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  • 1
    Electronic Resource
    Electronic Resource
    Surface reaction of diiodomethane with an aluminum(111) surface (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 2637-2641 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100185a045
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  • 2
    Electronic Resource
    Electronic Resource
    Desorption of aluminum hydride from hydrogen adsorbed aluminum(111) surface (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 6-7 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100154a003
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  • 3
    Electronic Resource
    Electronic Resource
    Extraction of infrared radiation from SPring-8 : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1543-1546 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Extraction of infrared beams from SPring-8 storage ring is investigated. SPring-8 is a third generation insertion device oriented synchrotron radiation source in x-ray region. It is noticeable, however, that a highly powerful radiation source in infrared region can be obtained from the bending magnet because of the large bending radius of 40 m. In this wavelength region, SPring-8 storage ring has a very sharp natural collimation in the vertical direction and the source size is very small. Extraction of infrared radiation in wavelength of 2–25 μm was designed. Source is a bending magnet and a water-cooled copper mirror is incorporated into the crotch laid just downstream by the bending magnet. The design of crotch and the transport system is carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143016
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of the source size of gas-puff z-pinch plasmas using an inductive pulsed power system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4438-4444 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small scale inductive pulsed power (IPP) generator with copper wire fuses as an opening switch has been applied to an argon gas-puff z-pinch plasma which can be used as a point source for x-ray lithography. The IPP generator with fuses supplies a driving current of 60 kA in 400 ns to the z-pinch plasma. Without fuses, the generator serves as a conventional fast bank (FB) system which supplies z-pinch current of 60 kA in 4.5 μs. Characteristics of the z-pinch implosions in IPP and FB systems are investigated and compared. The result obtained shows that the intensity of soft x rays emitted from hot spots in both systems is decreased gradually with longer delay time, which is the time difference between energizing a gas-puff actuator and a primary current trigger. Dual axis pinhole imagery shows that the hot spot size is 0.8 mm in diameter in both systems. However, the average radial displacement of hot spots is 0.9 mm in the FB system and it is reduced to 0.4 mm in the IPP system. Optical framing camera images have confirmed that the radial distribution of hot spots is due to kink instability. The framing images also show that the imploding plasma in the FB system which has a pinch size of 2.2 mm in diameter can be further compressed to 1.3 mm. The IPP system can suppress the kink instability of pinch plasma and increases plasma column uniformity along the z axis. This suggests that the IPP system can improve the stability of the pinched plasma so as to minimize the end-on source size for x-ray lithography applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322576
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  • 5
    Electronic Resource
    Electronic Resource
    Reduction of defects in laser-induced crystallized and amorphized silicon films using plasma hydrogenation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357962
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  • 6
    Electronic Resource
    Electronic Resource
    SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110956
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  • 7
    Electronic Resource
    Electronic Resource
    A new technique for diagnostics of a radio-frequency parallel-plate remote plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new parallel-plate remote plasma reactor was developed, containing a metal grid between the powered and the grounded electrode. Plasma parameters between the grid and a substrate holder have been measured in radio-frequency (13.56 MHz) argon plasmas using another grid with large surface area as a positive electrostatic probe. The electron density is lower than 106 cm−3 at rf power lower than 10 W; this demonstrates that the plasma is effectively confined. The electron energy distribution function is well approximated to a Maxwellian one. The electron temperature decreases as the pressure increases, and it is lower than 3 eV at pressures above 13.3 Pa, in agreement with electron temperatures in conventional plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112659
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  • 8
    Electronic Resource
    Electronic Resource
    Etching of aluminum film by hydrogen atoms (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1793-1795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between hydrogen atoms and an ultrathin aluminum film (2 monolayer) on a Mo(111) substrate was studied by thermal desorption (TD) and Auger electron spectroscopy (AES). Through TD experiments for the hydrogen precovered aluminum films, desorption of aluminum hydride was observed at 370 K. It was confirmed that 1/3 monolayer of aluminum was desorbed as aluminum hydrides after a TD experiment for the aluminum film on which hydrogen was preadsorbed to a full monolayer coverage. The aluminum film was continuously etched at 410 K by a steady flow of hydrogen atoms. These results indicate the potential capability of hydrogen atoms as a selective etchant for aluminum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106203
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  • 9
    Electronic Resource
    Electronic Resource
    Use of long straight sections of SPring-8 : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 355-358 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SPring-8 project is in progress in Japan. The main facility is an 8 GeV storage ring dedicated to synchrotron radiation [H. Kamitsubo et al. (this conference)]. The main feature of the ring is in the free straight sections 30 m long. In this paper the design of the long straight sections and how to use them is described. The long free straights are achieved through two phases to make the commissioning of the ring smooth. In the second phase, the long free straight sections are available. These long straight sections have the following potential to realize (1) extremely high brilliance, (2) multiundulators with broadband, and (3) free electron lasers. The emittance of the stored electron beam can be reduced to subnano m rad at 4 GeV with damping wigglers. Three-order higher brilliance can be obtained around 4 keV. With these optics, three-dimensional simulation was performed for free electron lasers (FEL). The calculated gain was not so large in the practical peak current level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142754
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  • 10
    Electronic Resource
    Electronic Resource
    Generalized eruptive histiocytoma: a report of a variant case showing the presence of dermal indeterminate cells (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of cutaneous pathology 18 (1991), S. 0 
    Details
    ISSN: 1600-0560
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We describe a 14-year-old Japanese girl with a variant of generalized eruptive histiocytoma. She presented with the characteristic features of classical generalized eruptive histiocytoma but with the following minor differences. Clinically, some of the papular eruptions tended to coalesce to form plaques. Histoligically, some of the histiocytic cells were S-100 protein- and OKT-6-positive; these were thought to be indeterminate cells because they lacked Birbeck granules. In addition, PAS-positive cells were few and there were some intermingled lymphocytes and a few eosinophils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0560.1991.tb00141.x
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