Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (6)
Source
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion, solubility, and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading-resistance analysis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1345-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion profiles of gold in germanium were measured using the radiotracer as well as the spreading-resistance technique. Diffusion coefficients from both experimental methods show a good agreement and are described by an activation energy of 147±2 kJ mol−1 and a preexponential factor in the range (1–2)×10−6 m2 s−1. The results are interpreted within a generalized dissociative model allowing for interstitial-substitutional exchange with the aid of vacancies or interstitial Au-vacancy pairs. Solubility data taken from the boundary concentration of the penetration profiles reveal nonsignificant differences between the total Au concentration and that of substitutional Au atoms. Basic thermodynamic quantities were calculated from the temperature dependence of the solid solubility using data from the Au-Ge phase diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349591
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Short-time diffusion of zinc in silicon for the study of intrinsic point defects (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3559-3561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental procedure has been developed which permits accurate short-time diffusion anneals for diffusion periods as short as a few seconds. This method is applicable to diffusors which are volatile at the diffusion temperature. It will be illustrated for zinc diffusion into silicon which mainly takes place via the kick-out mechanism. Previous long-time diffusion studies have yielded the product CeqIDI of equilibrium concentration and diffusivity of Si self-interstitials(I) involved in the interstitial-substitutional exchange of Zn. The present short-time diffusion method enables us to determine CeqI and DI separately by comparing measured spreading-resistance profiles with computer simulations based on the kick-out model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106393
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of sulfur-35 into silicon using an elemental vapor source (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of S into Si was investigated by the closed ampoule technique using the radioactive tracer 35S. Erfc-type penetration profiles determined by mechanical sectioning originated from exposure of the samples to evaporated elemental sulfur. Diffusion coefficients in the temperature range 1328–1671 K obey the Arrhenius law with an activation energy of 1.80 eV and a pre-exponential factor of 4.7×10−6 m2 s−1. This high diffusivity can be reconciled with the preferred incorporation of S on lattice sites by invoking substitutional-interstitial exchange. Within this concept the measured long-range transport appears to be controlled by a minority of interstitial S atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109987
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4409-4422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experiment of diffusing Zn into GaAs has been conducted at 900 °C using Zn metal as the source material in a quartz ampoule, with or without As being included. For cases without further including As in the ampoule, the Zn profile is box shaped and the Zn-diffused region contains dislocations and void/Ga-precipitate pairs, with the void to precipitate volume ratio being essentially constant throughout the Zn-diffused region. For cases including As in the ampoule, the Zn profile is of the kink-and-tail type with the Zn-diffused region containing dislocations and void/Ga-precipitate pairs. In the profile tail region, the Ga-precipitate to void volume ratio is substantial, while in the profile kink region of high Zn concentration near the surface only voids are left. The results are interpreted in accordance with Zn and diffusion-ambient-induced Ga-As-Zn ternary alloy system thermal equilibrium requirements in general, and the consequential solid phase composition variations in particular. Without As inclusion in the ampoule, the overall Ga-As material Ga concentration in the Zn-diffused region has exceeded the allowed limit of the GaAs crystal, with the crystal composition at a limit. With the inclusion of As in the ampoule, the GaAs crystal composition in the high Zn concentration region near the surface has reached an allowed As concentration limit, but in the profile tail region the overall Ga-As material Ga concentration has exceeded an allowed limit of the GaAs crystal. This is because the vapor phase Zn and As species constitute two conflicting thermodynamic driving forces for producing GaAs crystals with two opposite and extreme compositions: As for producing As-rich crystals, and Zn for producing Ga-rich materials. The common assumption that the inclusion of As in the diffusion ampoule will ensure the whole GaAs crystal essentially at an As-rich composition does not hold during high-concentration Zn indiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354412
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals (1991)
    Springer
    Applied physics 53 (1991), S. 65-74 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323437
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Volume and grain boundary diffusion of implanted 113Sn in aluminium (1991)
    Springer
    Applied physics 53 (1991), S. 297-302 
    Details
    ISSN: 1432-0630
    Keywords: 66.30Jt ; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Volume and grain boundary diffusion of 113Sn in aluminium was investigated with the radiotracer method. The implantation technique was used for tracer deposition to avoid problems of tracer hold-up caused by the oxide layer always present on aluminium. The diffusion penetration was chosen large enough to permit serial sectioning of samples with the aid of a microtome. The temperature dependence of the volume diffusivity was determined as D(T)=4.54×10−5×exp[−(114.5±1.2)kJmol−1/RT] m 2 s −1. This confirms previous measurements from our group which already showed that Sn is the fastest foreign metal diffusor so far investigated in aluminium. Grain boundary diffusion of 113Sn in Al polycrystals was measured in the type-B kinetic regime. The grain boundary diffusion product P=sδD gb (s=segregation factor, δ=grain boundary width, D gb=grain boundary diffusivity) was found to be strongly affected by the impurity content of aluminium. For Al polycrystals of 99.9992% nominal purity we obtained P 5N(T)=1.08×10−8exp [−(96.9±7.5) kJ mol−1/RT] m3 s−1 and for less pure Al polycrystals of 99.99% nominal purity P 4N(T)=3.0×10−10 exp [−(90.1±4.2) kJ mol−1/RT] m3 s−1 was determined. The grain boundary diffusion product in the purer material is more than one order of magnitude higher than in the less pure material. Very likely this is an effect of co-segregation of non-diffusant impurities into the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357191
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...