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Temperature dependence of the thermal expansion of semiconductors CdIn2S4 and CdInGaS4 (1987)

Toyoda, T. ; Irie, T. ; Endo, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 732-734

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The thermal expansion of the compound semiconductors CdIn2S4 and CdInGaS4 has been investigated on single crystals between 120 and 570 K. At high temperatures the anharmonic effects in lattice vibrations of the (parallel)c-axis direction in CdInGaS4 is similar to that in the ⊥c-axis direction, and that in CdIn2S4 is similar to that in CdInGaS4 in spite of the diverse crystal structures. The characteristic temperature (corresponding to Debye temperatures) for CdIn2S4 is 175±10 K, and for CdInGaS4 it is 200±10 K ((parallel)c axis) and 161±10 K (⊥c axis), respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339755

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