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  • 1
    Electronic Resource
    Electronic Resource
    Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7−x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5058-5061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We communicate a detailed study of the epitaxial growth of CeO2 on MgO. The key feature of the growth is the dependence of the in-plane orientation of the CeO2 epitaxial layer on the MgO surface morphology. Atomic force microscopic (AFM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of CeO2 on MgO occurs while on smooth substrates the CeO2 unit cell is rotated around the surface normal by 45° with respect to the MgO unit cell when the deposition rate is low (∼0.3 A(ring)/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45° grain boundaries in the CeO2 layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45° grain boundaries may be used to fabricate YBa2Cu3O7−x Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359734
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3337-3339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5×10−1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x-ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101](parallel)MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361234
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4681-4683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN layers were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Crystal quality was assessed by atomic force microscopy and high resolution x-ray diffraction. The III/V ratio and the growth temperature, rather than thickness and growth rate, are found to be critical parameters to achieve good quality AlN layers. III/V ratios close to stoichiometry, and high growth temperatures (≥900 °C) lead to optimal AlN layers. The growth rate is barely modified when growth temperature changes from 780 to 920 °C, but the growth mode and surface roughness are strongly affected. Optimal AlN layers have full-widths at half-maximum values of 10 arcmin, and an average surface roughness of 48 Å. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366208
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  • 4
    Electronic Resource
    Electronic Resource
    High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 762-764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal–semiconductor–metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were 〈10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10−24 A2/Hz) up to 5 V, for the undoped GaN MSM detector. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123303
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  • 5
    Electronic Resource
    Electronic Resource
    Band-gap narrowing and potential fluctuation in Si-doped GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122964
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  • 6
    Electronic Resource
    Electronic Resource
    High-quality visible-blind AlGaN p-i-n photodiodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1171-1173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and characterization of AlxGa1−xN p-i-n photodiodes (0≤x≤0.15) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible rejection of six orders of magnitude with a cutoff wavelength that shifts from 365 to 338 nm. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances, the transient response becomes non-exponential, with a decay time longer than the RC constant. This behavior is justified by the strong frequency dependence of the device capacitance. By an admittance analysis, we conclude that speed is not limited by deep levels, but by substitutional Mg capture and emission time. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123960
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  • 7
    Electronic Resource
    Electronic Resource
    Photoconductor gain mechanisms in GaN ultraviolet detectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 870-872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119673
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  • 8
    Electronic Resource
    Electronic Resource
    Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 620-622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of ArF excimer laser irradiation on silicon single crystals in air have been studied. The etch rate versus fluence curve shows three well defined zones, with very different etch rates and dependences. In the intermediate zone (from 1.5 to 2.5 J/cm2), narrow (1–2 μm diameter) and tall columns (3–30 μm) start to grow after irradiation with some hundreds of laser pulses. These whiskerlike columns, with height between one and two orders of magnitude higher than the depth of the crater, have not been formed by preferential etching of the surrounding material, but through hydrodynamical processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117926
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  • 9
    Electronic Resource
    Electronic Resource
    ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1048-1050 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yittria-stabilized zirconia films have been deposited on Si(100) substrates by ArF (193 nm) and KrF (248 nm) laser ablation. By using KrF radiation, high-quality (h00) epitaxial films are obtained on bare silicon. Epitaxy, although with slightly worse properties, is also obtained on substrates covered with a native oxide. Films have been deposited by ArF laser ablation over a wide range of substrate temperature and oxygen partial pressure and with variation in substrate surface cleaning. These films are polycrystalline and texture or epitaxy have not been obtained in any case. These results reveal that laser wavelength is a crucial factor in determining film properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116244
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the progressive growth of columns by excimer laser irradiation of silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3303-3305 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mechanism of columns produced by excimer laser irradiation of a silicon target is investigated. The micrometric columns are formed by a cumulative process with well-defined steps. The first steps lead to silicon hillocks, which evolve to columns through a little-understood mechanism. To investigate it, we irradiated a Si(100) single crystal in air with the necessary pulses of an excimer laser beam to obtain two samples, one with a partially and one with a fully developed column structure. Then we alternated scanning electron microscopy observations with irradiation pulses on the same target area. The progressive evolution of the laser-generated structures is presented. Columns grow at notably high rates, from around 0.5 μm/pulse during the early stages to 0.2 μm/pulse on average for 10–20 μm tall columns. The experimental results lead us to suggest a hydrodynamic growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125332
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