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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3228-3237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect structures were investigated by transmission electron microscopy for GaN/Al2O3 (0001) epilayers grown by metal-organic chemical vapor deposition using a two-step process. The defect structures, including threading dislocations, partial dislocation bounding stacking faults, and inversion domains, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. GaN film growth was initiated at 600 °C with a nominal 20 nm nucleation layer. This was followed by high-temperature growth at 1080 °C. The near-interfacial region of the films consists of a mixture of cubic and hexagonal GaN, which is characterized by a high density of stacking faults bounded by Shockley and Frank partial dislocations. The near-interfacial region shows a high density of inversion domains. Above ∼0.5 μm thickness, the film consists of isolated threading dislocations of either pure edge, mixed, or pure screw character with a total density of ∼7×108 cm−2. The threading dislocation reduction in these films is associated with cubic to hexagonal transformation of the nucleation layer region during high temperature growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 49-51 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2468-2470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillan Magazines Ltd.
    Nature 395 (1998), S. 134-135 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] ... Microscopes are to modern science what telescopes are to astronomy: a great enabling technology, which has brought about a considerable part of what is now undergraduate physics. Yet microscopy remains a discipline for professionals, and stands quite aloof from mainstream academic science, ...
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillan Magazines Ltd.
    Nature 394 (1998), S. 49-52 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Lenses for precision electron optics are mainly magnetic, requiring large cylinders of soft iron to focus an electron beam. Such lenses can only be convergent, and so suffer from spherical aberration. Electrostatic lenses are sometimes used, but tend to be even more cumbersome. The advent of ...
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Czechoslovak journal of physics 45 (1995), S. 893-906 
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Some results are collected for phase transitions in which the elastic strain plays a decisive role. Both ferroelastic and antiferroelastic behaviour results in patterning which has a tweed-like appearance. The ‘infinitesimal loop approximation’ first used by Kroupa in 1962 is used to try to sort out the possible effects. Transformations resulting in pure shear produce ferroelastic tweed, whereas transformations based on the nucleation and growth of platelike precipitates seem likely to produce antiferroelastic tweed.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-2242
    Keywords: Key words Apple ; Dysaphis devecta ; Insect resistance ; Marker-assisted selection ; Molecular markers ; Plant breeding
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Sd 1 is a dominant gene for resistance to biotypes 1 and 2 of the rosy leaf curling aphid, Dysaphis devecta Wlk., which can cause economic damage to apple trees. This report describes the identification of three RFLP and four RAPD markers linked to Sd 1 in a cross between the D. devecta susceptible variety ‘Prima’ (sd 1 sd 1) and the resistant variety ‘Fiesta’ (Sd 1 sd 1). Potted trees were artificially infested in the glasshouse, and the ratio of resistant:susceptible plants supported the hypothesis that the resistance was under the control of a single dominant gene. The position of the gene was mapped to a single locus on a ‘Fiesta’ chromosome, within 2 cM of three tightly linked RFLP markers (MC064a, 2B12a and MC029b); the four RAPD markers were located further away (between 13 and 46 cM). This is the first report of molecular markers for an aphid resistance gene in tree fruit crops. The potential application of these markers in a marker-assisted resistance breeding programme is discussed.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-2242
    Keywords: Key words Malus ; Apple ; Venturia ; Scab resistance ; Linkage mapping ; Cluster analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Apple scab, caused by the fungus Venturia inaequalis (Cke.) Wint., is an important disease in commercial apple production. A mapping population of 155 individuals, derived from a cross between the apple varieties ‘Prima’ (resistant)בFiesta’ (susceptible), was scored for response to the disease in replicated field and glasshouse trials throughout Europe. Twenty data sets were selected and cluster analysis was used to form a consensus score for the population fitting a 1 : 1 segregation ratio of resistance:susceptibility. The progeny were scored with molecular markers. A detailed map covering 54 cM of the ‘Prima’ linkage group containing the Vf gene for scab resistance was constructed using 24 molecular markers linked to the resistance gene. One isoenzyme marker (Pgm-1), six RFLP markers and 17 RAPD markers formed a linkage group with the consensus measure of resistance to scab. Four marker bridges were established with the corresponding ‘Fiesta’ linkage group with additional markers (one isozyme, one RFLP, three RAPD and one AFLP). A low chi-square value indicated a good fit of the marker ordering, which was in close agreement with previously reported linkage positions for some of the markers and Vf. Differences were observed in the ability of different scoring methods to resolve susceptible and resistant classes. The results obtained for the consensus classification of resistance to scab for the population may suggest the presence of virulent inocula at some sites, which could overcome the Vf gene for resistance. The consequences of relying on individual scoring occasions for studying Vf scab resistance are discussed in the context of linkage analysis, conventional breeding selection, and marker-assisted selection.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-2242
    Keywords: Key wordsMalus pumila Mill ; Molecular linkagemap ; Marker-assisted selection ; Fruit tree breeding ; Outbred progeny
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Linkage maps for the apple cultivars ‘Prima’ and ‘Fiesta’ were constructed using RFLP, RAPD, isozyme, AFLP, SCAR and microsatellite markers in a ‘Prima’בFiesta’ progeny of 152 individuals. Seventeen linkage groups, putatively corresponding to the seventeen haploid apple chromosomes, were obtained for each parent. These maps were aligned using 67 multi-allelic markers that were heterozygous in both parents. A large number of duplicate RFLP loci was observed and, in several instances, linked RFLP markers in one linkage group showed corresponding linkage in another linkage group. Distorted segregation was observed mainly in two regions of the genome, especially in the male parent alleles. Map positions were provided for resistance genes to scab and rosy leaf curling aphid (Vf and Sd 1, respectively) for the fruit acidity gene Ma and for the self-incompatibility locus S. The high marker density and large number of mapped codominant RFLPs and some microsatellite markers make this map an ideal reference map for use in other progenies also and a valuable tool for the mapping of quantitative trait loci.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Acta mathematica hungarica 83 (1999), S. 315-325 
    ISSN: 1588-2632
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract In this paper the notion of a dual base of countable order for bitopological spaces is introduced, and an analogue of a metrization theorem of A. Arhangel'skii is given.
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