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  • 1990-1994  (24)
  • 1980-1984  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Optoelectronic device mapping using differential imaging techniques (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3837-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mapping technique has been developed that uses differential imaging to characterize semiconductor optoelectronic devices. Although the technique was developed for examination of optical modulators, it has been extended to provide information on the uniformity and bandgap of any material through which one can transmit light. The sharpness of the bandedge, maximum absorption strength, and the film thickness determine the sensitivity of the technique for any particular application. For example, the bandedge sensitivity in 100 periods of InGaAs/GaAs multiple quantum wells was ±20 μeV and can be detected at each location in the field of view in under three minutes. This technique has been applied to modulators designed using strained layer materials for use at a 1-μm operating wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349187
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8426-8428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant difference between beryllium and carbon distribution in GaAs after zinc diffusion is presented. It is shown that grown-in carbon is stable and remains localized even after zinc diffusion, whereas grown-in beryllium diffuses very rapidly in the presence of diffusing zinc. This effect can be attributed to the difference in the crystal lattice site which the dopant occupies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347413
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Endogenous Modulator of Benzodiazepine Binding in Rat Cortex (1981)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 36 (1981), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Benzodiazepine binding sites, solubilized with 1% digitonin, were used to study specific [3H]flunitrazepam ([3H]FNP) binding. Specific binding increased nonlinearly with increasing amounts of digitonin extract in the assay. Specific binding was increased, and the relationship to amount of extract became linear. in the presence of 2% polyethylene glycol 6000 (PEG). Heat treatment destroyed binding activity of the extract, but not ability to inhibit [3H]FNP binding. Kinetic analysis showed inhibition to be noncompetitive. The inhibitory activity was sensitive to trypsin. Extracts of repeatedly frozen, thawed, and washed membrane preparations still possessed inhibitory activity. It is suggested that digitonin solubilizes a membrane protein that inhibits benzodiazepine binding. PEG apparently removes this substance from the binding sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1981.tb02419.x
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical beam epitaxial growth of InAs using trimethylindium and arsine (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2219-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102972
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm−3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm−3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103118
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Is the cation sticking coefficient unity in molecular beam epitaxy at low temperature? (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1425-1427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using identical Ga flux density, we have measured the growth rate difference between GaAs and GaSb. The large discrepancy of 15% seems to suggest a change in the sticking coefficient of Ga when different group V species are involved. However, when lattice parameters are taken into account correctly, the discrepancy appears to be a natural consequence because fewer Ga atoms are needed to complete a monolayer on the GaSb surface. Similar results are also observed for the growth of Al(Sb,As) and In(Sb,As). This points to the possible systematic error in the estimation of ternary composition, such as InGaAs, by adding the growth rates of binary constituents InAs and GaAs without correction for change in lattice constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103455
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2657-2659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced diffusion of Si due to He ion implantation in Si-delta doped GaAs layers has been observed by the capacitance-voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared to thermal diffusion was observed. We also observe a decrease in the integrated sheet carrier concentration as a result of the He implants, and the decrease appears independent of annealing time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102844
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of carrier escape time on the performance of semi-insulating photorefractive self-electro-optic effect devices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3088-3090 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of carrier escape time on the performance of semi-insulating photorefractive self-electro-optic effect devices by investigating three samples of Cr-doped GaAs/AlxGa1−xAs multiple quantum wells of varying barrier thickness and height. Reduction of barrier thickness from 100 to 35 A(ring) and Al fraction from 0.42 to 0.29 results in a three orders of magnitude increase in diffraction efficiency at a given voltage. The effect of shorter carrier escape and sweep-out times on the diffraction efficiency, resolution, and sensitivity of these devices is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109144
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  • 10
    Electronic Resource
    Electronic Resource
    Masked growth of InGaAsP-based quantum wells for optoelectronic device applications (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1641-1643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate selective area growth of lattice-matched InGaAsP/InP, and strained InGaAs/InP and InAsP/InP multiple quantum wells on SiO2-masked InP substrate by chemical beam epitaxy. This method can be used to produce quantum well p-i-n waveguide modulators with a single growth step. Photoluminescence measurements performed on waveguide stripes ranging from 1–50 μm in width reveal a red shift of the band edge with decreasing stripe width in InGaAsP/InP and InGaAs/InP quantum well systems, but no shift in InAsP/InP quantum wells for stripe widths larger than 1 μm. In addition, we find that this band-gap tunability is stripe orientation dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108612
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