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  • 2000-2004  (29)
  • 1990-1994  (61)
  • 1980-1984  (17)
  • 1970-1974  (8)
  • 1965-1969  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy induced by cold rolling in Co and Co-Fe alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 396-403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The roll reduction and concentration dependences of the uniaxial magnetic anisotropy induced by cold-rolling, Kur, were investigated for hexagonal Co and Co-Fe alloys. The maximum value of Kur was 3×105 erg/cm3 at 10%–20% roll reduction for Co and Co-1.5% Fe. The easy direction was perpendicular and parallel to the rolling direction for the alloys containing less than 1.2% Fe and more than 1.2% Fe at room temperature, respectively. The easy direction of Kur changed at 260 °C for Co. The texture produced by cold-rolling was detected by Schulz's method. The induced anisotropies were evaluated by using the Ku1, Ku2, and the x-ray reflected intensities. The calculated values and easy direction agreed well with the experimental results. The origin of Kur for hexagonal Co and Co-Fe alloys is clearly explained by formation of rolling texture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347728
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  • 2
    Electronic Resource
    Electronic Resource
    S-IV-02 
C2C12 Cells Differente in Three Dimensional Culture in Collagen Gel (2004)
    Oxford, UK; Malden, USA : Blackwell Science Inc
    Wound repair and regeneration 12 (2004), S. 0 
    Details
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aim: The movements of the cell population are different between 2-D culture and 3-D culture. From the observation of morphology of skeletal muscle cell 3-D culture, We expect that skeletal muscle cells differentiation is accelerate in the collagen gel 3-D culture, and the proliferation is suppressed. The purpose of this study is to investigate the difference between 2-D culture and 3-D culture of C2C12 cells. Methods: C2C12 skeletal muscle cells are incubated following three difference conditions for 48 hours, plastic dish 2-D culture, collagen coated dish 2-D culture and collagen gel 3-D culture. The culture medium is Dulbecco's modified Eagle medium containing 10% fetal bovine serum and 1% penicillin/streptomycin. Collagens are removed by collagenase treatment and cells are homogenized. After centrifugation the top clear layer is used for CPK assay and protein development analysis by Western blotting Results: After 48 hour incubation, we observed cell morphology by a phase contract microscope. Cell fusion was observed in collagen gel 3-D culture. The fusion cells have many nucleus in the cytoplasm called synthetium. But in plastic dish 2-D culture and in collagen coated dish 2-D culture synthetiums were not observed and cells were mononuclear and monolayer. Cell prolieration was suppressed in collagen gel 3-D culture. CPK activity was five times activated in collagen gel 3-D culture than in plastic dish 2-D culture. Conclusions: We suggest skeletal muscle cells C2C12 are activate differentiation by collagen gel 3-D culture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1067-1927.2004.abstractj.x
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  • 3
    Electronic Resource
    Electronic Resource
    Angiosarcoma of the scalp: absence of vascular endothelial cadherin in primary and metastatic lesions (2001)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 144 (2001), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A 73-year-old man with angiosarcoma of the scalp died about 1 year after disease onset, despite systemic and topical administration of recombinant interleukin-2. Histopathology showed typical changes of endothelial cells with very sparse lymphocytic infiltration into the tumour. An autopsy revealed that the primary site penetrated cranial bone and invaded vertically into the subarachnoid space. Multiple metastases to lung, chest wall, vertebrae and ribs were also found. On immunofluorescence staining, the expression of vascular endothelial cadherin, which is present in normal endothelium, was absent from both primary and metastatic sites. This may have promoted local invasion and metastasis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2001.04032.x
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  • 4
    Electronic Resource
    Electronic Resource
    Compound heterozygous group A xeroderma pigmentosum patient with a novel mutation and an inherited reciprocal translocation (2000)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 143 (2000), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The severity of neurological abnormalities in Japanese group A xeroderma pigmentosum (XP-A) patients correlates with the sites of non-sense mutation in the XP-A gene. We describe a patient who presented with a more severe photosensitivity and neurological abnormality than those in typical Japanese XP-A patients with a splicing mutation in intron 3. The patient was compound heterozygous for the splicing mutation in intron 3, which resulted in formation of a non-sense codon in exon 4, and a novel non-sense mutation at codon 208 in exon 5, a C to T transition creating a stop codon TAG. Although the combination of these mutations might have been thought to cause only mild neurological signs, the longer truncated XP-A proteins than those of typical XP-A patients may have resulted in severe neurological symptoms. This phenomenon may be explained by a translocation of chromosome (1;10)(q25·3;q22·3) inherited from his father.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03611.x
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon nitride overlayer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 39-41 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon (a-Si:H) has been investigated to find the origin of the difference of a-Si:H/SiN interface properties caused by the order of deposition. Sheet conductance of the on-state in inverted staggered (a-Si:H on SiN) thin-film transistors (TFTs) increases gradually with the substrate temperature (Tsub) of SiN, but decreases rapidly with the Tsub of SiN in staggered TFTs (SiN on a-Si:H). Photoluminescence experiments indicated that the degradation in staggered TFTs was due to the creation of defects in a-Si:H by the deposition of the SiN overlayer. It was shown by Fourier transform infrared attenuated total reflection that the origin of the defects was hydrogen effusion from a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104430
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102493
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  • 7
    Electronic Resource
    Electronic Resource
    Water surface measurement in a shallow channel using the transmitted image of a grating (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 736-739 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this work, the measurement of the depth or shape of a shallow water channel using the transmitted image of a grating is discussed. A noncontact approach, using a simple optical system is described and the angle and depth of the refracting surface may thus be determined. Other applications include simulation of air flow in engineering systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141487
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  • 8
    Electronic Resource
    Electronic Resource
    p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 593-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependences of the hole concentration and Hall mobility in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy were measured by the van der Pauw method over a wide temperature range from 100 to 500 K. Assuming that the effective mass of holes in Al0.08Ga0.92N is equal to that of GaN, the activation energy of the Mg shallow acceptor in Al0.08Ga0.92N is estimated to be about 35 meV deeper than that in GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112309
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1377-1379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An AlGaN/GaInN heterostructure has been fabricated by metalorganic vapor phase epitaxy. We observed room-temperature (RT) violet stimulated emission from an optically pumped double heterostructure (DH) using GaInN as an active layer. The peak wavelength of the stimulated emission at RT from Al0.17Ga0.83N/Ga0.91In0.09N DH is 402.5 nm, and the threshold of excitation power density is about 0.13 MW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111942
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  • 10
    Electronic Resource
    Electronic Resource
    Uniform p-type impurity-doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1943-1945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity doping into a GaInP/AlGaInP multiquantum well (MQW) active layer is applied to suppress the occurrence of the ordered structure of column III elements. Calculation of the quantized energy level in an ordered and disordered GaInP quantum well (QW) shows that uniform p-type impurity doping into a MQW structure is more effective than modulation doping for shortening the lasing wavelength. The lasing wavelength of p-doped MQW lasers with a 3-nm-thick GaInP QW can be shortened to 633.2 nm at an output power of 2 mW at 20 °C. A maximum lasing temperature of 46 °C for a 630 nm band AlGaInP MQW laser with a cavity length of 450 μm is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106143
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