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  • 1
    Electronic Resource
    Electronic Resource
    Gas source molecular-beam epitaxy of Si and SiGe using Si2H6 and GeH4 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas source molecular-beam epitaxy (MBE) has been studied as a low-temperature Si and SiGe epitaxial method. Specular single-crystalline silicon films were successfully grown by the gas source Si MBE technique at a substrate temperature of about 650 °C. N-type doping was carried out using PH3 gas as a dopant and the maximum electron concentration of 2.9x1019cm−3 was obtained. Furthermore, p-type doping using B2H6 gas was carried out for the first time and the maximum hole concentration of 9.5×1017cm−3 was successfully achieved. The SiGe alloy layer was also grown by the gas source MBE technique using GeH4 as a Ge source gas. The Ge concentration of the sample could be precisely controlled by the molar fraction of Ge in supply and it was increased up to 0.30 with increasing the gas ratio of GeH4 to Si2H6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347415
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  • 2
    Electronic Resource
    Electronic Resource
    Extremely low non-alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C-doped (1021 cm−3) p++GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8227-8232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistance ρc of non-alloyed ohmic metals (Mo/Au and WSix) to p-type GaAs is evaluated by transmission line method (TLM) patterns for various doping concentrations from 8×1018 to 1021 cm−3. The obtained specific contact resistance ρc, less than 10−8 Ω cm2, to metalorganic molecular beam epitaxy grown C-doped ( 1021 cm−3) GaAs is the lowest reported value. From the application point of view for the emitter electrodes of PNp type (two-dimensional electron gas base) heterojunction bipolar transistors, the specific contact resistance of a refractory metal, or the sputter-deposited WSix (x=0.45), is also studied. By reducing the growth temperature of molecular beam epitaxy from 600 to 450 °C and enhancing the As4/Ga flux ratio to 15, a nondiffusive heavily Be doped (1020 cm−3) GaAs is obtained. The specific contact resistance of the WSix to this sample is less than 10−6 Ω cm2. The obtained specific contact resistance can be well explained by a simple modeling based on the tunneling transport of light holes. Secondary ion mass spectroscopy analysis of the depth profile under heat acceleration shows a small diffusion of dopants for Be doped (1020 cm−3) GaAs and C-doped (1021 cm−3) GaAs. In addition, the specific contact resistance ρcISO of the isoheterojunction (p+GaAs/p+AlxGa1−xAs) is also evaluated by TLM patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347427
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  • 3
    Electronic Resource
    Electronic Resource
    Fast ignitor research at the Institute of Laser Engineering, Osaka University : The 42nd annual meeting of the division of plasma physics of the American Physical Society and the 10th international congress on plasma physics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2268-2274 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physics element relevant to the fast ignitor in inertial confinement fusion has been extensively studied. Laser-hole boring with enormous photon pressures into overcritical densities was experimentally proved by density measurements with XUV laser probing. Ultra-intense laser interactions at a relativistic parameter regime were studied with a 50-TW glass laser system and a 100-TW glass laser system synchronized with a long pulse laser system. In the study of relativistic laser beam propagation in a 100-μm scale-length plasma, a special propagation mode (super-penetration mode) was observed, where the beam propagated into overdense regions close to the solid target surface. At the super-penetration mode, 20% of the laser energy converted to energetic electrons toward the target inside, while the coupling efficiency was 40% without the long scale-length plasmas. The high-density energetic electron transport and heating of solid material was also studied, indicating beamlike propagation of the energetic electrons in the solid target and effective heating of solid density ions with the electrons. Based on these basic experimental results, the heating of imploded plasma by short-pulse-laser light with three different ways of injecting the heating pulse has been studied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352598
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  • 4
    Electronic Resource
    Electronic Resource
    Repetitive flash x-ray generator utilizing a simple diode with a new type of energy-selective function (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2343-2348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The construction and the fundamental studies of a repetitive flash x-ray generator having a simple diode with an energy-selective function are described. This generator consisted of the following components: a constant high-voltage power supply, a high-voltage pulser, a repetitive high-energy impulse switching system, a turbo molecular pump, and a flash x-ray tube. The circuit of this pulser employed a modified two-stage surge Marx generator with a capacity during main discharge of 425pF. The x-ray tube was of the demountable-diode type which was connected to the turbo molecular pump and consisted of the following major devices: a rod-shaped anode tip made of tungsten, a disk cathode made of graphite, an aluminum filter, and a tube body made of glass. Two condensers inside of the pulser were charged from 40 to 60 kV, and the output voltage was about 1.9 times the charging voltage. The peak tube voltage was primarily determined by the anode-cathode (A-C) space, and the peak tube current was less than 0.6 kA. The peak tube voltage slightly increased when the charging voltage was increased, but the amount of change rate was small. Thus, the maximum photon energy could be easily controlled by varying the A-C space. The pulse width ranged from 40 to 100 ns, and the x-ray intensity was less than 1.0 μC/kg at 0.3 m per pulse. The repetitive frequency was less than 50 Hz, and the effective focal spot size was determined by the diameter of the anode tip and ranged from 0.5 to 3.0 mm in diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141958
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  • 5
    Electronic Resource
    Electronic Resource
    Studies of ultra-intense laser plasma interactions for fast ignition : The 41st annual meeting of the division of plasma physics of the american physical society (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2014-2022 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser plasma interactions in a relativistic parameter regime have been intensively investigated for studying the possibility of fast ignition in inertial confinement fusion (ICF). Using ultra-intense laser systems and particle-in-cell (PIC) simulation codes, relativistic laser light self-focusing, super hot electrons, ions, and neutron production, are studied. The experiments are performed with ultra-intense laser with 50 J energy, 0.5–1 ps pulse at 1053 nm laser wavelength at a laser intensity of 1019 W/cm2. Most of the laser shots are studied under preformed plasma conditions with a 100 μm plasma scale length condition. In the study of laser pulse behavior in the preformed plasmas, a special mode has been observed which penetrated the preformed plasma all the way very close to the original planar target surface. On these shots, super hot electrons have been observed with its energy peak exceeding 1 MeV. The energy transport of the hot electrons has been studied with making use of Kα emissions from a seeded metal layer in planar targets. The details of ion acceleration followed by beam fusion reaction have been studied with neutron spectrometers. Laser ponderomotive force self-focusing and hot electron generation have been applied to a compressed core to see the effect of heating by injecting 12 beams of 100 ps, 1 TW pulses. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874023
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetotransport properties of MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6695-6697 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372811
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition: Optimization of growth parameters (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1529-1533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct-current plasma-enhanced chemical vapor deposition (CVD) with mixtures of acetylene and ammonia was optimized to synthesize aligned carbon nanotubes (CNTs) on Co- or Ni-covered W wires with regard to wire temperature, wire diameter, gas pressure, and sample bias. A phase diagram of CNT growth was established experimentally in this optimization process. It was revealed by transmission electron microscopy that Co-catalyzed CNTs encapsulated a Co carbide nanoparticle at their tip, disagreeing with a previous report that Co particles were located at the base of CNTs CVD grown on Co-covered Si substrates [C. Bower et al., Appl. Phys. Lett. 77, 2767 (2000)]. This leads to the conclusion that the formation mechanism of aligned CNTs depends significantly on the catalyst support material as well as the catalyst material itself. Since the sample bias strongly affected the morphology of CNTs, the selective supply of positive ions to CNT tips was possibly responsible for the alignment of growing CNTs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382848
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  • 8
    Electronic Resource
    Electronic Resource
    Disktron accelerator (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2466-2474 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of low-energy ion accelerator has been developed. It includes an eight-storied Disktron generator, newly developed accelerating tubes which hold up to 4 MV/m, both single and tandem acceleration capability, and a compound negative ion source. The Disktron generates 3.2 MV with a dummy load and 2.2 MV with ion beams, and has a voltage stability better than 10−3 at around 1 MV with a corona feedback stabilizer or a generating voltmeter feedback stabilizer only. The highly stabilized voltage of the Disktron has particularly been allowed to form an ion microbeam of about 1-μm diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143905
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  • 9
    Electronic Resource
    Electronic Resource
    Gonadotropin-releasing hormone stimulates phospholipase C but not protein phosphorylation/dephosphorylation in plasma membrane from human epithelial ovarian cancer (1993)
    238 Main Street, Cambridge, Massachusetts 02142, USA : Blackwell Scientific Publications
    International journal of gynecological cancer 3 (1993), S. 0 
    Details
    ISSN: 1525-1438
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In view of advances in treatment of certain hormone-dependent cancers with analogues of gonadotropin-releasing hormone (Gn-RH), this study was undertaken to establish the signal transduction events interacting with Gn-RH receptor in a cell-free system prepared from human ovarian mucinous cystadenocarcinoma samples. A high affinity specific binding (Kd=8 × 10−9 M) of [3H] Gn-RH was demonstrated in two from two plasma membrane preparations. Gn-RH showed no effects on the rate of protein phosphorylation from [γ-32P] adenosine triphosphate in the plasma membrane preparations. On the other hand, incubation of plasma membrane isolated form [3H]inositol-labeled specimens with Gn-RH in the presence of guanosine thiotriphosphate resulted in the rapid production of inositol phosphates. The Gn-RH effects was concentration-dependent, and half-maximal activation occurred with 1–3 nm Gn-RH. The Gn-RH-stimulated membrane event was observed in all plasma membrane isolations tested, but not in those from uterine endometrial carcinoma of a given case. These results provide the first direct evidence that Gn-RH receptor is coupled to phosphoinositide hydrolysis but not to certain membrane protein phosphorylation/dephosphorylation in ovarian carcinoma plasma membrane. Though the functional role of this event in human ovarian cancer is still obscure, it might be part of a possible point of attack for therapeutic approaches using Gn-RH analogues in this malignancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1438.1993.03050311.x
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  • 10
    Electronic Resource
    Electronic Resource
    Ultraviolet B radiation exerts enhancing effects on the production of a complement component, C3, by interferon-γ-stimulated cultured human epidermal keratinocytes, in contrast to photochemotherapy and ultraviolet A radiation that show suppressive effects (2000)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 142 (2000), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The present study was designed to investigate by using enzyme-linked immunosorbent assay and reverse transcriptase–polymerase chain reaction methods whether photochemotherapy (PUVA) or ultraviolet (UV) B treatment affects C3 production by interferon (IFN)-γ-stimulated keratinocytes cultured in serum-free medium. The results showed that PUVA and UVA reduced C3 production by IFN-γ-stimulated epidermal keratinocytes dose-dependently, although the effect of PUVA was stronger than that of UVA alone. Interestingly, UVB induced an enhancement of C3 production at doses ranging from 10 to 50 mJ cm−2. This phenomenon was found at both the protein and mRNA levels. In every experiment, changes in C3 mRNA levels preceded those in its protein levels. Reduced C3 production at higher doses of 75 and 100 mJ cm−2 were probably due to cytotoxic effects of UVB. In our experimental system, PUVA, UVA or UVB treatment did not affect C3 production without IFN-γ stimulation. Our results suggest that a reduction in C3 production by PUVA treatment may in part explain the efficacy of PUVA in the treatment of inflammatory dermatoses such as psoriasis, while the results of the UVB experiments may partially explain the proinflammatory nature of UVB.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03410.x
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