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  • 1
    Electronic Resource
    Electronic Resource
    Development of magnetization measurement under high pressure and pulsed high magnetic field (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2445-2447 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for measuring magnetization under high pressure and pulsed high magnetic field was developed for a Drickamer-type cell using diamond anvils and an insulator gasket. As the first test, the magnetization of invar alloy Fe0.65Ni0.35 was measured at room temperature up to 8 GPa in a pulsed field of 10 T with a width of 4 ms. The magnetization decreased with increasing pressure, indicating a transition to a paramagnetic state at 5–6 GPa, in accordance with the results of previous experiments using conventional methods such as ac susceptibility measurement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149774
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the thermal expansion of semiconductors CdIn2S4 and CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 732-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal expansion of the compound semiconductors CdIn2S4 and CdInGaS4 has been investigated on single crystals between 120 and 570 K. At high temperatures the anharmonic effects in lattice vibrations of the (parallel)c-axis direction in CdInGaS4 is similar to that in the ⊥c-axis direction, and that in CdIn2S4 is similar to that in CdInGaS4 in spite of the diverse crystal structures. The characteristic temperature (corresponding to Debye temperatures) for CdIn2S4 is 175±10 K, and for CdInGaS4 it is 200±10 K ((parallel)c axis) and 161±10 K (⊥c axis), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339755
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the optical absorption edge in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2065-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficients in Bi12SiO20 have been measured precisely at various hydrostatic pressures up to 40 kbar at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient (∂Eg/∂P)T of −1.20×10−6 eV/bar. Using the result of the pressure coefficient, it was indicated that the electron-phonon interaction was dominant in the temperature dependence of the indirect energy gap in Bi12SiO20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338006
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 434-436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in the semiconductor CdInGaS4 have been measured precisely at various hydrostatic pressures up to 20 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge is proportional to the inverse of hydrostatic pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338844
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2012-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in Bi12SiO20 have been measured precisely at various hydrostatic pressure up to 40 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the optical-absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge decreases with increasing pressure up to 10 kbar and then it shows constant value. The broad shoulders below 3.1-eV photon energy are shown, and the optical-absorption coefficients in those regions increase with increasing pressure up to 10 kbar.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339543
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction under ultrahigh pressure generated with sintered diamond anvils (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2201-2204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High pressures generated with sintered diamond as the second stage anvils in the "6-2 type'' double-stage apparatus have been calibrated by x-ray diffraction with synchrotron radiation. Sintered diamond has permitted a fair amount of x-ray transparency although the chemical analysis shows the existence of 14-wt. % Co binder. Anvils with a top face of 0.7 mm diam performed the generation of 60 GPa, which was confirmed on the lattice parameters of B1 and B2 phases of NaCl. No appreciable plastic deformation of the used anvils has certified the higher pressure generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337178
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  • 7
    Electronic Resource
    Electronic Resource
    Expanding Roles of Computers and Robotics in Biological Macromolecular Research (1989)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biophysics and Biomolecular Structure 18 (1989), S. 1-24 
    Details
    ISSN: 0084-6589
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.bb.18.060189.000245
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  • 8
    Electronic Resource
    Electronic Resource
    Synchrotron-radiation study of phase transitions in phosphorus at high pressures and temperatures (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 406-410 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Results are reported of an investigation using synchrotron radiation into the effects of temperatures up to 1173 K on pressure-induced phase transitions in phosphorus. A cubic type multi-anvil press was employed and a diffraction pattern in an energy-dispersive mode was taken for a period of time, typically 200 s, without suffering from a deterioration of the sample material. The pressure of the first transition, orthorhombic–rhombohedral (As-type), decreases with increasing temperature at a rate of 2.3 MPa K−1 and the As-type structure is stable at a pressure as low as 2.6 GPa at a temperature of 1073 K. The volume discontinuity at the transition, ΔV, is 10% at room temperature and remains almost unchanged with increasing temperature. The axial ratio c/a, when the rhombohedral structure is referred to the hexagonal system, changes mostly with pressure but only slightly with temperature, approaching √6 = 2.45 on going to the second transition, rhombohedral–simple cubic. The pressure of this transition, in contrast to the first one, is independent of temperature but ΔV at this transition, 3.7%, continuously decreases with increasing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889887086394
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of CuIn5S8 single crystals (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    Details
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457879
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  • 10
    Electronic Resource
    Electronic Resource
    A case of dorsal dislocation of the proximal interphalangeal joint of the fourth toe (1996)
    Springer
    Archives of orthopaedic and trauma surgery 115 (1996), S. 59-60 
    Details
    ISSN: 1434-3916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Dislocation of the interphalangeal joint of a toe is a rare injury, and when it does occur it usually involves the great toe. Dislocation of other toes without fracture is quite rare. We present here a case of dorsal dislocation of the proximal interphalangeal (PIP) joint which was reduced by manipulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00453220
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