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  • 1995-1999  (8)
  • 1985-1989  (8)
  • 1980-1984  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Optimization of island size in single electron tunneling devices: Experiment and theory (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2830-2836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the influence of island size on the operation of single electron tunneling (SET) devices. The self-heating, self-capacitance, and charge noise have been determined for six SET transistors with island sizes varying from 0.17×0.17 μm2 to 5×5 μm2. The I–V characteristics of these devices can be well fit to a model where the heat flow from the device is limited by the electron-phonon coupling. The best fit to this model was obtained with an electron-phonon coupling parameter of Σ=0.3×109 W K−5 m−3. We have found a clear indication that the charge noise of our SET transistors, which are fabricated with the usual techniques, increases with increasing island size. These results have been used to estimate the thermal error of a single electron turnstile assuming that self-heating and charge noise in the turnstile are the same as in our SET transistors. The accuracy of the turnstile is dramatically reduced by the self-heating and the charge noise. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360083
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thin-film growth of the charge-density-wave oxide Rb0.30MoO3 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3823-3825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the thin-film fabrication of a charge-density wave (CDW) compound. Single-phase epitaxial films of the model CDW oxide Rb0.30MoO3 have been grown by pulsed-laser deposition. Detailed analyses show that the Rb0.30MoO3 films have μm-size grains with the CDW chains oriented parallel to the substrate. On SrTiO3 (510), the CDW chains align into a single direction within the film plane. The electrical resistance of the films demonstrates a CDW state below about 182 K. Structures patterned in films will permit unprecedented studies of phase-coherent CDW transport, as well as the exploration of devices based on CDWs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116629
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Mass-spectrometer-controlled fabrication of Si/Ge superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1005-1007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a quadrupole mass spectrometer to control deposition rates during fabrication of compositionally modulated Si/Ge superlattices. Its performance has been evaluated by an x-ray diffraction study of a superlattice. The variation of the Si deposition rate was less than 3% during the whole deposition time of 30 min. This proves that a mass spectrometer can be successfully employed as rate monitor in Si molecular beam epitaxy systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99227
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3043-3050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model, based on energy considerations, to determine the critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices is introduced. Comparison with experiments shows a good agreement between the theory and experiment. It is also shown that in films which are initially dislocation-free, the energy barrier for the nucleation of dislocation loops can be crossed by thermal activation if the film is thicker than the critical value provided by the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341568
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Rate control for electron gun evaporation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1177-1183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Principles for obtaining high-quality rate control for electron gun evaporation are discussed. The design criteria for rate controllers are derived from this analysis. Results are presented which have been obtained with e-guns whose evaporation rate is controlled by a Wehnelt electrode or by sweeping of the electron beam. Further improvements of rate stability can be obtained by improved design of e-guns and power supplies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140282
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Cryogenic current comparator with increased resolution (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 624-626 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High resolution in a cryogenic current comparator (CCC) can be attained with an unmodified commercial SQUID by involving geometrical aspects in the design considerations. A description of a CCC is given whose measured sensitivity (one flux quantum φ0 per 2.7-μA turn) agrees well with the calculated value, being high enough to meet the requirements for high-precision measurements of the quantized Hall resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139845
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Low 1/f normal-state resistance noise in high-resistivity YBa2Cu3Oy films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 133-135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured 1/f resistance noise at room temperature in laser-ablated YBa2Cu3Oy (YBCO) thin films over a wide range of normal-state resistivities. Surprisingly, the high resistivity films exhibit lower normalized noise powers than the low resistivity films. The lowest normalized noise power is 100 times lower than any previously reported values for single crystals of YBCO and is comparable to the lowest noise levels found in other cuprates. Upon oxygen reduction, the noise power in the high resistivity films increases monotonically whereas it decreases in the low resistivity films. We conclude that the high noise level in YBCO is most likely intrinsic to the structure and due to conduction along the Cu-O chains. Therefore, the low noise power in high resistivity films appears to indicate a degraded chain conductivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115507
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of multilayer single-electron tunneling devices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 305-307 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable process has been developed for the fabrication of multilevel single-electron tunneling (SET) devices. Using this process, we have fabricated SET devices with Au-SiO-Al and Al-AlOx-SiO-Al overlap capacitors. The SET transistors exhibit voltage gain and, despite the complex device structure, have a low charge noise (7×10−5e/(square root of)Hz). Moreover, the use of overlap capacitors in SET devices results in a reduction of cross capacitances down to 8%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113526
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  • 9
    Electronic Resource
    Electronic Resource
    Broadband single-electron tunneling transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115622
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  • 10
    Electronic Resource
    Electronic Resource
    Negative differential resistance due to single-electron switching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1042-1044 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123449
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    Paper (German National Licenses)
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