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  • 11
    Electronic Resource
    Electronic Resource
    Instabilities associated with a negative rf resistance in current-carrying ion sheaths (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 228-235 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent instabilities on the order of the ion plasma frequency are generated by applying a dc voltage between a meshed grid and a disk target in an unmagnetized plasma. The instability occurs in the ion-rich current-carrying sheath on the negatively charged grid when some ions are reflected from the grid to the sheath edge by the potential difference between two plasmas divided by the grid. The exciting mechanism of the instability has been identified as a negative rf resistance associated with the ion inertia in the ion-rich sheath, coupled to an ion resonance caused by a positive feedback due to the reflection of ions in the sheath region. The frequency of the instability, which is proportional to the plasma density, is basically determined by the ion transit time through the sheath, and thus, is proportional to the product of inverse sheath thickness and average ion velocity related to the applied voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859940
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  • 12
    Electronic Resource
    Electronic Resource
    Density relaxation of silicon dioxide on (100) silicon during thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the refractive index of thermally grown oxide after annealing reveal that the density relaxation of the oxide is well described by a stretched exponential decay function. The experiments of two-step oxidation show that oxygen diffusivity in the oxide exponentially decreases with the oxide density. The relation between the oxide density and the refractive index is well expressed by a simple power relation rather than the Lorenz–Lorenz formula.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345563
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  • 13
    Electronic Resource
    Electronic Resource
    Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1651-1653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the correlation length (Λ) of interface roughness in GaAs/AlAs quantum wells (QWs) prepared by molecular beam epitaxy (MBE). It is found that the mobility of two-dimensional electrons in very thin selectively doped GaAs/AlAs QW structures is substantially enhanced when the bottom AlAs barrier layer is prepared by alternate beam MBE and/or by the use of superlattice buffer layer below the QW. By measuring the electron concentration dependence of mobility and comparing with the theory of interface roughness scattering, we have found that Λ of the bottom (GaAs-on-AlAs) interface of the QW gets as large as 200–300 A(ring), when prepared by the modified growth technique, which is about three times as large as that (∼70 A(ring)) by conventional MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104077
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  • 14
    Electronic Resource
    Electronic Resource
    Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied template effects in molecular beam epitaxy (MBE) of ferromagnetic MnAs thin films on (001) GaAs substrates. When As2 flux was first supplied without Mn flux on the (001) GaAs prior to the MnAs growth, the surface reconstruction was disordered c(4×4), a more As-rich surface than c(4×4). The growth direction of the MnAs thin film grown on this surface is [1¯100] and the easy magnetization axis was found to be along the [1¯1¯20] of MnAs and the [110] of GaAs. In contrast, when one monolayer of Mn was first deposited on the c(4×4) GaAs surface and then As2 flux was supplied to grow MnAs, the growth direction of the MnAs thin film was found to be mainly [1¯101], and the easy magnetization axis was along the [1¯1¯20] of MnAs and the [1¯10] of GaAs, 90° different with respect to the substrate. These results indicate the importance of the very first monolayer in controlling the epitaxial orientation and magnetic properties of epitaxial ferromagnetic MnAs thin films. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112831
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  • 15
    Electronic Resource
    Electronic Resource
    Epitaxial τMnAl/NiAl magnetic multilayers on AlAs/GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 839-841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown a novel type of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal τMnAl and nonmagnetic (CsCl-type) NiAl on (001) GaAs substrates using molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy (TEM) show that monocrystalline MnAl/NiAl multilayers are formed with the expected epitaxial orientations and that the c axis of the tetragonal structure of the ultrathin MnAl film is aligned perpendicular to the substrate. Composition modulation is clearly evidenced by TEM even when the thickness of each MnAl and NiAl layer is as thin as 3 monolayers. Perpendicular magnetization of the MnAl/NiAl multilayers is shown by both magnetization and magnetotransport measurements at room temperature, exhibiting remarkably square hysteresis loops, high values (Mr(approximately-greater-than)300 emu/cm3) of remanent magnetization, and relatively low values of coercive field (0.2〈Hc〈1 kOe).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109871
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  • 16
    Electronic Resource
    Electronic Resource
    Epitaxial MnGa/NiGa magnetic multilayers on GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 696-698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a new class of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal MnGa and nonmagnetic (CsCl-type) NiGa on (001) GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy analyses show that MnGa/NiGa multilayers with atomically abrupt interfaces are formed with the expected epitaxial orientations, and, in particular, that the c-axis of the tetragonal structure of the MnGa film is aligned perpendicular to the substrate. Perpendicular magnetization of the MnGa/NiGa multilayers was evidenced by both vibrating sample magnetometer and extraordinary Hall effect measurements at room temperature, with higher values (Mr=267–302 emu/cm3) of remanent magnetization than those of previously reported MnGa and MnAl thin films. The capability of growing this new class of materials will allow a new degree of artificial materials design on semiconductor substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109932
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  • 17
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3115-3117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study molecular beam epitaxial growth and structural properties of intermetallic compound CoAl on AlAs/GaAs III-V semiconductors. CoAl has a CsCl structure whose lattice constant is nearly half the lattice constant of GaAs and AlAs, hence, it is a good candidate for the constituent material in epitaxial metal/semiconductor heterostructures. We investigate the dependence of crystallinity of Co1−xAlx epitaxial layers on Al composition x and on growth temperature Ts, by in situ reflection high-energy electron diffraction and ex situ x-ray measurements. It is found that the single-crystalline CoAl with high quality can be obtained at x=0.5 and Ts=350 °C. Under appropriate growth procedures and conditions, the epitaxial growth orientation is (001)[110]CoAl on (001)[110]AlAs/GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105756
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  • 18
    Electronic Resource
    Electronic Resource
    Atomic-scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor (GaAs/AlAs) heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 835-837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown GaAs/AlAs/CoAl/AlAs/GaAs epitaxially embedded metal/semiconductor heterostructures by molecular beam epitaxy. When the growth temperature of overgrown GaAs is relatively low (440 °C), the buried metallic CoAl film with the thickness of 50 A(ring) is uniform and planar with extremely smooth and abrupt metal/semiconductor interfaces. The top (AlAs-on-CoAl) interface is atomically smooth with the roughness of at most 1 monolayer, while the bottom (CoAl-on-AlAs) interface has the roughness of 2–3 monolayers. This sample shows very low resistivity of 11–41 μ Ω cm at room temperature, indicating that the electrically continuous metallic film is grown. In contrast, when the GaAs overlayer is grown at 580 °C, CoAl dots with the size of 200–250 A(ring), which are covered with {001} and {111} facets, are fabricated, resulting from agglomeration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107432
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  • 19
    Electronic Resource
    Electronic Resource
    Polyperinaphthalene film formation by pulsed laser deposition with a target of perylenetetracarboxylic dianhydride (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3237-3239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of polyperinaphthalene (PPN) have been obtained by Nd:YAG pulsed laser deposition with a target of perylenetetracarboxylic dianhydride. Components of the films depend on the power and wavelength of the laser light, which is verified by absorption spectra, Raman scattering spectra, and in situ mass spectra. The optimum conditions for the PPN film formation is 10 mJ cm−2 at 266 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111321
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  • 20
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1565-1567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown ferromagnetic MnGa ultrathin films on GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy show that monocrystalline MnGa films are grown with the c axis of the tetragonal unit cell normal to the (001) GaAs substrates. Both magnetization measurements by vibrating sample magnetometer and extraordinary Hall effect (EHE) measurements indicate perpendicular magnetization, with the remnant magnetization of 225 emu/cm3 and EHE resistivity in the range of 0.5–4 μΩ cm at room temperature. The material possesses properties ideal for certain nonvolatile magnetic memory coupled with underlying III-V circuitry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108642
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