Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced electron transfer, geminate recombination, and diffusion in liquid solution (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 8007-8009 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100384a003
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3Oy single crystals from a mixture of YBa2Cu3Oy and Ag2O (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3580-3582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of the superconductor YBa2Cu3Oy have been grown from a mixture of solid phase YBa2Cu3Oy and liquid phase silver. Crystals with a thickness of up to 1 mm along the c axis can be obtained when the mixture is soaked at 1005 °C for more than 8 h. Silver melt enhances the peritectic partial melting of the YBa2Cu3Oy solid phase, and induces the solution and reprecipitation process during sintering at 1005 °C. Stacked plate-like YBa2Cu3Oy grains grow through a coalescence process. Crystals are heavily twinned after 20 h of O2 annealing at 500 °C. They exhibit a sharp superconducting transition with an onset temperature of 93 K in zero field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352915
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction studies of YBa2Cu3Ox (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4798-4804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a specially designed off-axis faced magnetron sputtering chamber we have performed in situ x-ray diffraction studies of the growth of YBa2Cu3Ox films using a synchrotron light source. The orientation and rocking curve width were studied as a function of substrate temperature, O2/Ar partial pressures, and deposition rate. Growth rate was studied on SrTiO3, LaAlO3, and MgO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352093
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Low-frequency noise in small InGaAs/InP p-i-n diodes under different bias and illumination conditions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5200-5204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements are reported on small InGaAs/InP p-i-n photodiodes under different bias and illumination conditions. In the first experiment measurements were taken when the diodes were reverse biased and illuminated with incandescent light. At high frequencies the noise is shot noise and at low-frequencies the noise has a spectrum proportional to fγ with γ=−1.0 for one set of two devices and γ=−0.8 for another set of two devices. At low-frequencies the spectral noise intensity is proportional to the current squared. In a second experiment the diodes were forward biased (no illumination) and the spectral intensity of the low-frequency noise was proportional to the current. Under these bias conditions it was possible to extract the parameter αH. The obtained values for this parameter are not compatible with quantum 1/f noise but do seem to coincide with values related to 1/f noise due to recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347062
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Application of "critical compositional difference'' concept to the growth of low dislocation density (〈104/cm2) InxGa1−xAs (x≤0.5) on GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1752-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer epitaxial structures consisting of InxGa1−xAs layers of various compositions were grown on GaAs substrates by the molecular beam epitaxy technique. Dislocation evolution and residual strain in these heterostructures were studied using cross-sectional transmission electron microscopy (XTEM) and high-resolution x-ray diffraction analyses, respectively. The multilayer heterostructures were designed such that the compositional difference between two adjacent InxGa1−xAs layers in the stack was less than a critical compositional difference of Δx=0.18, taking partial lattice-relaxation into account. XTEM studies of the stacked structures indicated dislocation evolution to be confined to the GaAs substrate and the InxGa1−xAs layers underlying the top InxGa1−xAs layer in the stack, the top InxGa1−xAs layer being essentially dislocation-free. This phenomenon is attributed to a monotonic increase in the yield strength of InxGa1−xAs at the appropriate growth temperatures with increasing values of x. Such behavior appears to persist up to an InxGa1−xAs composition of approximately x=0.5, whereupon a further increase in composition results in dislocation evolution in the top layer of the stack. It is postulated that the yield strength of InxGa1−xAs decreases with increasing values of x beyond x=0.5. Extremely low dislocation density InxGa1−xAs material was grown on GaAs using the stacked structure approach as evidenced by etch pit analysis. For example, dislocation densities of 1–2×103/cm2 and 5–6×103/cm2 were recorded from In0.35Ga0.65As and In0.48Ga0.52As top layers, respectively. Such InxGa1−xAs alloys would be potentially suitable for the fabrication of photonic devices operating at 1.3 μm (x=0.35) and 1.55 μm (x=0.48).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351699
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Gain measurement of a CuBr laser by means of modified amplified spontaneous emission (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3941-3942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified amplified spontaneous emission technique has been introduced to measure the radial distributions of the gain and the saturation energy density of the output of a double-discharge pulsed CuBr laser. An asymmetric distribution of the gain was obtained. With the laser tube temperature at 420 °C, the peak value of the gain and the saturation energy density are 70 db/m and 85 μJ/cm3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345002
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Solvent relaxation and electron back transfer following photoinduced electron transfer in an ensemble of randomly distributed donors and acceptors (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 3550-3561 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The role of solvent relaxation in electron back transfer following electron transfer from an optically excited donor to randomly distributed acceptors is treated theoretically. The solvent dynamics are included by using a time dependent electron back transfer rate function, Keff(R,t). The solvent relaxation is parameterized by τr, the relaxation time, D, the solvent energy diffusion constant, and Δq, the potential barrier height difference between the nonequilibrium solvent state formed upon ion creation and the relaxed solvent state. The expression for the ensemble averaged donor cation state population probability, 〈Pct(t)〉, as a function of these solvent relaxation parameters is derived. Numerical calculations are presented. Relationships among 〈Pct(t)〉, the intermolecular interaction parameters, and solvent relaxation parameters provide detailed insights into the distance and time dependence of the flow of electron probability in an ensemble of donors and acceptors. The theoretical expressions can be used to calculate experimental observables such as the transient grating signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458787
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Long-wavelength infrared detection in a Kastalsky-type superlattice structure (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 503-505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first successful demonstration of long-wavelength infrared (LWIR) detection with a Kastalsky-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10 μm in very good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. The response at 83 K is about 50% of the response at 24 K. Optimization of the response, operating temperature, or bias voltage has not been carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103634
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2396-2398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the successful fabrication of a planar, low dark current, and high sensitivity In0.4Ga0.6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and anti-reflection coatings, the detector has a quantum efficiency of 42% and a peak responsivity of 0.45 A/W at 1.3 μm wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2×10−4 cm2 is 5×10−9 A at −5 V, and the breakdown voltage exceeds 25 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104882
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    THE DISPOSITION OF [24-3H]CEREBROSTEROL IN DEVELOPING RAT BRAIN (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 25 (1975), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: —The uptake into subcellular fractions of developing rat brain in vivo of intracerebrally injected [4-14C]cholesterol, [24-3H]cerebrosterol, and [24-3H]24-epicerebrosterol was measured for periods up to 30 days following administration. [4-14C]cholesterol was accumulated rapidly in nuclei, nerve endings, and microsomes, more slowly in myelin and mitochondria. [24-3H]cerebrosterol was accumulated rapidly in myelin, nerve endings, and microsomes, more slowly in nuclei and mitochondria. The uptake of [24-3H]24-epicerebrosterol was essentially the same as that of [24-3H]cerebrosterol. Ratios of radioactivities of [24-3H]cerebrosterol and [4-14C]cholesterol accentuated the early accumulation of [24-3H]cerebrosterol in myelin, nerve endings, and microsomes, and declining 3H:14C ratios disclosed the rapid elimination of [24-3H]cerebrosterol and [24-3H]24-epicerebrosterol relative to [4-14C]cholesterol in nerve endings and microsomes. The data suggest that the removal of [24-3H]cerebrosterol from brain results from an enzymic metabolism of the sterol, therefore that cerebrosterol exists in brain in a dynamic state of biosynthesis and catabolism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1975.tb04385.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...