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  • 11
    Electronic Resource
    Electronic Resource
    Carbon-doped impurity induced layer disorder 0.98 μm lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high power carbon-doped InGaAs/AlGaAs lasers using an impurity-induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other p-type dopants, thereby avoiding displacement of the p-n junction, even at the high temperatures and long diffusion times required by the disordering process. Secondary ion mass spectrometry (SIMS) measurements before and after Si diffusion show the p-n junction position to be unchanged during processing. The carbon was introduced using CCl4 as an extrinsic precursor, giving improved control over doping levels and ternary growth conditions that is not available with intrinsic carbon doping. Thresholds of 20 mA and slope efficiencies of 0.44 mW/mA at 25 °C were obtained for lasers with cavity lengths of 500 μm and coated facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357048
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  • 12
    Electronic Resource
    Electronic Resource
    Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet/ozone cleaning of GaAs substrates prior to metalorganic molecular beam epitaxy at 500 °C is shown to reduce the interfacial C and O concentrations by more than two orders of magnitude. Metal-semiconductor field-effect transistors (MESFETs) utilizing this cleaning prior to growth of the component epitaxial layers display superior current voltage (I-V) saturation characteristics compared to identical devices grown without the cleaning step. By contrast, provided the GaAs surface is not contaminated with silicates, the atomic hydrogen generated at the growth surface during growth by metalorganic chemical vapor deposition (MOCVD) leads to lower O and C interfacial concentrations, thereby circumventing the need for ozone cleaning. MESFETs grown by MOCVD with or without this cleaning have excellent I-V characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105184
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  • 13
    Electronic Resource
    Electronic Resource
    In-based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1158-1160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable p ohmic contact for AlGaAs/GaAs heterojunction bipolar transistor (HBT) using AuBe-In/Ag/Au is presented. Excellent morphology after annealing at 400 °C for 20 s was observed and a transfer resistance of 0.095 Ω mm obtained on p+-GaAs (1×1019 cm−3). Silver acts as a diffusion barrier to prevent Au spikes which will degrade the performance of the thin base layer HBT. The indium layer is highly desirable to reduce the contact resistance by forming the InGaAs phase at metal-GaAs interfaces. Beryllium is the p-type dopant and a top gold layer is used to lower the sheet resistance of the contact metals. The mode of current transport is dominant by tunneling through the barrier due to field emission in the heavily doped materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104350
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  • 14
    Electronic Resource
    Electronic Resource
    High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 77-79 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality AlxGa1−xAs has been grown by low-pressure (30 Torr) organometallic vapor phase epitaxy (OMVPE) using a novel precursor, trimethylamine alane (TMAAl), as the aluminum source. The epilayers exhibited featureless surface morphology, very strong room-temperature photoluminescence (PL), and excellent compositional uniformity (x=0.235±0.002 over a 40 mm diameter). The residual carbon incorporation, which determined the background doping, depended largely upon the choice of gallium precursor. Using triethylgallium, carbon incorporation could be largely suppressed ([C](very-much-less-than)1016 cm−3). The carbon-related emission intensity was less than the bound exciton emission in low-temperature (1.6 K) PL even at excitation powers as low as 50 μW cm−2. By sharp contrast, the use of trimethylgallium led to much higher C concentrations (2–5×1017cm−3). Under appropriate conditions, therefore, the use of TMAAl produces extremely high purity AlGaAs of superior quality to AlGaAs grown using conventional precursors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104450
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  • 15
    Electronic Resource
    Electronic Resource
    Hydrogenation of GaAs-on-InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 887-889 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of atomic hydrogen into heteroepitaxial Si-doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs-on-InP. Plasma hydrogenated diodes annealed at 400 °C to restore the electrical activity of the passivated shallow donors have reverse breakdown voltages (VB) of ∼6.5 V compared to 4.5 V for untreated samples. The increases in VB are stable to 500 °C annealing for 5 min. Atomic profiling of deuterated samples showed substantial outdiffusion of deuterium from the GaAs at 600 °C, with increasing accumulation at the heterointerface. The deuterium in this disordered region after 600 °C annealing is in a relatively immobile, electrically inactive state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103394
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  • 16
    Electronic Resource
    Electronic Resource
    Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2186-2188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of SF6 to CH4/H2 discharges is shown to produce a significant increase in the selectivity for dry etching of both InGaAs and InP over AlInAs. The selectivity is a strong function of the dc bias on the sample during the reactive ion etching, with equirate removal of InGaAs and AlInAs for biases above 300 V. For lower bias values, the etch stop mechanism is related to the formation of Al-F and In-F species on the AlInAs surface, as evidenced by x-ray photoelectron spectroscopy. The use of SF6 allows independent variation of the ratio of F to the other reactive species, in comparison to the use of fixed ratio gases such as C2H4F2 or CH3F.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102963
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  • 17
    Electronic Resource
    Electronic Resource
    Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1251-1253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm−3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm−3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102528
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  • 18
    Electronic Resource
    Electronic Resource
    Carbon implantation in InGaAs and AlInAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co-implantation conditions. The co-implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co-implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary-ion mass spectrometry measurements to be less than 3.3×10−14 cm2 s−1 at 800 °C in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102531
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  • 19
    Electronic Resource
    Electronic Resource
    Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 860-862 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-resistivity (〉107Ω/(D'Alembertian)) regions in GaAs-AlGaAs heterojunction bipolar transistor (HBT) structures by oxygen and hydrogen ion implantation has been investigated as a function of ion dose and subsequent annealing temperature (400–700 °C). Isolation leakage currents as low as 8 μA mm−1 at 6 V can be achieved between 100-μm-wide ohmic contacts separated by a 16 μm spacing. The isolation of these 1.8-μm-thick heterojunctions requires up to six different energy oxygen implants (40–400 keV) and three different energy proton implants (100–200 keV) with doses in the mid 1012 cm−2 range for O+ and 5×1014 cm−2 for H+ ions. Similar results can be achieved by substituting a MeV energy oxygen implant for the proton implants. The optimum post-implant annealing temperature depends on the ion dose but is in the range 500–600 °C. The evolution of the sheet resistance of the implanted GaAs-AlGaAs material with annealing is consistent with a reduction in tunneling probabilities of trapped carriers between deep level states for temperatures up to ∼600 °C, followed by significant annealing of these deep levels. Small geometry (2×9 μm2) HBTs exhibiting current gain of 44 and cutoff frequency fT as high as 45 GHz are demonstrated using implant isolation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102683
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  • 20
    Electronic Resource
    Electronic Resource
    Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2654-2656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102866
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