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  • 1990-1994  (12)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355920
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  • 2
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104706
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  • 4
    Electronic Resource
    Electronic Resource
    Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2954-2956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104733
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  • 5
    Electronic Resource
    Electronic Resource
    Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 475-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the intersubband transitions on pressure in strained In0.15Ga0.85As/GaAs multiple quantum wells has been studied in two samples with well widths of 8 and 15 nm, respectively, with photomodulated transmission spectroscopy by using a diamond anvil cell. The pressure coefficients of the energies for the intersubband transitions were found to depend significantly on the well widths and to be smaller than that of the band gap of constituents in bulk form. These results suggested that the critical thickness for strained In0.15Ga0.85As/GaAs layer should be smaller than 15 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103670
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  • 6
    Electronic Resource
    Electronic Resource
    Valence band offset of GaAs/GaAs0.68P0.32 multiple quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2078-2080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements have been performed under hydrostatic pressure on GaAs/GaAs0.68P0.32 strained multiple quantum well samples grown by gas-source molecular beam epitaxy. The pressure induced crossover of the first confined electron state in the GaAs wells against the conduction band (001) X minima in the GaAs0.68P0.32 barriers has been observed, which allows a direct spectroscopic determination of the valence band offset for the heterostructure. As the result we obtain the unstrained valence band offset as 0.09±0.02 eV, which corresponds to an approximate 77:23 distribution of the energy gap difference in the conduction and valence bands, respectively, for the GaAs/GaAs0.68P0.32 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109484
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  • 7
    Electronic Resource
    Electronic Resource
    In situ determination of phosphorus composition in GaAs1−xPx grown by gas-source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time an in situ determination of phosphorus compositions in a mixed group-V compound, such as GaAs1−xPx, grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction intensity oscillations from As-limited and (As+P)-limited growth are observed on a Ga-rich GaAs surface. The phosphorus composition is therefore deduced from the different growth rates. Viability of this technique is strongly confirmed by the good agreement with the phosphorus compositions determined ex situ by x-ray rocking curve measurements on GaAs/GaAsP strained-layer superlattice structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105601
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  • 8
    Electronic Resource
    Electronic Resource
    Double-disk structure for output coupling in microdisk lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3167-3169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report our experiment on the use of a double-disk structure to couple light output from a microdisk laser which allows us to maintain a high Q value of the microdisk resonator. The small photon leakage rate from the lower lasing disk to the top waveguiding disk can be carefully controlled by choosing the distance between the two disks. Various structures can be fabricated on the top disk to couple the light out. In this letter, a simple opening in the top disk is used for output coupling. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112470
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  • 9
    Electronic Resource
    Electronic Resource
    InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2001-2003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A linearly graded InxGa1−xP (x=0.48–1) buffer layer is used for growing a high-quality InP layer on a GaAs substrate. We show that an InxGa1−xP buffer layer is superior to an InyGa1−yAs buffer layer because it is transparent to long wavelengths and allows a less stringent composition control. InGaAs/InP single quantum wells and InAsP/InP multiple quantum wells grown on the InP/InxGa1−xP/GaAs substrate show comparable quality to similar structures grown on InP (100) substrates. Photocurrent spectra for the latter exhibit quantum-confined Stark effect near 1.3 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111719
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  • 10
    Electronic Resource
    Electronic Resource
    Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1833-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 A(ring))/InP(150 A(ring)) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the "effective well-width'' model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110806
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