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  • 1990-1994  (30)
  • 11
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 12
    Electronic Resource
    Electronic Resource
    Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 A(ring))/Sb(100 A(ring))/Mn(10 A(ring))/Pd(250 A(ring))/p-GaAs. Thermal annealing of the contact between 300 and 600 °C for 10 s yields contact resistivities in the range of low 10−6 Ω cm2 on substrates doped to 2.5×1018 cm−3. A contact resistivity of 4.5×10−7 Ω cm2 can be obtained after annealing at 500 °C on samples with a doping concentration of 4.5×1019 cm−3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105143
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  • 13
    Electronic Resource
    Electronic Resource
    An x-ray photoemission spectroscopy investigation of oxides grown on AuxSi1−x layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1826-1830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy was used to analyze the oxide grown at low temperature on AuxSi1−x films. It was found that the oxide is stoichiometric SiO2, but is structurally distinct from oxides grown on Si at high temperatures (950 °C). Also, unoxidized Au-Si atom inclusions were observed in the oxide. The composition of the inclusions is dependent on the initial bulk AuxSi1−x composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345610
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  • 14
    Electronic Resource
    Electronic Resource
    Moving species during ion mixing in GexSi1−x/metal systems (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1814-1819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the motion of semiconductors during ion mixing was investigated by studying both the temperature and the atomic mass dependence of moving species in the GexSi1−x/Ni and the GexSi1−x/Pd systems. Ion mixing was performed with 280-keV Ar ions at temperatures between 30 K and room temperature. The atomic mass of the GexSi1−x alloy was adjusted by changing the concentration of Ge in the alloy. In thermally induced reactions, no preferential motion of Si or Ge was observed. During ion mixing, the atomic flux of Si was observed to be enhanced compared to that of Ge. The atomic flux of the sum of Si and Ge to metal decreases with increasing substrate temperature during mixing and with increasing Ge concentration in the GexSi1−x alloy. From the strong atomic mass dependence of the moving species during ion mixing it is concluded that the origin of the motion of semiconductors under ion mixing conditions is due to the effects of secondary recoils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345608
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  • 15
    Electronic Resource
    Electronic Resource
    Stable and shallow PdIn ohmic contacts to n-GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2129-2131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, low-resistance PdIn ohmic contact to n-GaAs has been developed based on the solid phase regrowth mechanism [T. Sands, E. D. Marshall, and L. C. Wang, J. Mater. Res. 3, 914 (1988)]. Rapid thermal annealing of a Pd-In/Pd metallization induces a two-stage reaction resulting in the formation of a uniform single-phase film of PdIn, an intermetallic with a melting point greater than 1200 °C. A thin (∼5 nm) layer of average composition In0.4Ga0.6 As uniformly covers the interface between the PdIn layer and the GaAs substrate. Specific contact resistivities and contact resistances of ∼1×10−6 Ω cm2 and 0.14 Ω mm, respectively, were obtained for samples annealed at temperatures in the 600–650 °C range. The addition of a thin layer of Ge (2 nm) to the first Pd layer extends the optimum annealing temperature window down to 500 °C. Specific contact resistivities remained in the low 10−6 Ω cm2 range after subsequent annealing at 400 °C for over two days.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102993
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  • 16
    Electronic Resource
    Electronic Resource
    Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+ (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between implantation damage and electrical activation has been investigated in GaAs implanted with 100-keV 30Si+ to doses of 5×1013/cm2 and 2×1014/cm2, using low and moderate beam currents at room temperature (RT) and at slightly elevated temperatures. For a given Si+ dose, the damage, measured by ion channeling immediately after implantation, was varied by more than a factor of 2 over the range of conditions studied. A strong negative correlation was established between this damage and the electrical activation obtained after high-temperature annealing, i.e., an increase in the initial damage led to a decrease in the sheet-carrier concentration. The results demonstrate a scheme for increasing the sheet-carrier concentration beyond that typically obtained for high-dose Si in GaAs, namely, by using a slightly elevated implant temperature (∼90 °C for a beam current of 1 μA/cm2). In addition, the initial damage is shown to consist of two components; one that is stable at RT and another that is not. The sheet-carrier concentration was found to be affected only by that component of the damage that is stable at RT, although both components were reduced by increasing the implant temperature or by reducing the dose rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110928
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  • 17
    Electronic Resource
    Electronic Resource
    The Si/Pd(Si,Ge) ohmic contact on n-GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3016-3018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified Si/Pd ohmic contact to n-GaAs has been developed based on the solid-phase regrowth mechanism. The Si/Pd contact usually yields a contact resistivity of 2×10−6 Ω cm2. A thin (∼15 A(ring)) layer of additional Ge or Si embedded in the Pd layer of the Si/Pd contact structure is used to reduce the contact resistivity from ∼2×10−6 to 2–4×10−7 Ω cm 2 without suffering from a loss of thermal stability. The reduction in the contact resistivity is explained in terms of the formation of an n+ GaAs surface layer via solid-phase regrowth. The modified contacts show uniform surface and interface morphologies. The contact resistivity of the modified contacts remains in the mid-10−6 Ω cm2 range after annealing at 400 °C for 50 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106794
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  • 18
    Electronic Resource
    Electronic Resource
    Photoelastic AlGaAs/GaAs waveguide polarizer (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2047-2049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs double heterostructure transverse-electric (TE) waveguide polarizers, 5 mm long, with extinction ratios exceeding 20 dB and excess losses of 〈1 dB have been fabricated using simple thin film technology. The single-mode photoelastic waveguides were made by depositing either a thin Ni film (∼1000 A(ring)) with a 5-μm-wide window stripe pattern followed by thermal annealing or a thin W film (∼900 A(ring)) with a 5-μm stripe pattern using rf sputtering with the substrate under negative dc bias. The polarization mode selection is caused by the stress-induced birefrigence of the photoelastic waveguides. The change in dielectric constant due to stresses in the thin film structure was obtained from the experimental intensity output profile using an iterative calculation method. The tensile stress is 3×109 dyn/cm2 in the fully reacted Ni3GaAs stressor layer. The stress in the as-sputtered W films was compressive and decreased from 1×1010 dyn/cm2 to 4×109 dyn/cm2 after annealing between 300 and 500 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110587
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  • 19
    Electronic Resource
    Electronic Resource
    Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 536-538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical role of the optical source spectral linewidth in semiconductor low loss waveguide measurements using the Fabry–Perot resonance method is analyzed. For 5-mm-long GaAs/AlGaAs waveguides with losses in the 1 dB/cm range, a frequency stabilized single mode laser with a linewidth of less than 0.01 A(ring) is required to obtain a loss value accurate to within 5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111095
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  • 20
    Electronic Resource
    Electronic Resource
    Domain inversion in KTiOPO4 using electron beam scanning (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1167-1169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain inversion in c-cut KTiOPO4 was produced by scanning an electron beam on the −c face. The domain reversal occurred through the 1 mm thickness of the sample. Second-harmonic conversion efficiency of 7×10−5 was measured for a fifth-order grating by focusing the beam to a 7 μm spot in a 500-μm-long domain-inverted KTP crystal. This efficiency is close to the theoretical value of 9×10−5. The measured phase matching bandwidth was 1.9 nm, which is in agreement with the theoretical value of 1.5 nm indicating that the domain-inverted grating is reasonably uniform over its entire length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109811
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