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  • 11
    Electronic Resource
    Electronic Resource
    Determining effective dielectric thicknesses of metal-oxide-semiconductor structures in accumulation mode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1638-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor (MOS) capacitance–voltage (C–V) characteristics in the accumulation mode have been measured and simulated for polycrystalline Si gate MOS capacitors with various oxide thicknesses (40–200 A(ring)) on p-type (100) Si substrates. The discrepancy between experimental data and theoretical prediction by classical MOS theories is clarified by taking quantization effects into account. The experimentally determined "effective dielectric thicknesses'' in the semiconductors are found to be in good agreement with the values calculated from quantization effects for MOS capacitors with thinner oxides (〈80 A(ring)). The effective dielectric thicknesses at oxide electric fields of 2–6 MV/cm have been determined to be 2–3 A(ring) larger for the quantum mechanical case than for the classical case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113877
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  • 12
    Electronic Resource
    Electronic Resource
    Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High (2 eV) and low kinetic energy supersonic jets of disilane as well as ultrahigh vacuum chemical vapor deposition have been employed to grow epitaxial silicon thin films on Si(100) wafers at temperatures ranging from 500 to 650 °C. The growth properties and film uniformity are compared in order to characterize the high energy technique. High translational energy disilane supersonic jets increase the efficiency of deposition by increasing the disilane reaction probability. The growth profiles from the high energy jet are sharply peaked due to a focusing of the precursor along the jet centerline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114822
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  • 13
    Electronic Resource
    Electronic Resource
    Metastability and switching in the vortex state of 2H-NbSe2 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 126-128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: History-dependent metastable states with different bulk properties are formed in the vortex state of the type-II superconductor 2H-NbSe2. Magnetic measurements demonstrate the difference between the shielding responses of a field- and a zero-field-cooled state, and provide a procedure for switching the system from one state to the other. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123139
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  • 14
    Electronic Resource
    Electronic Resource
    Effects of oxidation process on interface roughness of gate oxides on silicon: X-ray reflectivity study (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 433-435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effects of the wet and dry oxidation processes on the interfacial roughness and time dependent dielectric breakdown (TDDB) characteristics of the poly-Si/SiO2/Si(100) trilayer. The interface roughness of the oxide layers buried under a thick poly-Si electrode has been investigated using an x-ray reflectivity technique. Analysis of x-ray reflectivity data for the trilayer samples and for a bare oxide film shows that interface roughness of poly-Si electrode/SiO2 interfaces depends on oxidation process while oxide layers have smooth SiO2/Si-subtstrate interfaces. TDDB of the SiO2 layer has also been observed to depend on the oxidation process, indicating that the interface roughness is a crucial factor affecting the TDDB characteristics. The wet oxidized SiO2 film is more stable to dielectric breakdown and has smoother interfaces than the dry oxidized sample. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120780
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  • 15
    Electronic Resource
    Electronic Resource
    Role of silicon surface in the removal of point defects in ultrashallow junctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2228-2230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of the Si surface in the annihilation of point defects has been studied for ultrashallow p+/n junctions. The dopant and defect distributions for low-energy implants lie within a few hundred angstroms of the surface. The proximity of the Si surface has been shown to help in the efficient removal of point defects for the shallower junctions. A 5 keV, 1×1015 cm−2 BF2 implant and a 30 keV, 3.3×1014 cm−2 BF2 implant were estimated to create comparable damage at different depths. After identical anneals, the higher-energy implant sample showed end-of-range dislocation loops in cross-sectional transmission electron microscopy analysis, while the low-energy sample, for which the point defect distribution was closer to the surface, was defect free. This is attributed to the role of the Si surface as an efficient sink for the removal of point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117136
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  • 16
    Electronic Resource
    Electronic Resource
    Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2076-2078 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123762
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  • 17
    Electronic Resource
    Electronic Resource
    Molybdenum contamination in low-temperature epitaxial silicon films grown by remote plasma chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 109-111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum is a material commonly used in ultrahigh vacuum silicon processing systems. This letter shows that even at temperatures as low as 500 °C, the presence of Mo in contact with silicon during processing can, under certain circumstances, lead to Mo contamination of the silicon. MOS capacitors were fabricated on epitaxial silicon films grown at ∼500 °C by remote plasma chemical vapor deposition. The wafers were mounted on metal pucks made of either molybdenum or steel during the epitaxial growth process. Capacitor results of the Mo puck-mounted wafers showed low minority carrier lifetimes and trapping ledges in the I–V plots, problems which were absent when steel pucks were used. Structural defects and plasma-induced sputtering were ruled out and secondary ion mass spectroscopy (SIMS) analysis verified the presence of Mo in the wafers, confirming that Mo contamination from the puck during epitaxial growth was responsible for the poor electrical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118090
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  • 18
    Electronic Resource
    Electronic Resource
    Evolution of subsurface hydrogen from boron-doped Si(100) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2184-2186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of atomic hydrogen with boron-doped Si(100) were studied using temperature programmed desorption (TPD). In addition to adsorbing at surface sites, hydrogen penetrates into boron-doped Si(100) samples and gets trapped by forming subsurface boron–hydrogen complexes. H2-TPD spectra, taken after exposure to atomic hydrogen, showed, in addition to the well known dihydride (680 K) and monohydride (795 K) desorption features, two peaks at 600 and 630 K due to decomposition of subsurface boron–hydrogen complexes. Increasing total hydrogen uptake with increasing dosing temperature (1.7 ML at 300 K, 4.2 ML at 500 K), suggests an activation barrier for subsurface hydrogen uptake. A quantitative correlation between boron concentration and subsurface hydrogen uptake is shown. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119375
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  • 19
    Electronic Resource
    Electronic Resource
    Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of different chemical mechanisms for adsorption, which depend on the incidence energy of disilane, on the film morphology is investigated by comparing deposition by high (∼2 eV) kinetic energy disilane jets, direct chemisorption; low (∼0.09 eV) kinetic energy disilane jets and ultra high vacuum chemical vapor deposition, trapping-mediated chemisorption. For substrate temperatures of 500–550 °C the mechanism for adsorption does not influence the film morphology as observed for films up to 3300 A(ring) thick, which are comparable in smoothness to the starting substrate, as determined by atomic force microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117074
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  • 20
    Electronic Resource
    Electronic Resource
    The dependence of ultrashallow junction depths on impact dose rates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1223-1225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115014
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