), S. 0 
    Details
    ISSN: 1460-9568
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: We found the expression of Usp9x, an X-linked gene which encodes a ubiquitin protease implicated in synaptic development, to be significantly higher in the adult female mouse brains than in male brains. The sex difference in expression of Usp9x was localized to specific brain regions such as neocortex. Furthermore, in gonadally intact and gonadectomized mice, XX mice expressed Usp9x mRNA and protein more highly than XY mice irrespective of their gonadal type. No sex difference was found in the neonatal brain or peripheral tissues such as the adult kidney. This finding implies that the difference in sex chromosome complement between XY males and XX females could potentially contribute to sexual differentiation of brain structure and function. The relation of genomic dose and Usp9x expression could help explain the neural and behavioural phenotype of women with XO Turner syndrome.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1460-9568.2005.04134.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Protection of crayfish, Cambarus clarkii, from white spot syndrome virus by polyclonal antibodies against a viral envelope fusion protein (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 28 (2005), S. 0 
    Details
    ISSN: 1365-2761
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Biologie , Medizin
    Notizen: White spot syndrome virus (WSSV) is a large double-stranded DNA virus, causing considerable mortality in penaeid shrimp and other crustaceans. WSSV produces five major structural proteins, including two major envelope proteins, VP28 and VP19. To produce VP28 and VP19 as a single protein for antibody production, DNA sequences encoding both open reading frames were fused together and cloned into pET-22b(+) expression vector. The fusion protein, VP(19+28), was expressed in Escherichia coli, purified using Ni2+His affinity chromatography and injected into a rabbit. Antiserum collected from the immunized rabbit was tested in vivo for ability to protect crayfish, Cambarus clarkii, from disease caused by WSSV. Fifteen days after challenge with WSSV, treatment with VP(19+28) antiserum gave 100% protection against disease in the ambient temperature range of 15–22 °C and 65% protection at a constant temperature of 26 °C. These results demonstrated VP(19+28) antiserum is effective in protection of crayfish from WSSV and confirmed that VP19 and VP28 play an important role in WSSV host infection. Targeting both VP19 and VP28 may be effective for the design of both immunotherapeutic medicines and reagents to detect WSSV.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2761.2005.00630.x
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 33-36 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: A new approach to obtain Si nanostructures on insulating layer is proposed by laser irradiation onultra-thin hydrogenated amorphous silicon (a-Si:H) films with subsequently thermal annealing. Itwas found that the surface nanostructuring was occurred when the laser fluence exceeded thethreshold value as revealed by AFM images. The size and area density of formed Si nanostructureswere depended on the laser fluence and film thickness while thermal annealing played an importantrole in the size and its distribution. The results showed that a high density (〉1011cm-2) Sinanostructures with average lateral size of 10-20nm can be achieved by the present technology
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.33.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 557-560 
    Details
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Notizen: Light emitting diode with MOS structures containing multiple-stacked Si quantum dots(QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperaturewhen the negative gate bias exceeded the threshold voltage. The luminescence intensity wasincreased linearly with increasing the injected current density. The possible luminescencemechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDsand the improvement of EL intensity was demonstrated
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.557.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Effects of Electric Field Annealing on Recrystallization Texture and Plastic Strain Ratio (r-Value) of IF Steel Sheet (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 3478-3483 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: Effects of electric field annealing on recrystallization texture and averageplastic strain ratio (r value) of IF steel sheet were studied by mean of X ray diffractionODF analysis and the tensile test. Specimens of 75% cold-rolled IF steel sheet wereannealed at 850flC for 25min,with and without electric field annealing respectively.Results show that the electric field annealing does not change the type ofrecrystallization texture and its formation mechanism in IF deep-drawing steel sheet,but improves the formation and development of recrystallization i-fiber texture,enhances the intensity of i-fiber texture, and retards the formation and development ofc-fiber texture. Comparing with the conventional annealing, electric field annealingimproves the average plastic strain ratio (r value). Possible reasons for theintensification of recrystallization i-fiber texture with the electric field applied mayattribute to the reduction of stored energy, thus hindering the formation of otherorientated nuclei and enhancing the nucleating ratio of i-oriented nuclei. And theintensification of recrystallization i-fiber texture was considered as the main reasonfor the enhancement of the plastic strain ratio (r value) in IF steel sheet
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3478.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    The H+ related defects involved in domain reversal for both near-stoichiometric and heavily Mg-doped lithium niobate crystals (2005)
    Springer
    The European physical journal 43 (2005), S. 347-353 
    Details
    ISSN: 1434-6036
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract. Domain reversal was performed on both near-stoichiometric and heavily Mg-doped lithium niobate crystals. H+ related defect structures in these two types of crystals were studied through the infrared absorption spectra. It is found that the intensity of some decomposed peaks of absorption band change apparently during domain reversal for near-stoichiometric lithium niobate crystals but not for heavily Mg-doped lithium niobate crystals. According to these experimental results, distinct models about H+ related defect structure in LiNbO3 lattice were supposed for them. Nb4+Li and Mg3-Nb were considered as the centers of H+ related defect complex for near-stoichiometric and heavily Mg-doped lithium niobate crystals respectively. Different behavior of them was used to explain the difference of infrared absorption spectra during domain reversal between two types of crystals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1140/epjb/e2005-00062-2
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...