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  • 1995-1999  (103)
  • 1985-1989  (18)
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  • 1
    Electronic Resource
    Electronic Resource
    1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5203-5206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371501
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  • 2
    Electronic Resource
    Electronic Resource
    Two- and three-body forces in the interaction of He atoms with Xe overlayers adsorbed on (0001) graphite (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6477-6493 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In order to address the problem of three-body interactions in gas–surface scattering, we considered the collision of a He atom with the (0001) surface of graphite coated by a monolayer of Xe. To eliminate the uncertainties connected with errors in the two-body He–Xe interaction, we determined the latter by crossed-beam differential collision cross-section measurements performed at two energies (67.2 and 22.35 meV). These scattering data together with room-temperature bulk diffusion data are then fitted with a Hartree–Fock–dispersion–type function to yield an interaction potential that explains most of the properties of this system within the experimental errors and represents an improvement on previously published He–Xe potentials. Helium diffraction measurements are then carried out from the Xe overlayer and the dependence of the specular intensity from the angle of incidence is carefully determined. Further, a He–surface potential is constructed by adding together the following terms: (1) the He–Xe pairwise sum, (2) the long-range He–(0001)C interaction, (3) the three-body contribution generated by the Axilrod–Teller–Muto term, (4) the so-called surface-mediated three-body interaction He–Xe–(0001)C first considered by A. D. McLachlan [Mol. Phys. 7, 381 (1964)], and finally (5) a small correction which is meant to take into account the nonstationary nature of the surface. Using this potential, well-converged close-coupling scattering calculations are carried out, and their results compared with the data. In general, good agreement is obtained. The agreement can, however, be improved by (a) an increase of about 30% in the contribution of three-body forces, (b) the lowering of the He–graphite long-range attraction coefficient by about 15%, or (c) a reduction of the two-body interaction well depth of 1.6% (the experimental error) together with any combination of the factors under (a) and (b) reduced by an adequate amount. Elimination of the contribution of the graphite surface by studying Xe multilayers is hindered by the uncertainties in the "thermal correction'' [point (5) above] which, due to the multilayer increased "softness,'' becomes an appreciable source of uncertainty.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457364
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  • 3
    Electronic Resource
    Electronic Resource
    Raman spectrum of carbonaceous material: a possible metamorphic grade indicator for low-grade metamorphic rocks (1996)
    Oxford : Blackwell Science Ltd
    Journal of metamorphic geology 14 (1996), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Raman spectral analyses of carbonaceous material (CM) extracted from pelitic samples along two sections traversing the metamorphic belt of Taiwan were carried out in the present study. The results show similar spectral variations of CM with metamorphic grade as those documented in the literature. However, continuous sampling from zeolite facies through prehnite–pumpellyite facies to greenschist facies metamorphic rocks in the present study does reveal some interesting features on the Raman spectra of CM that were not noted before. Both the Raman D (disordered-)/O (ordered-) peak area (i.e. integrated intensity) ratio and the D/O peak width (i.e. full width at half maximum, FWHM) ratio of the CM decrease with progressive metamorphism, but the most prominent change in the D/O peak area ratio occurs in samples of lower greenschist facies metamorphic grade, while the most significant decrease in the D/O peak width ratio occurs in samples near the boundary of prehnite–pumpellyite facies and greenschist facies. This phenomenon is interpreted as a result of the decoupling of the changing rates of in-plane crystallite size and degree of defects of CM with progressive metamorphism. It is postulated that the Raman spectrum of CM can serve as a metamorphic grade indicator to distinguish samples of prehnite–pumpellyite facies metamorphic grade from those of greenschist facies metamorphic grade.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.1996.05792.x
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  • 4
    Electronic Resource
    Electronic Resource
    Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1073-1077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the "atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360896
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  • 5
    Electronic Resource
    Electronic Resource
    A new algorithm of quantitative texture analysis adapted to thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7376-7378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new algorithm of quantitative texture analysis, i.e., a modified maximum entropy method, was applied to the texture analysis of polycrystalline thin films. The algorithm program suitable for determining the inverse pole figure of polycrystalline thin films with hexagonal structure was developed and is illustrated with an example of Zn film deposited on Fe substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362700
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  • 6
    Electronic Resource
    Electronic Resource
    Spin polarized photoemission studies of the 3s core level in ferromagnetic systems (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6507-6508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin polarized core level photoemision studies are capable of providing local site specific magnetic information. 3s core level photoemission spectra are characterized by a main peak and satellite whose separation reflects the exchange interaction between the core level and the net spin in the valence bands. However, there is currently considerable disagreement as to whether the splitting between these two peaks may be taken as a measure of the local moment. An alternative approach is to examine the intensities of the different peaks in the spectra. Indeed analysis of the multiplet intensities in the final state suggests that it should be possible to obtain a reasonable measure of the local magnetic moment through measurement of the spin dependent intensities in the multiplet structure. In detailed spin polarized photoemission studies of the 3s core level of Fe and Co films grown on Ag(001) and Cu(001) substrates, respectively, we find that this is indeed the case. This suggests that studies of the spin polarization of the 3s core level photoemission may provide an important new technique for the measurement of magnetic moments in thin films. Lineshape fitting reveals new information about the lifetime of the core holes. Previous studies have suggested that a majority spin core hole will be shorter lived than a minority spin core hole because of the higher density of majority spin electrons in the valence bands. However, our studies indicate that the lifetime is more complicated and that it shows a strong dependence on the LS in the final state. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362696
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  • 7
    Electronic Resource
    Electronic Resource
    Differential gain in coupled quantum well lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2962-2969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we examine the effect of coupling between the wells on the differential gain. We find, as for the gain peak, the differential gain at the gain peak is not a monotonic function of the barrier thickness. For relatively thick barriers inclusion of coupling reduces the differential gain but as the barrier gets thinner the differential gain can be significantly enhanced or suppressed. We also compare our calculations with those for single quantum well to show how the enhancement in differential gain in the multi quantum well laser, due to reduced state filling and higher modal gain is affected by well coupling. Without losing generality, the model assumes the quantum well region to be electric field free. Numerical examples are presented for a GaAs/Al0.2Ga0.8As double quantum well system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360043
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  • 8
    Electronic Resource
    Electronic Resource
    Energy relaxation processes of hot quasi-two-dimensional excitons in very thin GaAs/AlGaAs quantum wells by exciton–acoustic-phonon interaction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 424-426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rising time of the excitonic luminescence in GaAs/AlGaAs quantum wells is studied as a function of the well width. For well thickness below approximately 20 A(ring), we find an increase of rising time with decreasing well width. We explain the dependence of the rising time on well width in very thin quantum wells by the slow-down energy relaxation and/or exciton migration processes due to the decrease of the scattering rate of the exciton–acoustic-phonon interaction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360847
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  • 9
    Electronic Resource
    Electronic Resource
    Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1904-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self-consistent modeling, provide insights into the internal operating mechanisms of the laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363005
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  • 10
    Electronic Resource
    Electronic Resource
    Formation of supersaturated solid solutions in the immiscible Ni–Ag system by mechanical alloying (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3935-3945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical alloying process in the immiscible Ni–Ag system with a positive heat of mixing was investigated by x-ray diffraction and differential scanning calorimetry. High energy ball milling of mixed elemental powders, with nominal composition NixAg100−x (x=95, 90, 70, 50, and 30), results in the formation of mixtures of supersaturated, nanocrystalline Ni-rich and Ag-rich solid solutions. The solubilities and final grain sizes of these phases depend on the nominal composition of the powder. The maximum solubilities were determined using Vegard's law to be 4.3 at. % Ni in Ag and 6.6 at. % Ag in Ni for samples milled at room temperature. The effect of milling temperature on mechanical alloying was examined in the range −195 to 250 °C. Lower temperature milling leads to a larger solubility of Ni in the Ag-rich samples, up to 7.1 at. % for the Ni30Ag70 composition. Indications for the existence of a concentrated solid solution (Ni36Ag64-Ni44Ag56) were also found. Milling at higher temperatures leads to lower solubilities. A study of the thermal stability of supersaturated Ag-rich and Ni-rich phases shows that milling at high temperature can be understood in terms of a competition between mechanical mixing and thermal decomposition. At room temperature, nonequilibrium vacancies are responsible for decomposition. The results give new insight into the general characteristics of the mechanical alloying process in thermodynamically unstable systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361820
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