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  • 1990-1994  (7)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Strain compensation by Ge in B-doped silicon epitaxial films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4477-4479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzog et al. [J. Electrochem. Soc. 131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, (approximately-equal-to)2–4 μm thick, beyond which misfit dislocations are generated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352181
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Surface CoSi2 layers by moderate dose cobalt implantation for self-aligned contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1248-1252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 layers produced by implantation of cobalt into silicon at 20 keV with doses 3–6×1016 cm−2 were investigated. Room temperature and 355 °C implants produced continuous layers of silicides with similar electrical properties. The minimum sheet resistivity of annealed samples was 9.2 Ω/sq. and the films were thermally stable up to about 900 °C. Low leakage currents (estimated 〈1×10−14 A(ring) per μm of a typical side-wall spacer length) in a SiO2 film which was similarly implanted with Co demonstrate the usefulness of this method for the formation of thin ((approximately-equal-to)20 nm) cobalt silicides for self-aligned source-drain contacts in shallow junction complimentary metal-oxide-semiconductor technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351297
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Role of surface morphology in wafer bonding (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 257-260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain patterns detected by x-ray topography in wafers bonded for silicon-on-insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal-oxide-semiconductor devices performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347760
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Epi-less bond-and-etch-back silicon-on-insulator by MeV ion implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified approach to silicon-on-insulator (SOI) by bond-and-etch-back technology was studied where a high-energy (MeV) boron implant was utilized as an etch stop to eliminate the need for an epitaxial layer growth in forming a device film. Also a second (retro) MeV implant, applied after the first stage of the etch-back process, was investigated as an improved method for achieving uniform thinning of a thick (3 μm) SOI film. Significantly improved thickness uniformities (σ〈10 nm across a 3×3 in. area) were obtained by this method for a 490-nm-thick silicon device film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104784
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Propagation loss measurements in silicon-on-insulator optical waveguides formed by the bond-and-etchback process (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1667-1669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of loss measurements for guided waves in silicon-on-insulator (SOI) optical waveguides formed by the bond-and-etchback process. Losses as low as 2.6 (2.0) dB/cm were found for the TE0 (TM0) mode for wavelength λ=1.319 μm. Grating coupling into these waveguides is demonstrated and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106262
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  • 6
    Electronic Resource
    Electronic Resource
    Shallow oxygen-related donors in bonded and etchback silicon on insulator structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using electron paramagnetic resonance we have been able to identify a new oxygen-related donor defect in the Si substrate of bonded and etchback silicon-on-insulator structures. This axially symmetric donor is preferentially aligned along the [100] direction, and resides close to the Si/SiO2 interface. It is tentatively suggested that the donors result from the nonoxidizing anneal received by the wafers during the bonding process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111112
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Very thin CoSi2 films by Co sputtering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, resistivity, and thermal stability of CoSi2 films ranging in thickness from ∼11 to 52 nm were investigated. Both the bulk and the surface components of the resistivity were extracted. The films exhibited good thermal stability. The thermal stability and the silicidation temperature which gave the minimum film sheet resistance were found to increase with the sputtered film thickness. The sheet resistance was independent of the ramp-up rate (3–20 °C/s), prolonged exposure of the Co film to air, and the presence of native oxides on the Si surface prior to Co deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108533
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    Paper (German National Licenses)
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