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  • 1995-1999  (40)
  • 1980-1984  (13)
  • 1975-1979  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of carrier transport through a silicon-oxide layer for 〈indium-tin-oxide/silicon-oxide/silicon〉 solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3931-3939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of carrier transport through a thin silicon-oxide layer for 〈spray-deposited indium-tin-oxide (ITO)/silicon-oxide/Si〉 solar cells has been studied by measurements of the dark current density as a function of the thickness of the silicon-oxide layer, together with the observation of transmission electron micrographs. Cross-sectional transmission electron micrography shows that a uniform silicon-oxide layer with the thickness of ∼2 nm is present between ITO and Si when the ITO film is deposited on a flat Si(100) surface at 450 °C. The dark current density under a depletion condition strongly depends on the thickness of the silicon-oxide layer. It is concluded from these results that quantum mechanical tunneling is the dominant mechanism for the charge carrier transport through the silicon-oxide layer. On the other hand, when the ITO film is deposited on a mat-textured Si surface at the same temperature, a nonuniform silicon-oxide layer is formed, with ITO penetrating into the silicon-oxide layer in the top and valley regions of the pyramidal structure. By raising the deposition temperature of the ITO film on the flat Si(100) surface to 500 °C, the silicon-oxide layer becomes also nonuniform. For these diodes with the nonuniform silicon-oxide layer, the carrier transfer probability is less dependent on the thickness of the silicon-oxide layer, leading to the conclusion that minute channels of ITO are present in the silicon-oxide layer and charge carriers transfer through the channels. The photovoltage is decreased by the presence of the minute channels, with its magnitude depending on the density of the channels. The conversion efficiency of the 〈ITO/silicon-oxide/n-Si(100)〉 solar cells is unchanged upon illumination for 1000 h. The good cell stability is attributed to the well-crystallized ITO film which effectively suppresses diffusion of oxygen from the air and to low reactivity of ITO with Si at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359912
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  • 2
    Electronic Resource
    Electronic Resource
    Zinc oxide/n-Si junction solar cells produced by spray-pyrolysis method (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1301-1307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc oxide (ZnO)/n-Si junction solar cells were fabricated by a spray-pyrolysis method and high short-circuit photocurrent densities and relatively high photovoltages were obtained by adjusting the conditions of the deposition and the post-deposition heat treatment. Consequently, relatively high conversion efficiencies ranging between 6.9% and 8.5% were obtained. The efficiency of the solar cells with ZnO/n-Si structure decreases slowly with time when they are kept in air in the dark because of the increase in the thickness of the silicon oxide layer between Si and the ZnO film. This degradation can be avoided by forming an indium-tin-oxide (ITO) overlayer on the ZnO film, indicating that the silicon oxide layer grows through the reaction of Si with oxygen diffusing from the atmosphere, not with ZnO. The efficiency of the ZnO/n-Si junction solar cells decreases rapidly with the illumination time. Capacitance-voltage measurements show that this degradation is caused by a decrease in the work function of the ZnO film. The decrease in the work function is caused by desorption of O−2 from the grain boundaries of the ZnO films. When incident light contains no ultraviolet (UV) component, this degradation does not occur, indicating that the desorption is caused by the acceptance of holes generated by UV light. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358932
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  • 3
    Electronic Resource
    Electronic Resource
    7000 h continuous wave operation of multiple quantum well laser on Si at 50 °C (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1614-1615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 1.55 μm multiple quantum well laser heteroepitaxially grown on Si substrate operates under the severe aging condition of the light output of 5 mW/facet at 50 °C. The laser has been operating for more than 7000 h. The threshold current and the slope efficiency of the laser on Si at 20 °C are 32 mA and 0.19 W/A, respectively. The maximum operation temperature is above 80 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118632
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  • 4
    Electronic Resource
    Electronic Resource
    Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6725-6728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368999
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  • 5
    Electronic Resource
    Electronic Resource
    Behavior of electromigration-induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1066-1068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed the detailed behavior of electromigration-induced gaps (voids that cause an open circuit) in a submicron-wide Al line layered on a Ti/TiN conductor by in situ sideview transmission electron microscopy. Two types of gaps were observed. The first type is characterized by extensive growth, which may make the Ti/TiN shunt ineffective under use conditions. The gap causes a decrease in the Al drift velocity upstream in the electron flow. This decrease probably results from mass transport through the exposed TiN surface into the gap. The second type of gap did not grow and later healed; therefore, the shunt seems to be effective. The gap had little influence on the drift velocity. Mass was transported directly from the cathode-side Al segment through the gap to the anode-side segment. These mass transport processes may be the causes of resistance oscillation in layered lines. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115714
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  • 6
    Electronic Resource
    Electronic Resource
    EFFECTS OF DRAWING STRAIN AND BLUING ON THE FATIGUE STRENGTH OF EUTECTOID STEEL WIRES (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— The effects of bluing, associated with drawing strain, on the fatigue strength of eutectoid steel wires have been investigated. The fatigue limit increases by bluing and the increase is more significant with higher drawing strain. The peak in the fatigue limit with regard to the drawing strain in the wires, at a strain of 2.5, disappears after bluing. On the other hand, in the ferritic steel wires investigated for comparison, the fatigue limit gradually increases with the drawing strain up to 7.7. Furthermore, no appreciable change in the fatigue limit due to bluing is found. Based on the results of hardness tests on fatigue specimens with- and without-bluing, it is deduced that the decrease of the fatigue limit beyond the peak drawing strain in the eutectoid steel wire can partly be attributed to insufficient locking of the high-density dislocations by solute atoms. The effect of relaxation of residual stress during bluing is also briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb01520.x
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  • 7
    Electronic Resource
    Electronic Resource
    Size Dependent Fluorescence Quenching of CdS Nanocrystals Caused by TiO2 Colloids as a Potential-Variable Quencher (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 4283-4287 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00011a019
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  • 8
    Electronic Resource
    Electronic Resource
    New series of superstructures based on a clinopyroxene. II. The structure of the Sc series of enstatite-IV, [Mg(̃x−7.5)/3Sc3̃][Mg2/3Si(x−4)/3]Ox, with x = 100, 112 or 124 (1984)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 40 (1984), S. 126-132 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768184001865
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  • 9
    Electronic Resource
    Electronic Resource
    The structure and polytypes of α-CaSiO3 (pseudowollastonite) (1981)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 37 (1981), S. 1010-1017 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567740881004962
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  • 10
    Electronic Resource
    Electronic Resource
    Electrochromic properties of the n-heptyl viologen-ferrocyanide system (1984)
    Springer
    Journal of applied electrochemistry 14 (1984), S. 323-327 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract Electrochromic properties of the mixed solution of n-heptyl viologen dibromide (HV), Fe(CN) 6 4− and NaH2PO2 or KBr were investigated by cyclic voltammetry and the transparency-time relation. When Fe(CN) 6 4− is added to a HV solution the mixture colours violet without inputting any voltage. However, the colour fades gradually by further addition of NaH2PO2, and the transparency of the mixture increases with addition of larger amounts of NaH2PO2. The same effect was observed by addition of KBr to the HV-Fe(CN) 6 4− solution. The input voltage required for the electrochromism of HV is lowered considerably by addition of Fe(CN) 6 4− , when NaH2PO2 or KBr plays a role in controlling the colouringerasing phenomena. The HV-Fe(CN) 6 4− -KBr system showed some HV ‘residue’ in the cyclic voltammogram on an indium-tin oxide (ITO) electrode, while no such HV ‘residue’ was observed in the HV-Fe(CN) 6 4− -NaH2PO2 system. The HV-Fe(CN) 6 4− -NaH2PO2 system is superior in colouring-erasing reproducibility and in response time to the HV solution or the HV-Fe(CN) 6 4− system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01269932
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