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  • 1990-1994  (33)
  • 1985-1989  (24)
  • 1970-1974  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Photographic quantitation in spark source mass spectrography using an on-line densitometer and ion intensity areas (1974)
    s.l. : American Chemical Society
    Analytical chemistry 46 (1974), S. 701-706 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60342a007
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  • 2
    Electronic Resource
    Electronic Resource
    Damage formation and substitutionality in 75As++-implanted diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2986-2990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV 75As++ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349326
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  • 3
    Electronic Resource
    Electronic Resource
    Damage and deuterium trapping in highly-oriented pyrolytic graphite (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2225-2233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work the buildup of damage due to deuterium implantation in highly-oriented pyrolytic graphite (HOPG) is investigated. HOPG was implanted with 10–30 keV D3+ at different target temperatures between room temperature and 773 K with fluences from 1014 to 1018 D/cm2. Subsequently, the damage due to the implantation and the retained deuterium were measured by Rutherford backscattering (RBS) in a channeling direction (RBSc) and by the D(3He, p)α nuclear reaction analysis (NRA), respectively. The damage of selected samples was additionally observed with transmission electron microscopy (TEM). The initial trapping efficiency is unity in the whole temperature and energy range. The maximum retention of the deuterium, however, depends on the temperature and implantation energy. The damage in HOPG measured with RBSc starts to saturate at 5×1015 D/cm2 (295 K) and 1.3×1017 D/cm2 (773 K). Both fluences are well below the fluence at which amorphization is observed in TEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353126
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of the nonlinear behavior of a partially ionized, turbulent plasma in a magnetic field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 488-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a number of the methods of nonlinear dynamics are applied to the study of electrostatic turbulence in a magnetized, steady-state, partially ionized plasma. Electrostatic potential fluctuations were obtained by using a capacitative probe. These signals were captured, digitized, and recorded with a LeCroy transient recorder system interfaced to an IBM-AT personal computer. A commercially available software program was used to calculate power spectra, to reconstruct and plot phase portraits, take Poincaré sections, compute correlation dimensions and Lyapunov exponents, and to perform other manipulations of the time series of electrostatic potential fluctuations obtained from the plasma. Evidence of low-dimensional chaos was sought, and trends were investigated which related the state of the turbulence to such plasma parameters as the anode voltage (rms electrostatic potential), background gas pressure (collisionality), and magnetic induction. These variables were found to have a significant effect on the nonlinear dynamics of the plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346818
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  • 5
    Electronic Resource
    Electronic Resource
    On-line computer-controlled electrical detection in spark source mass spectrometry (1972)
    s.l. : American Chemical Society
    Analytical chemistry 44 (1972), S. 1203-1206 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60315a007
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-induced C segregation on Fe films on pyrolytic graphite under high-fluence D bombardment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe films of 700–1700 A(ring) were evaporated on pyrolytic graphite surfaces with both edge and base orientations, and bombarded with D ions at energies from 2 to 13 keV at fluences of 1019 D/cm2. The different ion energies and Fe film thicknesses allow different defect distributions in the graphite substrate of the samples. The Fe sputtering yield of the samples was measured directly by means of laser-induced fluorescence at temperatures ranging from room temperature to 900 K. The depth distribution of the components during mixing is obtained by means of Rutherford backscattering spectroscopy. At 800 K, a drastic reduction of the Fe sputtering yield is observed if energetic ions can reach the graphite substrate. C segregates on top of the Fe layers for D ion ranges larger than the Fe layer thickness. The thickness of the segregated C layers depends on the graphite orientation. For 13 keV D bombardment of 700 A(ring) Fe samples, for example, it is about 100 A(ring) for base graphite and about 1000 A(ring) for edge graphite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99463
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism of hydrocarbon formation upon interaction of energetic hydrogen ions with graphite (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 964-966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current model for hydrocarbon formation upon the interaction of energetic hydrogen ions with graphite assumes a reaction of adsorbed hydrogen with carbon surface atoms requiring a temperature of 800–900 K. This model is strongly questioned by results of hydrocarbon formation from a layered 13C/12C sample and by desorption measurements after room-temperature implantation. The formation of 13CD4 and 12CD4 is monitored during deuterium bombardment of a pyrolytic graphite sample covered with a layer of 200 A(ring) of 13C. Only for ion energies corresponding to ranges smaller than 200 A(ring) 13CD4 dominates, while at higher energies only 12CD4 is found. The methane is thus formed at the end of ion range rather than in a surface reaction of back-diffusing ions. Desorption experiments using a slow temperature range after room-temperature implantation show the release of CD4 prior to D2, thus indicating a diffusion-limited release of CD4 already formed during the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98777
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of solid phase epitaxy (SPE) have been measured in MeV ion-implanted amorphous Si layers up to 5 μm thick. Epitaxial crystallization in these layers occurs at a constant rate throughout the entire film, without loss of interface planarity or competition from random nucleation or twin formation. The activation energy for SPE in thick layers is found to be 2.70 eV, in excellent agreement with the value determined previously in much thinner films. The SPE kinetics are shown not to depend on the implant dose for doses up to 1000 times the threshold for amorphization. The presence of water vapor in the annealing ambient during SPE results in the indiffusion of hydrogen and a concomitant reduction of the SPE growth rate at distances as great as 2 μm from the surface. This effect may have important implications for the development of a microscopic model of the SPE process in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103477
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  • 9
    Electronic Resource
    Electronic Resource
    On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D+ irradiation at elevated temperature (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342656
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  • 10
    Electronic Resource
    Electronic Resource
    Radiation damage and annealing in graphite implanted with H+2 and Mo+ (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2603-2608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage due to H+2 and Mo+ implantation into hot-worked pyrolytic graphite and into single-crystal graphite flakes has been studied using 1-MeV 4He+ ion channeling. The implant energies used, 35 keV for H+2 and 120 keV for Mo+, yielded ranges of about 1600 and 600 A(ring), respectively. For H2 implantation, a partially crystalline surface layer remains after a fluence of 2×1016 H/cm2; this layer is completely disordered at 2×1017 H/cm2. At higher hydrogen fluences a surface layer exfoliates. For Mo implantation the disorder introduced at a fluence of 5×1014 Mo/cm2 is sufficient to prevent channeling throughout the range. For both implant species, complete recrystallization of samples disordered up to the surface occurs for annealing only at temperatures above 2800 K. If a surface layer remains crystalline after implantation, recrystallization proceeds both from the bulk and from the surface, and crystallinity is restored at 2300 K. While hydrogen is known to be released at temperatures between 1100 and 1500 K, Mo remains within its original range distribution up to the temperature of complete recrystallization. At a temperature of 2300 K an ordering of the implanted Mo atoms with respect to the c axis is observed, indicating short-range migration within the range distribution. At 2800 K no more Mo could be found in the analyzed surface layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340997
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