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  • 1995-1999  (46)
  • 1
    Electronic Resource
    Electronic Resource
    Si, Be, and C ion implantation in GaAs0.93P0.07 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2296-2299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07 have been measured in the annealing range 650–950 °C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is ∼60% at a dose of 5×1014 cm2 whereas that of C is an order of magnitude lower. Si produces donor activation percentages up to ∼20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to ∼950 °C, as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage-related point defects remain in the GaAsP even after annealing of 950 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363059
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  • 2
    Electronic Resource
    Electronic Resource
    A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3286-3289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etch-induced surface modifications, utilizing an electron cyclotron resonance source, have been studied as a function of controllable etch parameters. InGaP was etched with BCl3 at a constant substrate temperature (100 °C) and bias voltage (−145 V) using microwave powers varying between 250 and 1000 W. The surface morphology, residual etch damage, and surface stoichiometry were strongly influenced by changes in ion flux. The etch-induced lattice damage and surface smoothness increased as the ion energy was elevated. Low ion flux etching resulted in an In-enriched P-depleted surface suggesting nonuniform desorption of InClx which gave rise to the surface roughness observed at the low microwave powers. The smooth surfaces, achieved at the higher microwave power levels, were attributed to either efficient sputter-assisted desorption of the InClx etch products or to InClx desorption via plasma-induced surface heating. Results of this study demonstrate that etching at microwave powers between 500 and 750 W induce low residual damage and smooth surfaces while maintaining a reasonable etch rate for device processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361227
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  • 3
    Electronic Resource
    Electronic Resource
    Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3705-3709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for GaN, AlN, InN, and InGaN were measured using the same reactor and plasma parameters in Cl2/Ar or CH4/H2/Ar plasmas. The etch rates of all four materials were found to be significantly faster for ECR relative to RIE conditions in both chemistries, indicating that a high ion density is an important factor in the etch. The ion density under ECR conditions is ∼3×1011 cm−3 as measured by microwave interferometry, compared to ∼2×109 cm−3 for RIE conditions, and optical emission intensities are at least an order of magnitude higher in the ECR discharges. It appears that the nitride etch rates are largely determined by the initial bond breaking that must precede etch product formation, since the etch products are as volatile as those of conventional III–V materials such as GaAs, but the etch rates are typically a factor of about 5 lower for the nitrides. Cl2/Ar plasmas were found to etch GaN, InN, and InGaN faster than CH4/H2/Ar under ECR conditions, while AlN was etched slightly faster in CH4/H2/Ar plasmas. The surface morphology of InN was found to be the most sensitive to changes in plasma parameters and was a strong function of both rf power and etch chemistry for ECR etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363320
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of W ohmic contacts to n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 278-281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+-GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out-diffusion was observed on the surface of thin (500 A(ring)) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+-GaN for high temperature applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362816
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  • 5
    Electronic Resource
    Electronic Resource
    GaN: Processing, defects, and devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1-78 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371145
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  • 6
    Electronic Resource
    Electronic Resource
    High rate dry etching of InGaP in BCl3 plasma chemistries (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2497-2499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkable increase in InGaP etch rate in electron cyclotron resonance BCl3 discharges is observed as the microwave power is increased from 250 W (etch rate ∼500 A(ring)/min) to 1000 W (etch rate ∼8000 A(ring)/min). The surface roughness measured by atomic force microscopy decreases from 36 nm at 250 W to 2 nm at 1000 W. The high ion flux incident on the InGaP at high microwave powers appears to remove InClx species by sputter-assisted desorption and prevents formation of the nonstoichiometric In-rich surfaces generally observed with Cl2-based dry etching using conventional reactive ion etching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114437
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  • 7
    Electronic Resource
    Electronic Resource
    Dry etch damage in InN, InGaN, and InAlN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2329-2331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions have been measured as a function of rf power, pressure, and exposure time. The combination of high microwave and high rf powers produces large increases (10–104 times) in sheet resistance of the nitrides, but conditions more typical of real etching processes (rf power 〈150 W) do not change the electrical properties. The nitrides are more resistant to damage introduction than other III–V semiconductors. The removal of damage-related traps occurs with an activation energy of ∼2.7 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114334
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of AlN by metalorganic molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 253-255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane precursors and either tertiarybutylamine or nitrogen from a compact electron cyclotron resonance (ECR) plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5–1×10−4 Torr range. The growth rates, impurity backgrounds, and surface morphologies were examined for both nitrogen sources and both the solid and liquid alanes. In general, growth efficiencies were good for both alane precursors, allowing for deposition of the low temperature, ∼400 °C, AlN buffers needed for subsequent growth of GaN and InGaAlN alloys. Low growth temperatures could not be obtained using tertiarybutylamine, presumably due to poor decomposition efficiency of the source at low temperatures. The structural quality of material grown at high temperatures from the ECR plasma was measured by atomic force microscopy, high resolution x-ray diffraction, and transmission electron microscopy, indicating single crystal material with a surface roughness of ∼8 A(ring) and an x-ray full width half-maximum of 430 arcsec. This ECR plasma-derived material was of sufficient quality to allow for the growth of multiple quantum well InGaAlN structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114684
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence enhancement in AlN(Er) by hydrogenation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1807-1809 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature Er3+ photoluminescence increases of a factor of 5 are observed for AlN(Er) samples treated in a 2H plasma at 200 °C for 30 min. The atomic deuterium passivates defects in the AlN, which normally provide alternative carrier recombination routes. Postdeuteration annealing at 300 °C for 20 min removes the luminescence enhancement by depassivating the nonradiative centers. The AlN(Er) provides a high degree of resistance to thermal quenching of luminescence as a function of temperature because of its wide band gap (6.2 eV), and hydrogenation is a simple method for maximizing the optical output in this materials system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119405
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  • 10
    Electronic Resource
    Electronic Resource
    InN-based Ohmic contacts to InAlN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2592-2594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability to form low resistance Ohmic contacts to InAlN using refractory metallization on In-containing contact layers has been investigated. The crystal quality as measured by surface roughness and x-ray diffraction was found to be a determining factor in the contact resistance which could be obtained using WSix contacts. InN growth conditions which resulted in poorer structural quality, such as the use of GaAs rather than sapphire substrates, low nitrogen flows, and low growth temperatures, resulted in contact resistances of 10−4–10−3 Ω cm2, as compared to ∼10−5 cm2 for InAlN alone. Using optimized conditions, contact resistances to InAlN of ∼3.5×10−6 Ω cm2 were obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118927
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