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  • 1995-1999  (13)
  • 1990-1994  (33)
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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the spatial laser intensity distribution on laser nitriding of iron (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 168-178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser nitriding of iron and other metals is governed by the complicated interplay of the laser–plasma–solid interactions which lead to a superposition of several mechanisms. This work reports on the drastic influence of the spatial laser intensity distribution on the nitriding process. The effects of the lateral laser intensity on the nitrogen lateral and depth profiles, the phase formation, the surface topology, and the microhardness are revealed by resonant nuclear reaction analysis, Mössbauer spectroscopy, surface profilometry, and nanoindentation. Homogeneous laser beams lead to a strong reduction or almost the absence of the piston mechanism, thus confining the nitriding and the transport processes to the laser spot and avoiding the fallout. The details are discussed in relation to the results obtained for the raw-beam irradiations. Much higher nitrogen saturation concentrations can be achieved with a homogenized beam, but the surface hardness and the hardening depth are lower than in the case of irradiation with the raw beam. The ε nitride is only found for raw-beam irradiation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370713
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  • 2
    Electronic Resource
    Electronic Resource
    Addendum: "Solid phase epitaxial regrowth in ion-beam-amorphized α quartz" [Appl. Phys. Lett. 73, 1349 (1998)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1922-1922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123961
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  • 3
    Electronic Resource
    Electronic Resource
    Material transport during excimer-laser nitriding of iron (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2907-2914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topology and nitrogen concentration profiles of iron irradiated with pulses of an excimer laser in a nitrogen atmosphere were studied by means of optical and scanning electron microscopy, surface profilometry, energy-dispersive x-ray spectroscopy, and resonant nuclear reaction analysis. The observations are combined to distinguish several mechanisms contributing to the material transport: ablation, redeposition of nitride from the plasma and pressure-induced lateral flow of the molten iron towards the edges of the laser spot (piston mechanism). Numerical estimates of the time and spatial evolution of temperature and pressure at the surface led to average rates of the material transport in good agreement with the experiment. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367116
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial regrowth of ion beam-amorphized α-quartz (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1349-1351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry. α-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500–900 °C. Complete epitaxial regrowth has been observed in the Cs-irradiated samples, after 875 °C annealing in air. On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated α-quartz could not be regrown up to 900 °C. The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122159
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  • 5
    Electronic Resource
    Electronic Resource
    Origin of nitrogen depth profiles after laser nitriding of iron (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 153-155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of its technological importance, the basic mechanisms of laser nitriding of metals and alloys are hardly understood. The nitrogen depth profiles achieved by laser nitriding of pure iron were measured with high accuracy by resonant nuclear reaction analysis and described by two superimposed diffusion profiles. Using simple estimates, together with the results of marker experiments and laser treatments in 15N-isotopically enriched atmospheres, the development of these profiles with the number of pulses can be simulated in excellent agreement with the experimental results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123136
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2903-2905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial α-quartz thin film could be a promising material for fabricating optical devices because of its unique optical and mechanical properties and processing advantages compared to bulk materials. This letter reports on the solid-phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates. This was achieved by high-dose Cs+-ion implantation and subsequent thermal annealing in air. Also, a thin amorphous layer produced by Si+-ion implantation on α-quartz was epitaxially regrown, thus indicating that the epitaxy is independent of the preparation history of the amorphous layer. The results are explained on the basis of network modifications induced by alkali and oxygen in the SiO2 structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125185
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  • 7
    Electronic Resource
    Electronic Resource
    Refinement of atomic positions in bixbyite oxides using perturbed angular correlation spectroscopy (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 165-169 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768192007742
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  • 8
    Electronic Resource
    Electronic Resource
    Refinement of atomic positions in bixbyite oxides using perturbed angular correlation spectroscopy. Erratum (1993)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 783-784 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768193005294
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  • 9
    Electronic Resource
    Electronic Resource
    Precision PAC measurements in Er2O3 and Ho2O3 single crystals and structure refinement (1994)
    Springer
    The European physical journal 93 (1994), S. 441-447 
    Details
    ISSN: 1434-6036
    Keywords: 61.10.My ; 61.66.Fn ; 76.80.+y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structure of C-form Ho2O3 and Er2O3 single crystals and powder samples was investigated by the electric quadrupole hyperfine interaction of111In(EC)111Cd probe ions using the perturbed γ-γ angular correlation method (PAC). The resulting set of refined atomic coordinates is compared to X-ray data and used to calculate the orientations of the electric field gradients (EFG) which are reproduced by the PAC measurements in single crystals. The temperature dependence of the coordinates was measured for both substances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01314248
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  • 10
    Electronic Resource
    Electronic Resource
    TheN=47 shell model nucleus90Tc (1994)
    Springer
    The European physical journal 349 (1994), S. 105-113 
    Details
    ISSN: 1434-601X
    Keywords: 21.10.Tg ; 21.60.Cs ; 23.20.Js ; 27.60.+j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Lifetimes of high spin states in the nucleus90Tc have been measured via the fusion evaporation reactions58Ni(36Ar,3pn)90Tc at 140 MeV and58Ni(35Cl,2pn)90Tc at 120 MeV beam energy. The OSIRIS spectrometer as well as a new neutron-γ-coincidence setup were used to measure lifetimes in the 10−12-10−9 s range by the recoil distance Doppler-shift method. By means ofγ-multiplicity and neutron-gated spectra fifteen lifetimes wered-educed. The experimental branching ratios and transition probabilities are compared to predictions of shell model calculations in a restricted π(p1/2), π(g9/2), ν(p1/2), and ν(g9/2) configuration space. In most cases the agreement with the calculations using the Gross-Frenkel parameters is striking but the results for several yrare states very sensitively depend on the residual interaction used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01291167
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